Author: David Perese
Publisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 158
Book Description
Plasma Enhanced Chemical Vapor Deposition of Stress Free Tungsten Films
Author: David Perese
Publisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 158
Book Description
Publisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 158
Book Description
Plasma-enhanced Chemical Vapor Deposition and Characterization of Tungsten Films
Author: John Ka-ngai Chu
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 270
Book Description
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 270
Book Description
Plasma-Enhanced Chemical Vapor Deposition of Tungsten Films
Author: J. K. Chu
Publisher:
ISBN:
Category :
Languages : en
Pages : 4
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 4
Book Description
Plasma-enhanced Chemical Vapor Deposition and Plasma Etching of Tungsten Films
Author: Ching Cheong Tang
Publisher:
ISBN:
Category :
Languages : en
Pages : 310
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 310
Book Description
Plasma Enhanced Chemical Vapor Deposition of Tungsten
Author: Matthew A. Mahowald
Publisher:
ISBN:
Category :
Languages : en
Pages : 132
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 132
Book Description
Modeling of Chemical Vapor Deposition of Tungsten Films
Author: Chris R. Kleijn
Publisher: Birkhäuser
ISBN: 3034877412
Category : Science
Languages : en
Pages : 138
Book Description
Semiconductor equipment modeling has in recent years become a field of great interest, because it offers the potential to support development and optimization of manufacturing equipment and hence reduce the cost and improve the quality of the reactors. This book is the result of two parallel lines of research dealing with the same subject - Modeling of Tungsten CVD processes -, which were per formed independently under very different boundary conditions. On the one side, Chris Kleijn, working in an academic research environment, was able to go deep enough into the subject to laya solid foundation and prove the validity of all the assumptions made in his work. On the other side, Christoph Werner, working in the context of an industrial research lab, was able to closely interact with manufacturing and development engineers in a modern submicron semiconductor processing line. Because of these different approaches, the informal collaboration during the course of the projects proved to be extremely helpful to both sides, even though - or perhaps because - different computer codes, different CVD reactors and also slightly different models were used. In spite of the inconsistencies which might arise from this double approach, we feel that the presentation of both sets of results in one book will be very useful for people working in similar projects.
Publisher: Birkhäuser
ISBN: 3034877412
Category : Science
Languages : en
Pages : 138
Book Description
Semiconductor equipment modeling has in recent years become a field of great interest, because it offers the potential to support development and optimization of manufacturing equipment and hence reduce the cost and improve the quality of the reactors. This book is the result of two parallel lines of research dealing with the same subject - Modeling of Tungsten CVD processes -, which were per formed independently under very different boundary conditions. On the one side, Chris Kleijn, working in an academic research environment, was able to go deep enough into the subject to laya solid foundation and prove the validity of all the assumptions made in his work. On the other side, Christoph Werner, working in the context of an industrial research lab, was able to closely interact with manufacturing and development engineers in a modern submicron semiconductor processing line. Because of these different approaches, the informal collaboration during the course of the projects proved to be extremely helpful to both sides, even though - or perhaps because - different computer codes, different CVD reactors and also slightly different models were used. In spite of the inconsistencies which might arise from this double approach, we feel that the presentation of both sets of results in one book will be very useful for people working in similar projects.
Synthesis of Carbon and Tungsten Based Thin Films by Plasma Enhanced Chemical Vapor Deposition
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Plasma-enhanced Chemical Vapor Deposition of Tungsten Silicide
Author: Andris Edgar Petriceks
Publisher:
ISBN:
Category :
Languages : en
Pages : 326
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 326
Book Description
Chemical Vapor Deposition of Tungsten and Tungsten Silicides for VLSI/ ULSI Applications
Author: John E.J. Schmitz
Publisher: William Andrew
ISBN:
Category : Computers
Languages : en
Pages : 264
Book Description
Publisher description.
Publisher: William Andrew
ISBN:
Category : Computers
Languages : en
Pages : 264
Book Description
Publisher description.
Plasma Enhanced Chemical Vapor Depsoition of Tungsten Carbide Films on Iron
Author: Narayan Vaidyanathan
Publisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 52
Book Description
Publisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 52
Book Description