Proceedings of the First International Symposium on Silicon Molecular Beam Epitaxy, Held May 14-17, 1985, Toronto, Ohio PDF Download
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Author: International Symposium on Silicon Molecular Beam Epitaxy. 1, 1985, Toronto
Publisher:
ISBN:
Category :
Languages : en
Pages : 455
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Book Description
Author: International Symposium on Silicon Molecular Beam Epitaxy. 1, 1985, Toronto
Publisher:
ISBN:
Category :
Languages : en
Pages : 455
Get Book Here
Book Description
Author: John Condon Bean
Publisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages : 478
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Book Description
Author: International Symposium on Silicon Molecular Beam
Publisher:
ISBN: 9780608057255
Category :
Languages : en
Pages : 465
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Book Description
Author: John C. Bean
Publisher:
ISBN:
Category :
Languages : en
Pages : 455
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Book Description
Author: John Condon Bean
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 682
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Book Description
Author: Erich Kasper
Publisher: North Holland
ISBN:
Category : Science
Languages : en
Pages : 484
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Book Description
This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy. A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: John Condon Bean
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 682
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Book Description
Featuring papers from the 1991 MRS Spring Meeting (April 29 - May 3, Anaheim, California), this volume contains 93 papers presenting research in Si MBE, including a key paper from the special Late News session on light from porous silicon. Topics covered include: homoepitaxy and substrate preparation; doping; GeSi growth; GeSi optical properties; GeSi electronic transport; device applications; epitaxial metals and insulators; novel materials and growth techniques.
Author: L.L. Chang
Publisher: Springer Science & Business Media
ISBN: 940095073X
Category : Technology & Engineering
Languages : en
Pages : 718
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Book Description
The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova tions. The emergence of a process, on the other hand, invariably creates opportunities for device improvement and invention. This intimate relationship between the two has most recently been witnessed in MBE and heterostructures, the subject of this Institute. This volume is divided into several sections. Chapter 1 serves as an introduction by providing a perspective of the subject. This is followed by two sections, each containing four chapters, Chapters 2-5 addressing the principles of the MBE process and Chapters 6-9 describ ing its use in the growth of a variety of semiconductors and heteros tructures. The next two sections, Chapters to-II and Chapters 12-15, treat the theory and the electronic properties of the heterostructures, respectively. The focus is on energy quantization of the two dimensional electron system. Chapters 16-17 are devoted to device structures, including both field-effect transistors and lasers and detec tors.
Author: G.M. Minchev
Publisher: Trans Tech Publications Ltd
ISBN: 3035704562
Category : Technology & Engineering
Languages : en
Pages : 210
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Book Description
Materials Science Forum Vol. 69
