Author:
Publisher:
ISBN: 9784886860606
Category : Integrated circuits
Languages : en
Pages : 514
Book Description
ISPSD'04
Author:
Publisher:
ISBN: 9784886860606
Category : Integrated circuits
Languages : en
Pages : 514
Book Description
Publisher:
ISBN: 9784886860606
Category : Integrated circuits
Languages : en
Pages : 514
Book Description
Proceedings of the Fourth International Symposium on High Purity Silicon
Author: Cor L. Claeys
Publisher: The Electrochemical Society
ISBN: 9781566771566
Category : Science
Languages : en
Pages : 606
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566771566
Category : Science
Languages : en
Pages : 606
Book Description
Analytical and Diagnostic Techniques for Semiconductor Materials, Devices and Processes
Author: Bernd O. Kolbesen (Chemiker.)
Publisher: The Electrochemical Society
ISBN: 9781566772396
Category : Technology & Engineering
Languages : en
Pages : 568
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566772396
Category : Technology & Engineering
Languages : en
Pages : 568
Book Description
Reliability of High Temperature Electronics
Author: A. Christou
Publisher: RIAC
ISBN: 096526694X
Category : Technology & Engineering
Languages : en
Pages : 392
Book Description
Publisher: RIAC
ISBN: 096526694X
Category : Technology & Engineering
Languages : en
Pages : 392
Book Description
Investigation of Reliability Aspects of Power Semiconductors in Photovoltaic Central Inverters for Sunbelt Regions
Author: Christian Felgemacher
Publisher: kassel university press GmbH
ISBN: 3737604940
Category :
Languages : en
Pages : 186
Book Description
High reliability and system lifetimes in the range of 30 years are essential for renewable energy systems such as photovoltaic power plants to minimise costs for the generated electric energy. At the same time such systems are used in regions with high solar irradiance and also harsh environmental conditions. Therefore, designs for photovoltaic inverters need to meet not only the key design criteria of high conversion efficiency but also need to be very robust and at the same time meet challenging cost targets. In this dissertation aspects concerning the lifetime and reliability of power semiconductors in photovoltaic central inverters are investigated. On key topic of the dissertation is the measurement of the voltage dependent failure rate due to cosmic radiation induced single-event-burnout of SiC and Si power semiconductors. The second topic is the development of a system level simulation to quantify the stress on the power semiconductors in a PV central inverters in various regions of the world. Further topics are the investigation of improved control concepts for the cooling system of PV central inverters and the monitoring of IGBT temperatures during converter operation.
Publisher: kassel university press GmbH
ISBN: 3737604940
Category :
Languages : en
Pages : 186
Book Description
High reliability and system lifetimes in the range of 30 years are essential for renewable energy systems such as photovoltaic power plants to minimise costs for the generated electric energy. At the same time such systems are used in regions with high solar irradiance and also harsh environmental conditions. Therefore, designs for photovoltaic inverters need to meet not only the key design criteria of high conversion efficiency but also need to be very robust and at the same time meet challenging cost targets. In this dissertation aspects concerning the lifetime and reliability of power semiconductors in photovoltaic central inverters are investigated. On key topic of the dissertation is the measurement of the voltage dependent failure rate due to cosmic radiation induced single-event-burnout of SiC and Si power semiconductors. The second topic is the development of a system level simulation to quantify the stress on the power semiconductors in a PV central inverters in various regions of the world. Further topics are the investigation of improved control concepts for the cooling system of PV central inverters and the monitoring of IGBT temperatures during converter operation.
Design, Control, and Application of Modular Multilevel Converters for HVDC Transmission Systems
Author: Kamran Sharifabadi
Publisher: John Wiley & Sons
ISBN: 1118851560
Category : Science
Languages : en
Pages : 414
Book Description
Design, Control and Application of Modular Multilevel Converters for HVDC Transmission Systems is a comprehensive guide to semiconductor technologies applicable for MMC design, component sizing control, modulation, and application of the MMC technology for HVDC transmission. Separated into three distinct parts, the first offers an overview of MMC technology, including information on converter component sizing, Control and Communication, Protection and Fault Management, and Generic Modelling and Simulation. The second covers the applications of MMC in offshore WPP, including planning, technical and economic requirements and optimization options, fault management, dynamic and transient stability. Finally, the third chapter explores the applications of MMC in HVDC transmission and Multi Terminal configurations, including Supergrids. Key features: Unique coverage of the offshore application and optimization of MMC-HVDC schemes for the export of offshore wind energy to the mainland. Comprehensive explanation of MMC application in HVDC and MTDC transmission technology. Detailed description of MMC components, control and modulation, different modeling approaches, converter dynamics under steady-state and fault contingencies including application and housing of MMC in HVDC schemes for onshore and offshore. Analysis of DC fault detection and protection technologies, system studies required for the integration of HVDC terminals to offshore wind power plants, and commissioning procedures for onshore and offshore HVDC terminals. A set of self-explanatory simulation models for HVDC test cases is available to download from the companion website. This book provides essential reading for graduate students and researchers, as well as field engineers and professionals who require an in-depth understanding of MMC technology.
