Piezoelectric and Ferroelectric Properties of Lead Zirconate Titanate Thin Films PDF Download
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Author: Dong-Joo Kim
Publisher:
ISBN:
Category : Microelectromechanical systems
Languages : en
Pages : 434
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Author: Dong-Joo Kim
Publisher:
ISBN:
Category : Microelectromechanical systems
Languages : en
Pages : 434
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Author: Markys G. Cain
Publisher: Springer
ISBN: 140209311X
Category : Technology & Engineering
Languages : en
Pages : 283
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Book Description
This book presents a comprehensive review of the most important methods used in the characterisation of piezoelectric, ferroelectric and pyroelectric materials. It covers techniques for the analysis of bulk materials and thick and thin film materials and devices. There is a growing demand by industry to adapt and integrate piezoelectric materials into ever smaller devices and structures. Such applications development requires the joint development of reliable, robust, accurate and – most importantly – relevant and applicable measurement and characterisation methods and models. In the past few years there has been a rapid development of new techniques to model and measure the variety of properties that are deemed important for applications development engineers and scientists. The book has been written by the leaders in the field and many chapters represent established measurement best practice, with a strong emphasis on application of the methods via worked examples and detailed experimental procedural descriptions. Each chapter contains numerous diagrams, images, and measurement data, all of which are fully referenced and indexed. The book is intended to occupy space in the research or technical lab, and will be a valuable and practical resource for students, materials scientists, engineers, and lab technicians.
Author: Bruce A. Tuttle
Publisher: John Wiley & Sons
ISBN: 1118407229
Category : Technology & Engineering
Languages : en
Pages : 86
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Book Description
Advances in synthesis and characterization of dielectric, piezoelectric and ferroelectric thin films are included in this volume. Dielectric, piezoelectric and ferroelectric thin films have a tremendous impact on a variety of commercial and military systems including tunable microwave devices, memories, MEMS devices, actuators and sensors. Recent work on piezoelectric characterization, AFE to FE dielectric phase transformation dielectrics, solution and vapor deposited thin films, and materials integration are among the topics included. Novel approaches to nanostructuring, characterization of material properties and physical responses at the nanoscale also is included.
Author: Husein Irzaman
Publisher: BoD – Books on Demand
ISBN: 1789840139
Category : Science
Languages : en
Pages : 166
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Book Description
Ferroelectricity is a symptom of inevitable electrical polarization changes in materials without external electric field interference. Ferroelectricity is a phenomenon exhibited by crystals with a spontaneous polarization and hysteresis effects associated with dielectric changes when an electric field is given. Our fascination with ferroelectricity is in recognition of a beautiful article by Itskovsky, in which he explains the kinetics of a ferroelectric phase transition in a thin ferroelectric layer (film). We have been researching ferroelectric materials since 2001. There are several materials known for their ferroelectric properties. Barium titanate and barium strontium titanate are the most well known. Several others include tantalum oxide, lead zirconium titanate, gallium nitride, lithium tantalate, aluminium, copper oxide, and lithium niobate. There is still a blue ocean of ferroelectric applications yet to be expounded. It is and hopefully always will be a bright future.
Author: Ahmad Safari
Publisher: Springer Science & Business Media
ISBN: 0387765409
Category : Technology & Engineering
Languages : en
Pages : 483
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Book Description
The book discusses the underlying physical principles of piezoelectric materials, important properties of ferroelectric/piezoelectric materials used in today’s transducer technology, and the principles used in transducer design. It provides examples of a wide range of applications of such materials along with the appertaining rationales. With contributions from distinguished researchers, this is a comprehensive reference on all the pertinent aspects of piezoelectric materials.
Author: Cheng-Chen Hsueh
Publisher:
ISBN:
Category :
Languages : en
Pages : 296
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Author: Travis Peters
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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This thesis probes how extrinsic contributions affect the dielectric, piezoelectric, and ferroelectric properties of morphotropic phase boundary lead zirconate titanate (PZT) films. Secondly, the influence of grain and grain boundary microstructure on domain behavior under an electric field was investigated. Domain wall mobility via the Rayleigh Law was locally probed to investigate avalanche characteristics and the width of influence of individual grain boundaries on the nonlinear piezoelectric response. This was coupled with macroscopic characterization showing the dependence of the domain structure on the thermal stress induced from substrate clamping effects. The results guided an attempt to fabricate a self-powered, wireless PZT thin film insole sensor for applications involving balance detection to assist the elderly population. A novel lead-free flexoelectric array was also prototyped for eventual use in a self-powered force sensing device, that can harvest energy from a heel-strike via the direct flexoelectric effect. In undoped lead zirconate-titanate (PZT) films 1-2 [mu]m thick, domain walls move in clusters with a correlation length of ~ 0.5--2 [mu]m. Mapping of the piezoelectric nonlinearity via band excitation piezoresponse force microscopy (BE-PFM) showed that doping with niobium (Nb) increases the average concentration or mobility of domain walls without changing the cluster area of correlated domain wall motion. In contrast, manganese (Mn) doping reduces the contribution of mobile domain walls to the dielectric and piezoelectric responses without changing the cluster area for correlated motion. In both Nb and Mn doped films, cluster area increases as film thicknesses rise