Author: Gijs Bosman
Publisher: World Scientific
ISBN: 9812811168
Category : Electronic noise
Languages : en
Pages : 850
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Book Description
The International Conference on Noise in Physical Systems and 1/f Fluctuations brings together physicists and engineers interested in all aspects of noise and fluctuations in materials, devices, circuits, and physical and biological systems. The experimental research on novel devices and systems and the theoretical studies included in this volume provide the reader with a comprehensive, in-depth treatment of present noise research activities worldwide. Contents: Noise in Nanoscale Devices (S Bandyopadhyay et al.); 1/f Voltage Noise Induced by Magnetic Flux Flow in Granular Superconductors (O V Gerashchenko); Low Frequency Noise Analysis of Different Types of Polysilicon Resistors (A Penarier et al.); Low Frequency Noise in CMOS Transistors: An Experimental and Comparative Study on Different Technologies (P Fantini et al.); Modeling of Current Transport and 1/f Noise in GaN Based HBTs (H Unlu); Low Frequency Noise in CdSe Thin Film Transistors (M J Deen & S Rumyanstsev); NIST Program on Relative Intensity Noise Standards for Optical Fiber Sources Near 1550 nm (G Obarski); Physical Model of the Current Noise Spectral Density Versus Dark Current in CdTe Detectors (A Imad et al.); Time and Frequency Study of RTS in Bipolar Transistors (A Penarier et al.); Neural Network Based Adaptive Processing of Electrogastrogram (S Selvan); Shot Noise as a Test of Entanglement and Nonlocality of Electrons in Mesoscopic Systems (E V Sukhorukov et al.); The Readout of Time, Continued Fractions and 1/f Noise (M Planat & J Cresson); Longitudinal and Transverse Noise of Hot Electrons in 2DEG Channels (J Liberis et al.); 1/f Noise, Intermittency and Clustering Poisson Process (F Gruneis); Noise Modeling for PDE Based Device Simulations (F Bonani & G Ghione); Methods of Slope Estimation of Noise Power Spectral Density (J Smulko); and other papers. Readership: Researchers, academics and graduate students in electrical and electronic engineering, biophysics, nanoscience, applied physics, statistical physics and semiconductor science.
Author: Gijs Bosman
Publisher: World Scientific
ISBN: 9814490695
Category : Technology & Engineering
Languages : en
Pages : 850
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Book Description
The International Conference on Noise in Physical Systems and 1/f Fluctuations brings together physicists and engineers interested in all aspects of noise and fluctuations in materials, devices, circuits, and physical and biological systems. The experimental research on novel devices and systems and the theoretical studies included in this volume provide the reader with a comprehensive, in-depth treatment of present noise research activities worldwide.
Author: Vytautas Bareikis
Publisher: World Scientific
ISBN: 9814549177
Category :
Languages : en
Pages : 770
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Book Description
The volume constitutes the proceedings of the 13th International Conference on Noise in Physical Systems and 1/f Fluctuations (ICNF'95) held in Palanga, Lithuania, in the period 29 May - 3 June 1995.International conference of fluctuation phenomena has a rich history. Previous ones were held in St. Louis (USA, 1993), Kyoto (Japan, 1991), Budapest (Hungary, 1989), Montreal (Canada, 1983), etc. The conference proved to be successful in bringing together specialists in fluctuation phenomena in very different areas, and providing a bridge linking theorists and applied scientists involved in the design of new generation of electronic devices. Correspondingly, the volume covers fundamental aspects of noise in various fields of science and modern technology. Mesoscopic fluctuations, noise in high temperature superconductors, in nanoscale structures, in optoelectronic and microwave devices, fluctuation phenomena in biological systems and human body are in the spotlight.
Author: C Claeys
Publisher: World Scientific
ISBN: 9814546143
Category :
Languages : en
Pages : 702
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Book Description
The recent conferences in this series were organised in Montreal (1987), Budapest (1989), Kyoto (1991), St Louis (1993) and Palanga (1995). The aim of the conference was to bring together specialists in fluctuation phenomena from different fields and to make a bridge between theoretical scientists and more applied or engineering oriented researchers. Therefore a broad variety of topics covering the fundamental aspects of noise and fluctuations as well as applications in various fields are addressed. Noise in materials, components, circuits and electronic, biological and other physical systems are discussed.