Publisher: John Wiley & Sons
ISBN: 1118851560
Category : Science
Languages : en
Pages : 414
Book Description
Design, Control and Application of Modular Multilevel Converters for HVDC Transmission Systems is a comprehensive guide to semiconductor technologies applicable for MMC design, component sizing control, modulation, and application of the MMC technology for HVDC transmission. Separated into three distinct parts, the first offers an overview of MMC technology, including information on converter component sizing, Control and Communication, Protection and Fault Management, and Generic Modelling and Simulation. The second covers the applications of MMC in offshore WPP, including planning, technical and economic requirements and optimization options, fault management, dynamic and transient stability. Finally, the third chapter explores the applications of MMC in HVDC transmission and Multi Terminal configurations, including Supergrids. Key features: Unique coverage of the offshore application and optimization of MMC-HVDC schemes for the export of offshore wind energy to the mainland. Comprehensive explanation of MMC application in HVDC and MTDC transmission technology. Detailed description of MMC components, control and modulation, different modeling approaches, converter dynamics under steady-state and fault contingencies including application and housing of MMC in HVDC schemes for onshore and offshore. Analysis of DC fault detection and protection technologies, system studies required for the integration of HVDC terminals to offshore wind power plants, and commissioning procedures for onshore and offshore HVDC terminals. A set of self-explanatory simulation models for HVDC test cases is available to download from the companion website. This book provides essential reading for graduate students and researchers, as well as field engineers and professionals who require an in-depth understanding of MMC technology.
Short Circuit Requirements of Power Converters based upon Wide-Bandgap Semiconductors
Author: Douglas Pappis
Publisher: BoD – Books on Demand
ISBN: 3737609772
Category : Technology & Engineering
Languages : en
Pages : 270
Book Description
In power electronics designs, the evaluation and prediction of potential fault conditions on semiconductors is essential for achieving safe operation and reliability, being short circuit (SC) one of the most probable and destructive failures. Recent improvements on Wide-Bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium nitrite (GaN) enable power electronic designs with outstanding performance, reshaping the power electronics landscape. In comparison to Silicon (Si), SiC and GaN power semiconductors physically present smaller chip areas, higher maximum internal electric fields, and higher current densities. Such characteristics yield a much faster rise of the devices’ internal temperatures, worsening their SC performance. In this way, this dissertation consists of a comprehensive investigation about SC on SiC MOSFETs, GaN HEMT, and GaN E-HEMT transistors, as well as contextualizing their particularities on SC performance by comparison with that of Si IBGTs. Moreover, an investigation towards how to prevent SC occurrences besides a review of available SC protection methods is presented.
Publisher: BoD – Books on Demand
ISBN: 3737609772
Category : Technology & Engineering
Languages : en
Pages : 270
Book Description
In power electronics designs, the evaluation and prediction of potential fault conditions on semiconductors is essential for achieving safe operation and reliability, being short circuit (SC) one of the most probable and destructive failures. Recent improvements on Wide-Bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium nitrite (GaN) enable power electronic designs with outstanding performance, reshaping the power electronics landscape. In comparison to Silicon (Si), SiC and GaN power semiconductors physically present smaller chip areas, higher maximum internal electric fields, and higher current densities. Such characteristics yield a much faster rise of the devices’ internal temperatures, worsening their SC performance. In this way, this dissertation consists of a comprehensive investigation about SC on SiC MOSFETs, GaN HEMT, and GaN E-HEMT transistors, as well as contextualizing their particularities on SC performance by comparison with that of Si IBGTs. Moreover, an investigation towards how to prevent SC occurrences besides a review of available SC protection methods is presented.
Electrical & Electronics Abstracts
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1860
Book Description
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1860
Book Description
The Proceedings of the 17th Annual Conference of China Electrotechnical Society
Author: Qingxin Yang
Publisher: Springer Nature
ISBN: 9819903572
Category : Technology & Engineering
Languages : en
Pages : 1408
Book Description
This book gathers outstanding papers presented at the 17th Annual Conference of China Electrotechnical Society, organized by China Electrotechnical Society (CES), held in Beijing, China, from September 17 to 18, 2022. It covers topics such as electrical technology, power systems, electromagnetic emission technology, and electrical equipment. It introduces the innovative solutions that combine ideas from multiple disciplines. The book is very much helpful and useful for the researchers, engineers, practitioners, research students, and interested readers.
Publisher: Springer Nature
ISBN: 9819903572
Category : Technology & Engineering
Languages : en
Pages : 1408
Book Description
This book gathers outstanding papers presented at the 17th Annual Conference of China Electrotechnical Society, organized by China Electrotechnical Society (CES), held in Beijing, China, from September 17 to 18, 2022. It covers topics such as electrical technology, power systems, electromagnetic emission technology, and electrical equipment. It introduces the innovative solutions that combine ideas from multiple disciplines. The book is very much helpful and useful for the researchers, engineers, practitioners, research students, and interested readers.
Insulated Gate Bipolar Transistor IGBT Theory and Design
Author: Vinod Kumar Khanna
Publisher: John Wiley & Sons
ISBN: 047166099X
Category : Technology & Engineering
Languages : en
Pages : 648
Book Description
A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.
Publisher: John Wiley & Sons
ISBN: 047166099X
Category : Technology & Engineering
Languages : en
Pages : 648
Book Description
A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.