Potentiostatic and Pulse Electrodeposition of Copper Selenide Thin Films PDF Download
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Author: Chee Siong Koo
Publisher:
ISBN:
Category : Electroplating
Languages : en
Pages : 236
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Author: Chee Siong Koo
Publisher:
ISBN:
Category : Electroplating
Languages : en
Pages : 236
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Book Description
Author: Norhidayah Ahmad Wazir
Publisher:
ISBN:
Category : Cadmium selenide
Languages : en
Pages : 346
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Book Description
Author: Jonathan J. Scragg
Publisher: Springer Science & Business Media
ISBN: 3642229190
Category : Science
Languages : en
Pages : 220
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Book Description
Jonathan Scragg documents his work on a very promising material suitable for use in solar cells. Copper Zinc Tin Sulfide (CZTS) is a low cost, earth-abundant material suitable for large scale deployment in photovoltaics. Jonathan pioneered and optimized a low cost route to this material involving electroplating of the three metals concerned, followed by rapid thermal processing (RTP) in sulfur vapour. His beautifully detailed RTP studies – combined with techniques such as XRD, EDX and Raman – reveal the complex relationships between composition, processing and photovoltaic performance. This exceptional thesis contributes to the development of clean, sustainable and alternative sources of energy
Author: Mohd. Fairul Sharin Abdul Razak
Publisher:
ISBN:
Category : Electrophoretic deposition
Languages : en
Pages : 242
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Author: Nima Ghamarian
Publisher:
ISBN:
Category : Copper indium selenide
Languages : en
Pages : 228
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Author: Saravanan Nagalingam
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Al-Mamun
Publisher:
ISBN:
Category : Copper selenides
Languages : en
Pages :
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Author: Rui Kamada
Publisher: ProQuest
ISBN: 9780549926849
Category : Copper
Languages : en
Pages :
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Book Description
Cu(In, Ga)Se 2 film fabrication by the selenization of the mixed metal/metal-selenide precursors was investigated. For the precursor preparation, the combination of electro deposition, annealing, co-evaporation and pre-selenization methods were employed with sequential sputtering as a control. The precursor structures studied were CuSe/Ga/In, Cu 2-x Se/Ga/In, (Ga, In)-Se/Cu and metallic Cu-Ga/In as a control. Cu 2-x Se/Ga/In precursors were prepared from both electro deposition and co-evaporation. These precursors were selenized in H 2 Se at at 450°C for 5, 15, and 90min. The structures of the precursors and reacted films were examined in terms of the crystalline phases, compositions and morphologies by scanning electron microscopy, energy dispersive spectroscopy, symmetric and asymmetric X-ray diffraction, and Auger electron spectroscopy. The similar selenization reaction rates were obtained for the precursors with copper selenide/Ga/In structures as that for the control precursor while that for the (Ga, In)-Se/Cu seems to be slower than the control. Ga accumulation at the backside of the selenized film was universally observed for the precursors including the control Cu-Ga/In precursor, with the exception of one precursor with the structure of CuSe/Ga/In made from electro deposition. For the CuSe/Ga/In precursor, a hill-like Ga profile with the maximum Ga concentration at the middle of the film was obtained. In addition, increased Ga composition at the front side of the selenized film was obtained for the Cu 2-x Se/Ga/In precursor made from electro deposition compared to the control. The device performance of the solar cells made of these selenized films were also investigated and related to the film properties. The comparable conversion efficiencies were obtained from the three precursors with copper selenide/Ga/In structures as the control. The long wavelength edge of external quantum efficiency curve indicates larger bandgap than the control for the films made from the two precursors including the CuSe/Ga/In and Cu 2-x Se/Ga/In, both started with electron deposition. The enhanced Ga incorporation into Cu(In, Ga)Se 2 structure corresponds to the larger bandgap for these precursors.
Author: Sreekanth Mandati
Publisher:
ISBN:
Category : Technology
Languages : en
Pages :
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Book Description
CuInSe2 (CIS) and Cu(In,Ga)Se2 (CIGS) semiconductors are the most studied absorber materials for thin films solar cells due to their direct bandgap and large absorption coefficient. The highly efficient CIGS devices are often fabricated using expensive vacuum based technologies; however, recently electrodeposition has been demonstrated to produce CIGS devices with high efficiencies and it is easily amenable for large area films of high quality with effective material use and high deposition rate. In this context, this chapter discusses the recent developments in CIS and CIGS technologies using electrodeposition. In addition, the fundamental features of electrodeposition such as direct current, pulse and pulse-reverse plating and their application in the fabrication of CIS and CIGS films are discussed. In conclusion, the chapter summarizes the utilization of pulse electrodeposition for fabrication of CIS and CIGS films while making a recommendation for exploring the group's unique pulse electroplating method.
Author:
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 580
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