Proceedings of the 16th International Conference on Defects in Semiconductors : ICDS 16 ; Lehigh University, Bethlehem, Pennsylvania, 22 - 26 July 1991. 2 (1992) PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Proceedings of the 16th International Conference on Defects in Semiconductors : ICDS 16 ; Lehigh University, Bethlehem, Pennsylvania, 22 - 26 July 1991. 2 (1992) PDF full book. Access full book title Proceedings of the 16th International Conference on Defects in Semiconductors : ICDS 16 ; Lehigh University, Bethlehem, Pennsylvania, 22 - 26 July 1991. 2 (1992) by International Conference on Defects in Semiconductors (16, 1991, Bethlehem, Pa.). Download full books in PDF and EPUB format.
Author: International Conference on Defects in Semiconductors (16, 1991, Bethlehem, Pa.)
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
Author: International Conference on Defects in Semiconductors (16, 1991, Bethlehem, Pa.)
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
Author: Gordon Davies
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 1604
Get Book Here
Book Description
Author: Gordon Davies
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 572
Get Book Here
Book Description
Author: Gordon Davies
Publisher: Trans Tech Publications Ltd
ISBN: 3035704600
Category : Technology & Engineering
Languages : en
Pages : 1634
Get Book Here
Book Description
Part 1. 1. Hydrogen in Elemental Hosts . 2. Transition Metal Impurities in Elemental Hosts . 3. Impurities in Elemental Hosts . 4. Irradiation Defects in Elemental Hosts . 5. Oxygen in GaAs, Si and Ge . 6. Theory . Part 2 . 7. Hydrogen in Compound Semiconductors . 8. Rare Earth Impurities in Silicon and Compound Semiconductors . 9. Transition Metal Impurities in Compound Semiconductors . 10. Donors in Compound Semiconductors . 11. EL2 And Anti-Site Related Defects . 12. Other Defects in III-V Semiconductors . 13. Growth Defects . Part 3 . 14. New Techniques . 15. Defects in SiC and Diamond . 16. Defects in II-VI Semiconductors . 17. Hetero-Epitaxy and Strained Layers . 18. Dislocations . 19. Superlattices . 20. Defects at Surfaces and Interfaces and in Low-Dimensional Structures . 21. Processing-Induced Defects . 22. Effects of Defects on Devices .
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 16
Get Book Here
Book Description
Author: International Conference on Defects in Semiconductors
Publisher:
ISBN: 9780878496280
Category :
Languages : en
Pages :
Get Book Here
Book Description
Author: International Conference on Defects in Semiconductors
Publisher:
ISBN:
Category :
Languages : en
Pages : 399
Get Book Here
Book Description
Author: Gordon Davies
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 540
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 525
Get Book Here
Book Description
Partial contents include: (1) Atomic defect configuration identified by nuclear techniques; (2) Combination of deep level transient spectroscopy; (3) Microscopy of Frenkel pairs in semiconductors by nuclear techniques; (4) Muon stopping sites in semiconductors from decay positron channeling; (5) Polarized spectroscopy of complex luminescence centers; (6) A re-evaluation of electric field enhanced emission measurements for use in type and charge state determination; (7) X ray spectroscopy following neutron irradiation of semi- conductor silicon; (8) Transition metals in silicon carbide (SiC) : vanadium and titanium; (9) Photoluminescence excitation spectroscopy of cubic SiC grown by chemical vapor deposition on Si substrates; (10) Luminescence and absorption of vanadium in 6H SiC; (11) Impurity defect reactions in ion implanted diamond; (12) Electron trapping defects in MBE-grown relaxed n-In0.05- Ga0.95 As on gallium arsenide; (13) Scanning tunneling microscopy studies of semiconductor surface defects; (14) Photoluminescence characterisation of the silicon surface exposed to plasma treatment; (15) An analysis of point defect fluxes during silicon dioxide precipitation in silicon; (16) Electrical properties of oxidation-induced stacking faults in n-type silicon; (17) Morphology change of oxygen precipitates in CZ-Si wafers during two-step heat-treatment; (18) Ion implantation induced sheet stress due to defects in thin (100) silicon films; and (19) Hydrogen induced defects and defect passivation in silicon solar cells.
Author: Gordon Davies
Publisher:
ISBN:
Category :
Languages : en
Pages : 648
Get Book Here
Book Description
Partial contents include: (1) Hydrogen-dopant interactions in III-V semiconductors; (2) Interaction of hydrogen with impurities in semiconductors; (3) Carbon/hydrogen interaction in III-V compounds; (4) Quantum motion of muonium in gallium arsenides and copper chloride; (5) Acceptor passivation in GaP by positively charged hydrogen manifested by donor acceptor pair luminescence; (6) Local mode spectroscopy of OH and NH complexes in semi-insulating GaAs; (7) Effects of reverse bias annealing and zero bias annealing on Ti/n-GaAs and Au/n-GaAs schottky barriers containing hydrogen; (8) Equilibrium sites and relative stability of atomic and molecular hydrogen in GaAs; (9) Electrical properties of ytterbium erbium doped indium phosphides; (10) Vibrational mode Fourier transform spectroscopy with a diamond anvil cell; (11) A photoluminescence study of the charge states of a donor level in GaAs induced by hydrostatic pressure; (12) On the kinetics of photoconductivity in Al(x)Ga(1-x)As:Si; (13) Studies of deep level transient spectroscopy of DX centers of GaAlAs:Te under uniaxial stress; (14) Point defects and their reactions in semi-insulating GaAs after low temperature e( - ) irradiation; (15) Photoluminescence; (16) Positron annihilation in electron irradiated gallium arsenide; (17) Low temperature GaAs: electrical and optical properties; (18) Electron paramagnetic resonance studies of low temperature molecular beam epitaxial GaAs layers; and (19) Oxygen behavior during silicon epitaxial growth : recent advances.
