Proceedings of the Third International Symposium on Defects in Silicon PDF Download
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Author: Takao Abe
Publisher: The Electrochemical Society
ISBN: 9781566772235
Category : Science
Languages : en
Pages : 548
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Author: Takao Abe
Publisher: The Electrochemical Society
ISBN: 9781566772235
Category : Science
Languages : en
Pages : 548
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Book Description
Author: Peter J. Hesketh
Publisher: The Electrochemical Society
ISBN: 9781566771320
Category : Science
Languages : en
Pages : 234
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Author: John P. Dismukes
Publisher: The Electrochemical Society
ISBN: 9781566770606
Category : Nature
Languages : en
Pages : 1126
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Author: C. E. Hunt
Publisher:
ISBN: 9781566771016
Category : Technology & Engineering
Languages : en
Pages : 628
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Author: Robert B. Comizzoli
Publisher: The Electrochemical Society
ISBN: 9781566770880
Category : Science
Languages : en
Pages : 436
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Author: Niroj Maharjan
Publisher: Springer Nature
ISBN: 9819986435
Category :
Languages : en
Pages : 418
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Author: G. R. Srinivasan
Publisher: The Electrochemical Society
ISBN: 9781566771542
Category : Science
Languages : en
Pages : 546
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Author: ConferenceSeries
Publisher: ConferenceSeries
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 88
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September 10-11, 2018 London, UK Key Topics : Lithium Batteries, Fuel Cell Technologies, Applications of Fuel Cells, Electric Vehicles, Hydrogen energy, Super Capacitors, Advanced Energy Materials, Materials Science, Battery Management System,
Author: Hisham Z. Massoud
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 804
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Author: Robert D. Larrabee
Publisher: Springer Science & Business Media
ISBN: 1461326958
Category : Technology & Engineering
Languages : en
Pages : 337
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viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
