Author: Juin J. Liou
Publisher: Artech House Publishers
ISBN:
Category : Science
Languages : en
Pages : 248
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Book Description
The first book devoted entirely to HBTs, this reference examines the basic concept, standard and advanced structures, noise performance, reliability issues, and simulation. It's main emphasis is on device physics and its mathematical representations, through which the operational characterization of AlGaAs/GaAs HBTs can be understood. It enables device engineers, device researchers, and circuit designers to increase their knowledge of HBT principles and behavior with significantly less literature research time, and to design optimal HBTs with minimal design time. Extensively referenced, with 150 illustrations and 250 equations.
Author: Chun-ta Huang
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 152
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Book Description
Author: Tony Kam-Ming Ma
Publisher:
ISBN:
Category :
Languages : en
Pages : 250
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Book Description
Author: M F Chang
Publisher: World Scientific
ISBN: 9814501069
Category : Technology & Engineering
Languages : en
Pages : 437
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Book Description
Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Author: Yang Zhao
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 0
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Book Description
Author: Jiann S. Yuan
Publisher: Wiley-Interscience
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 496
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Book Description
An up-to-date, comprehensive guide to heterojunction bipolar transistor technology. Owing to their superior performance in microwave and millimeter-wave applications, heterojunction bipolar transistors (HBTs) have become a major force in mobile and wireless communications. This book offers an integrated treatment of SiGe, GaAs, and InP HBTs, presenting a much-needed overview of HBTs based on different materials systems-their fabrication, analysis, and testing procedures. Highly respected expert Jiann S. Yuan discusses in depth the dc and RF performance and modeling of HBT devices, including simulation, thermal instability, reliability, low-temperature and high-temperature performance, and HBT analog and digital circuits. He provides step-by-step presentations of HBT materials-including Si HBTs and III-V and IV-IV compound HBTs, which are rarely described in the literature. Also covered are device and circuit interaction as well as specific high-speed devices in mobile and wireless communications. This immensely useful guide to a rapidly expanding field includes more than 200 figures, tables of different material systems in terms of their physical parameters, and up-to-date experimental results culled from the latest research. An essential resource for circuit and device designers in the semiconductor industry, SiGe, GaAs, and InP Heterojunction Bipolar Transistors is also useful for graduate students in electrical engineering, applied physics, and materials science.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
A new theory is developed in this paper to explain the collapse of current gain in multi-finger power AlGaAs/GaAs Heterojunction Bipolar Transistors. Two different collapse patterns are investigated. The reasons behind this unwanted phenomenon are clarified using a simple model to investigate the thermo-electrical interaction between the fingers. The method has been used to predict the collapse in AlGaAs/GaAs HBTs and the agreement is excellent.
Author: Alan R. Massengale
Publisher:
ISBN:
Category :
Languages : en
Pages : 226
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Book Description
Author: A. M. Riyaz
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Beth Olivia Woods
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 228
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Book Description
