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Author: Sadao Adachi
Publisher: IET
ISBN: 9780852965580
Category : Aluminium alloys
Languages : en
Pages : 354
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Book Description
The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.
Author: Sadao Adachi
Publisher: IET
ISBN: 9780852965580
Category : Aluminium alloys
Languages : en
Pages : 354
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Book Description
The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.
Author: Benoit Deveaud
Publisher:
ISBN:
Category :
Languages : en
Pages : 183
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Book Description
ETUDE DE LA PHOTOLUMINESCENCE DE GAAS:CR, GA::(1-X)AL::(X)AS:CR POUR DIFFERENTES COMPOSITIONS CHIMIQUES, LONGUEURS D'ONDES EXCITATRICES, ET SOUS PRESSION. L'UTILISATION D'UN LASER YAG:ND (1,06 MU M) A PERMIS D'OBSERVER LES TRANSITIONS DUES AU CHROME ISOLE, NON COMPLEXE. L'UTILISATION DE LA PRESSION A PERMIS D'OBSERVER LA LUMINESCENCE INTERNE DE CR**(2+). DES CALCULS SUPPOSANT L'EXISTENCE D'UN EFFET JAHN TELLER DANS L'ETAT EXCITE **(5)E COMPRENANT UN TRES FAIBLE EFFET QUADRATIQUE ONT PERMIS DE RETROUVER LA FORME DE BANDE OBSERVEE
Author: Richard Ernest Anderson
Publisher:
ISBN:
Category :
Languages : en
Pages : 163
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Book Description
Low temperature photoluminescence from GaAs(1-x)P(x) crystals implanted with nitrogen and neon has been studied. The implanted nitrogen produced photoluminescence spectra confirming the presence of the nitrogen isoelectronic trap after appropriate annealing. Implanted neon did not produce luminescent centers. Both nitrogen and neon implantations introduced lattice damage which severely degraded photoluminescence efficiencies prior to annealing. High temperature annealing was required to remove the effects of the implantation damage and produce optical activity of the implanted nitrogen atoms. In crystals with compositions in the direct bandgap region, certain implanted nitrogen concentrations produced more efficient luminescence than nonimplanted, N-free crystals. In addition, nitrogen concentrations greater than solid solubility were realized, as determined by the spectral characteristics of the photoluminescence. In crystals with indirect bandgap compositions, luminescence from nitrogen implanted crystals compared favorably in intensity with crystals doped conventionally with nitrogen.
Author: Elizabeth Katherine Riemer
Publisher:
ISBN:
Category : Gallium alloys
Languages : en
Pages : 216
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Book Description
Author: Richard Ernest Anderson
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 306
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Book Description
Author:
Publisher: INSPEC
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 370
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Book Description
Author: I. S. Tarasov
Publisher:
ISBN:
Category :
Languages : en
Pages : 3
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Book Description
Double heterostructures with spontaneously formed periodical (SFP) InGaAsP/GaAs active regions have been grown. The dependence of photoluminescence (PL) and electoluminescence (EL) properties of SFP InGaAsP/GaAs structures on excitation level and temperature have been investigated. From analysis of linear polarization rate spectral dependencies of PL SFP InGaAsP/GaAs structures it have been determined that domains with different solid phase composition have lattice mismatch (delta alpha) value of opposite sign. Threshold current density 50 A/cm2 at 77 K have been obtained in laser structures. Strong saturation of longwavelength emission hand intensity in room temperature PL and EL spectra with the increase of excitation level have been revealed.
Author: G. Martinez
Publisher: Springer Science & Business Media
ISBN: 9401580758
Category : Science
Languages : en
Pages : 327
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Book Description
It is widely recognized that an understanding of the optical pro perties of matter will give a great deal of important information re levant to the fundamental physical properties. This is especially true in semiconductor physics for which, due to the intrinsic low screening of these materials, the optical response is quite rich. Their spectra reflect indeed as well electronic as spin or phonon transitions. This is also in the semiconductor field that artificial structures have been recently developed, showing for the first time specific physical properties related to the low dimentionality of the electronic and vi bronic properties : with this respect the quantum and fractional quan tum Hall effects are among the most well known aspects. The associated reduced screening is also a clear manifestation of these aspects and as such favors new optical properties or at least significantly enhan ces some of them. For all these reasons, it appeared necessary to try to review in a global way what the optical investigation has brought today about the understanding of the physics of semiconductors. This volume collects the papers presented at the NATO Advanced study Inst i tut e on "Optical Properties of Semiconductors" held at the Ettore Majorana Centre, Erice, Sicily on March 9th to 20th, 1992. This school brought together 70 scientists active in research related to optical properties of semiconductors. There were 12 lecturers who pro vided the main contributions .
Author: N. G. Basov
Publisher: Springer Science & Business Media
ISBN: 1461575486
Category : Science
Languages : en
Pages : 189
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Book Description
Author: Johannes Reinhardt Botha
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 438
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Book Description
