Porous Silicon Carbide and Gallium Nitride PDF Download
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Author: Randall M. Feenstra
Publisher: John Wiley & Sons
ISBN: 9780470751824
Category : Technology & Engineering
Languages : en
Pages : 332
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Book Description
Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more
Author: Randall M. Feenstra
Publisher: John Wiley & Sons
ISBN: 9780470751824
Category : Technology & Engineering
Languages : en
Pages : 332
Get Book
Book Description
Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more
Author: Electrochemical Society
Publisher:
ISBN: 9781623320959
Category :
Languages : en
Pages : 466
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Book Description
Author: M. Dudley
Publisher: The Electrochemical Society
ISBN: 1607688247
Category :
Languages : en
Pages : 297
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Book Description
Author: K. Shenai
Publisher: The Electrochemical Society
ISBN: 1607682621
Category :
Languages : en
Pages : 361
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Book Description
Author: K. Shenai
Publisher: The Electrochemical Society
ISBN: 1607685442
Category :
Languages : en
Pages : 312
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Book Description
Author: M. Dudley
Publisher: The Electrochemical Society
ISBN: 160768859X
Category : Science
Languages : en
Pages : 122
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Book Description
Author: Electrochemical Society (United States). Dielectric Science and Technology Division
Publisher: ECS Transactions
ISBN: 9781566779081
Category :
Languages : en
Pages : 351
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Book Description
This issue of ECS Transactions covers state-of-the-art of GaN and SiC material and device technologies for power switching and power amplification applications.
Author: Cheah Sook Fong
Publisher: Penerbit USM
ISBN: 9674611231
Category : Science
Languages : en
Pages :
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Book Description
Photoelectrochemical (PEC) etching is a simple and inexpensive wet etching approach that is widely used to fabricate porous gallium nitride (GaN) thin films. However, many fundamental issues on the etching mechanism and the optical response of the fabricated porous structure still remain unclear. In this book, PEC etched porous GaN thin films with a variety of morphologies such as circular, hexagonal, leaf like-, and honeycomb-like patterns were described in detail. The effects of semiconductor types, etching voltage and etching duration on the surface morphology and the optical response of the fabricated porous structure were discussed. Attenuated total reflection method which is very sensitive to the surface layer of the porous GaN was applied to extract the carrier concentration, porosity, and layer thicknesses or the porous layer. Through this book, a better understanding of the PEC etching of the porous GaN can be obtained.
Author: Stephen E. Saddow
Publisher: Elsevier
ISBN: 0123859077
Category : Science
Languages : en
Pages : 496
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Book Description
Silicon Carbide (SiC) is a wide-band-gap semiconductor biocompatible material that has the potential to advance advanced biomedical applications. SiC devices offer higher power densities and lower energy losses, enabling lighter, more compact and higher efficiency products for biocompatible and long-term in vivo applications ranging from heart stent coatings and bone implant scaffolds to neurological implants and sensors. The main problem facing the medical community today is the lack of biocompatible materials that are also capable of electronic operation. Such devices are currently implemented using silicon technology, which either has to be hermetically sealed so it cannot interact with the body or the material is only stable in vivo for short periods of time. For long term use (permanent implanted devices such as glucose sensors, brain-machine-interface devices, smart bone and organ implants) a more robust material that the body does not recognize and reject as a foreign (i.e., not organic) material is needed. Silicon Carbide has been proven to be just such a material and will open up a whole new host of fields by allowing the development of advanced biomedical devices never before possible for long-term use in vivo. This book not only provides the materials and biomedical engineering communities with a seminal reference book on SiC that they can use to further develop the technology, it also provides a technology resource for medical doctors and practitioners who are hungry to identify and implement advanced engineering solutions to their everyday medical problems that currently lack long term, cost effective solutions. Discusses Silicon Carbide biomedical materials and technology in terms of their properties, processing, characterization, and application, in one book, from leading professionals and scientists Critical assesses existing literature, patents and FDA approvals for clinical trials, enabling the rapid assimilation of important data from the current disparate sources and promoting the transition from technology research and development to clinical trials Explores long-term use and applications in vivo in devices and applications with advanced sensing and semiconducting properties, pointing to new product devekipment particularly within brain trauma, bone implants, sub-cutaneous sensors and advanced kidney dialysis devices
Author: Muthu Wijesundara
Publisher: Springer Science & Business Media
ISBN: 1441971211
Category : Technology & Engineering
Languages : en
Pages : 247
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Book Description
Silicon Carbide Microsystems for Harsh Environments reviews state-of-the-art Silicon Carbide (SiC) technologies that, when combined, create microsystems capable of surviving in harsh environments, technological readiness of the system components, key issues when integrating these components into systems, and other hurdles in harsh environment operation. The authors use the SiC technology platform suite the model platform for developing harsh environment microsystems and then detail the current status of the specific individual technologies (electronics, MEMS, packaging). Additionally, methods towards system level integration of components and key challenges are evaluated and discussed based on the current state of SiC materials processing and device technology. Issues such as temperature mismatch, process compatibility and temperature stability of individual components and how these issues manifest when building the system receive thorough investigation. The material covered not only reviews the state-of-the-art MEMS devices, provides a framework for the joining of electronics and MEMS along with packaging into usable harsh-environment-ready sensor modules.
