Plasma-assisted Laser Deposition of High T [subscript C] Oxide Superconducting Thin Films PDF Download
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![Plasma-assisted Laser Deposition of High T [subscript C] Oxide Superconducting Thin Films PDF](https://books.google.com/books/content/images/frontcover/DAM9twAACAAJ?fife=w150-h200)
Author: Sarath Witanachchi
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ISBN:
Category :
Languages : en
Pages :
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![Plasma-assisted Laser Deposition of High T [subscript C] Oxide Superconducting Thin Films PDF](https://books.google.com/books/content/images/frontcover/DAM9twAACAAJ?fife=w80-h100)
Author: Sarath Witanachchi
Publisher:
ISBN:
Category :
Languages : en
Pages :
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![Microstructure and Properties of Laser Deposited High T[subscript C] Superconducting Thin Films PDF](https://books.google.com/books/content/images/frontcover/ktdnNwAACAAJ?fife=w80-h100)
Author: Rajiv Kumar Singh
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ISBN:
Category :
Languages : en
Pages : 836
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Author: Wenpin Peter Shen
Publisher:
ISBN:
Category :
Languages : en
Pages : 300
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Author: Blaine D. Johs
Publisher:
ISBN:
Category :
Languages : en
Pages : 104
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![The Study on the Growth of In-situ High-T[subscript C] Bi-Sr-Ca-Cu-O Superconducting Thin Films Using Single Target Rf Magnetron Sputtering System PDF](https://books.google.com/books/content/images/frontcover/pNdbAAAAMAAJ?fife=w80-h100)
Author: Ji Ung Lee
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ISBN:
Category :
Languages : en
Pages : 138
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Author: Kenneth Scott
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Category :
Languages : en
Pages :
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Author: Justin Lawler
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Category :
Languages : en
Pages :
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Author:
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Category :
Languages : en
Pages : 12
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Pulsed laser deposition (PLD) has been widely used for deposition of high {Tc} superconducting thin films, and has been approved as one of the best physical vapor techniques to prepare the films. The most important advantage of this technique is stoichiometric deposition, namely the films could be made with the same composition of the targets. Utilized PLD, not only thin films but also multilayers and superlattices of high {Tc} superconductors have been fabricated. In this paper, the performance of the technique will be reviewed, and the future will be speculated.
Author: T. Venkatesan
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 382
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Author: Çağla Özgit-Akgün
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659208232
Category :
Languages : en
Pages : 180
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Book Description
III-nitride compound semiconductors (AlN, GaN, InN) and their alloys have emerged as versatile and high-performance materials for a wide range of electronic and optoelectronic device applications. Although high quality III-nitride thin films can be grown at high temperatures (>1000 C) with significant rates, deposition of these films on temperature-sensitive device layers and substrates necessitates the adaptation of low-temperature methods such as atomic layer deposition (ALD). When compared to other low-temperature thin film deposition techniques, ALD stands out with its self-limiting growth mechanism, which enables the deposition of highly uniform and conformal thin films with sub-angstrom thickness control. These unique characteristics make ALD a powerful method especially for depositing films on nanostructured templates, as well as preparing alloy thin films with well-defined compositions. This monograph reports on the development of low-temperature ( 200 C) plasma-assisted ALD processes for III-nitrides, and presents detailed characterization results for the deposited thin films and fabricated nanostructures."
