Author: Hanjin Cho
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 126
Book Description
The effect of the amorphous and glassy structure of amorphous germanium films on their electrical characteristics was investigated experimentally. The films were deposited onto silicon substrates using a modified MRC 8800 triode sputtering system. The Poole-Frenkel and Schottky mechanisms are discussed in detail and the shortcomings of the accepted picture of the former in amorphous materials are dealt with. It was concluded on the basis available evidence that the current flow in amorphous germanium favors the Poole-Frenkel mechanism at high fields. Amorphous hydrogenated germanium films which were deposited by bias sputtering were characterized by measuring the infrared absorption. The films have absorption peaks, as expected, at 1950 cḿ1 and at 570 cḿ1 due to GeH2 bonding and at 1880 cḿ1 due to GeH2 bonding. A method was described for determining the optical constants of a thin film deposited on a nonabsorbing window using a single set of transmittances over an absorption band. The method depends on the fact that the phase shift of the transmitted radiation can be determined from the transmittance by a Kramers-Kronig transform. The transmittance data of a-Ge:H and sputtered silicon nitride films were used to calculate their optical constants by this method. In a-Ge:H films, the value of the calculated refractive index in the k=0 region was not reasonable. However, for Si3N4 films, the calculated absorption coefficient was consistent with the experimental results.
Properties of Sputtered A-Ge and A-Ge:H Thin Films
Author: Hanjin Cho
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 126
Book Description
The effect of the amorphous and glassy structure of amorphous germanium films on their electrical characteristics was investigated experimentally. The films were deposited onto silicon substrates using a modified MRC 8800 triode sputtering system. The Poole-Frenkel and Schottky mechanisms are discussed in detail and the shortcomings of the accepted picture of the former in amorphous materials are dealt with. It was concluded on the basis available evidence that the current flow in amorphous germanium favors the Poole-Frenkel mechanism at high fields. Amorphous hydrogenated germanium films which were deposited by bias sputtering were characterized by measuring the infrared absorption. The films have absorption peaks, as expected, at 1950 cḿ1 and at 570 cḿ1 due to GeH2 bonding and at 1880 cḿ1 due to GeH2 bonding. A method was described for determining the optical constants of a thin film deposited on a nonabsorbing window using a single set of transmittances over an absorption band. The method depends on the fact that the phase shift of the transmitted radiation can be determined from the transmittance by a Kramers-Kronig transform. The transmittance data of a-Ge:H and sputtered silicon nitride films were used to calculate their optical constants by this method. In a-Ge:H films, the value of the calculated refractive index in the k=0 region was not reasonable. However, for Si3N4 films, the calculated absorption coefficient was consistent with the experimental results.
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 126
Book Description
The effect of the amorphous and glassy structure of amorphous germanium films on their electrical characteristics was investigated experimentally. The films were deposited onto silicon substrates using a modified MRC 8800 triode sputtering system. The Poole-Frenkel and Schottky mechanisms are discussed in detail and the shortcomings of the accepted picture of the former in amorphous materials are dealt with. It was concluded on the basis available evidence that the current flow in amorphous germanium favors the Poole-Frenkel mechanism at high fields. Amorphous hydrogenated germanium films which were deposited by bias sputtering were characterized by measuring the infrared absorption. The films have absorption peaks, as expected, at 1950 cḿ1 and at 570 cḿ1 due to GeH2 bonding and at 1880 cḿ1 due to GeH2 bonding. A method was described for determining the optical constants of a thin film deposited on a nonabsorbing window using a single set of transmittances over an absorption band. The method depends on the fact that the phase shift of the transmitted radiation can be determined from the transmittance by a Kramers-Kronig transform. The transmittance data of a-Ge:H and sputtered silicon nitride films were used to calculate their optical constants by this method. In a-Ge:H films, the value of the calculated refractive index in the k=0 region was not reasonable. However, for Si3N4 films, the calculated absorption coefficient was consistent with the experimental results.
Sputtered Thin Films
Author: Frederick Madaraka Mwema
Publisher: Engineering Materials
ISBN: 9780367513603
Category : Coatings
Languages : en
Pages : 0
Book Description
This book provides an overview of sputtered thin films and demystifies the concept of fractal theory in analysis of sputtered thin films. It simplifies the use of fractal tools in studying the growth and properties of thin films during sputtering processes.
Publisher: Engineering Materials
ISBN: 9780367513603
Category : Coatings
Languages : en
Pages : 0
Book Description
This book provides an overview of sputtered thin films and demystifies the concept of fractal theory in analysis of sputtered thin films. It simplifies the use of fractal tools in studying the growth and properties of thin films during sputtering processes.
Electronic Properties of Sputtered Ta-Cu Thin Films
Author: Kevin D. Aylesworth
Publisher:
ISBN:
Category :
Languages : en
Pages : 216
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 216
Book Description
Plasma Deposited Thin Films
Author: Mort
Publisher: CRC Press
ISBN: 1351084267
Category : Technology & Engineering
Languages : en
Pages : 253
Book Description
In Summary, the objective of this book is to present in one volume a review of the plasma deposition process and the present understanding of the most important and widely used plasma deposited thin film materials, devices and their applications.
Publisher: CRC Press
ISBN: 1351084267
Category : Technology & Engineering
Languages : en
Pages : 253
Book Description
In Summary, the objective of this book is to present in one volume a review of the plasma deposition process and the present understanding of the most important and widely used plasma deposited thin film materials, devices and their applications.
Nuclear Science Abstracts
Author:
Publisher:
ISBN:
Category : Nuclear energy
Languages : en
Pages : 1052
Book Description
Publisher:
ISBN:
Category : Nuclear energy
Languages : en
Pages : 1052
Book Description
Investigation of the DC Electrical Properties of Sputtered GaAs Thin Films
Author: Dan Michael Mosher
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 36
Book Description
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 36
Book Description
Nuclear Power Reactor Instrumentation Systems Handbook
Author: Joseph M. Harrer
Publisher:
ISBN: 9780870790058
Category : Technology & Engineering
Languages : en
Pages : 1052
Book Description
Publisher:
ISBN: 9780870790058
Category : Technology & Engineering
Languages : en
Pages : 1052
Book Description
Optical Properties of Amorphous As-Se and Ge-As-Se Thin Films
Author: L. Tichý
Publisher:
ISBN:
Category :
Languages : en
Pages : 7
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 7
Book Description
Stucture and Properties of Sputter Deposited Y-Ba-Cu-O Thin Films
Author: Kenneth Philip Mingard
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Structure and Properties of Sputter Deposited Y-Ba-Cu-O Thin Films
Author: Kenneth Philip Mingard
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 272
Book Description
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 272
Book Description