Author: Hans Hartnagel
Publisher: John Wiley & Sons
ISBN: 9780471384328
Category : Technology & Engineering
Languages : en
Pages : 316
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Book Description
A thorough reference work bridging the gap between contemporary and traditional approaches to noise problems Noise in semiconductor devices refers to any unwanted signal or disturbance in the device that degrades performance. In semiconductor devices, noise is attributed to hot-electron effects. Current advances in information technology have led to the development of ultrafast devices that are required to provide low-noise, high-speed performance. Microwave Noise in Semiconductor Devices considers available data on the speed versus noise trade-off and discusses optimal solutions in semiconductors and semiconductor structures. These solutions are of direct interest in the research and development for fast, efficient, and reliable communications systems. As the only book of its kind accessible to practicing engineers, the material is divided into four parts-the kinetic theory of fluctuations and its corollaries, the methods of measurements of microwave noise, low-dimensional structures, and, finally, devices. With over 100 illustrations presenting recent experimental data for up-to-date semiconductor structures designed for ultrafast electronics, together with results of microscopic simulation where available, these examples, tables, and references offer a full comprehension of electronic processes and fluctuation in dimensionally quantizing structures. Bridging the apparent gap between the microscopic approach and the equivalent circuit approach, Microwave Noise in Semiconductor Devices considers microwave fluctuation phenomena and noise in terms of ultrafast kinetic processes specific to modern quantum-well structures. Scientists in materials science, semiconductor and solid-state physics, electronic engineers, and graduate students will all appreciate this indispensable review of contemporary and future microwave and high-speed electronics.
Author: M. Jamal Deen
Publisher: World Scientific
ISBN: 9789810249052
Category : Science
Languages : en
Pages : 426
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Book Description
CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.
Author: Susumu Namba
Publisher: Springer Science & Business Media
ISBN: 4431669221
Category : Science
Languages : en
Pages : 477
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Book Description
The International Symposium on the Science and Technology of Mesoscopic Structures was held at Shin-Kohkaido in Nara from November 6-8, 1991. The symposium was sponsored by the International Institute for Advanced Study and partly by Nara Prefecture, Nara City, Nara Convention Bureau, and the Ministry of Education, Science and Culture of Japan, as well as industrial organizations. We would like to acknowledge the support of the symposium by these or ganizations. The scope of the symposium was planned by the organizing committee to cover outstanding contributors in the fields of (1) ballistic transport, (2) electron wave guides and interference effects, (3) quantum confinement effects, (4) tunneling phenomena, (5) optical nonlinearity, and (6) fabrication technology of meso scopic structures. Twenty-six invited speakers were selected from the United States, Europe, and Japan. In addition twenty-four contributed papers were accepted for presentation at the poster session. These papers are included in the proceedings. We are grateful to the organizing committee, Ms. Y oshiko Kusaki of the Inter national Institute for Advanced Study for the secretarial service, and Dr. Nobuya Mori, Osaka University, for his scientific cooperation. Thanks are also due to the authors and the participants for their contributions to a successful symposium.
Author:
Publisher: Academic Press
ISBN: 0080577652
Category : Technology & Engineering
Languages : en
Pages : 353
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Book Description
Advances in Imaging & Electron Physics merges two long-running serials--Advances in Electronics & Electron Physics and Advances in Optical & Electron Microscopy. The series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science and digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains.
Author: Tapan K. Gupta
Publisher: Springer Science & Business Media
ISBN: 3642340768
Category : Medical
Languages : en
Pages : 529
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Book Description
This book will serve as the definitive source of detailed information on radiation, ionization, and detection in nuclear medicine. It opens by considering fundamental aspects of nuclear radiation, including dose and energy, sources, and shielding. Subsequent chapters cover the full range of relevant topics, including the detection and measurement of radiation exposure (with detailed information on mathematical modelling); medical imaging; the different types of radiation detector and their working principles; basic principles of and experimental techniques for deposition of scintillating materials; device fabrication; the optical and electrical behaviors of radiation detectors; and the instrumentation used in nuclear medicine and its application. The book will be an invaluable source of information for academia, industry, practitioners, and researchers.
Author: Robert F Davis
Publisher: World Scientific
ISBN: 9814482692
Category : Technology & Engineering
Languages : en
Pages : 295
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Book Description
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