from 250 to 1250 nm while cluster density drops; this can be seen in spatial maps generated from the analysis of irreversible to reversible ratios of the Rayleigh coefficients. Next, the effect of microstructural features such as grain boundaries and triple points on the pinning of domain wall motion in perovskite PZT films was investigated. Spatial variability in the collective domain wall dynamics was assessed using non-linearity mapping via BE-PFM. Collocating the non-linearity maps with triple point locations (visualized by electron back scatter diffraction) allowed for exploration of the effect that local microstructure (e.g., grain boundary) has on domain wall motion. It was found that the extrinsic behavior varied with both the misorientation angle and the proximity to the grain boundary. The width of influence of individual grain boundaries on the motion of domain walls was a function of the character of the grain boundary; random grain boundaries exhibit deeper minima in [alpha]d/d33,initial and larger widths of influence (up to 905 nm) compared to coincident site lattice (CSL) boundaries (up to 572 nm). Additionally, triple points containing larger numbers of random boundaries exhibited non-Rayleigh behavior to greater distances, suggesting that the triple point provides either a deep potential minimum or a region where domain wall motion is unfavorable. Piezoelectric thin films were dip coated onto flexible metal substrates to investigate the dependence of macroscopic dielectric and ferroelectric properties on the coefficient of thermal expansion mismatch and substrate thickness. The bending stiffness was controlled by the thickness of the substrate. Grazing incidence x-ray diffraction displayed distinct peak splitting for Nb-doped PZT on flexible Pt, Ni, Ag, and stiff Ni substrates, where the out-of-plane d-spacing and integrated peak area for c-domains was highest with the largest film compressive stress. As expected, PZT films on stiff Si were under tensile stress and contained more in-plane domains. The dielectric permittivity was highest in PZT on stiff Si and lowest for PZT on thick Ni, while remanent polarization displayed the opposite trend, commensurate with the residual stress state as well as the resistance to bending in thick substrates as a strain-relief mechanism. The irreversible Rayleigh coefficient decreased dramatically upon poling for PZT on flexible substrates compared to PZT on stiff substrates; the [alpha][epsilon]/[epsilon]initial ratio was 56% higher in PZT on a flexible Ni substrate relative to a stiff Ni substrate at 100 Hz prior to electrical poling. This investigation distinguishes the impact of substrate flexibility from thermal expansion on ferroelectric domain mobility and provides dip coating conditions for high quality piezoelectric films on any substrate. The resulting PZT films on metal foils were employed in the fabrication of a low power insole embedded force sensor array attempting to monitor a patient's balance and weight distribution while standing, walking, or running. Flexible piezoelectric films as force sensors eliminate the need for standby energy, providing high sensitivity and flexibility in sensor array design. Lead zirconate-titanate piezoelectric films 1 [mu]m thick were dip coated onto a 25 [mu]m thick stainless steel flexible metal foil. The film displayed a 47% Lotgering factor for the 100 crystallographic direction and exhibited a high-density granular perovskite structure with little pyrochlore near the middle and bottom of the dip cast film. The films showed high remanent polarization values of +28.2 [mu]C/cm2 and -24.3 [mu]C/cm2 and typical coercive fields of 59.4 kV/cm and -56.7 kV/cm. This piezoelectric sensing array with 24 photolithographically-defined electrodes enabled the simulation of a single toe response, the ball of the foot rolling during a step response, and a heel-strike emulation response. Voltage measurements extracted from cyclic applied forces from 0 to 30 N showed a linear response with a sensitivity of -9.76 mV/N between 0 to 12 N and a nonlinear response between 12 to 30 N. The roll test provided ~100 mV responses when expected during a perpendicular and diagonal roll on four individual sensors, each with fast response times and some mixture of bending and compressive stresses. The heel-strike emulation above a single electrode exhibited a response of ~300 mV with 60 N compressive force, ~100 mV from a nearby electrode, and minimal response from electrodes further from the applied force. A discrete circuit was designed and tested on a printed circuit board for multi-channel sensing, digitization, amplification, and wireless transmission of the activation signal. Finally, a lead-free flexoelectric device was fabricated in an attempt to provide a power-source for the electronics associated with the PZT film insole sensor. Flexoelectric polarization output scales with dielectric permittivity and strain gradient; thus, it is proposed that a barrier layer capacitor with doped silicon as the conducting medium will enhance the flexoelectric coefficient via space charge polarizability. A cantilever beam was fabricated as proof of concept, which displayed a flexoelectric coefficient of 4.9 ± 0.4 [mu]C/m. Furthermore, a centrosymmetric 100 silicon wafer was processed with an anisotropic wet etchant into truncated pyramid arrays varying in size from 100s of microns to tens of microns. A dielectric passivation layer acted as the insulating region within the asymmetric barrier layer capacitor, and interfacial space charge polarizability generated effective permittivities that exceed those possible with paraelectrics. The novel centrosymmetric flexoelectric fabrication procedure exhibited here generated the capability to decrease the structure size by orders of magnitude as well, thereby increasing the flexoelectric polarization response in proportion. A scanning probe-based methodology was developed to directly measure the local converse flexoelectric response of a single pyramid with a height of 70 [mu]m. The feasibility of ferroelectric material-free flexoelectricity was analyzed via both direct and converse flexoelectric measurements at the macro-scale and nano-scale.
Author:
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ISBN:
Category :
Languages : en
Pages :
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The purpose of this research has been to demonstrate the possibility of integrating piezoelectric, dielectric and ferroelectric- lead and barium based oxide thin films and PVDF polymer on flexible metal substrates for microelectronic applications. Investigations on the key processing parameters and properties relationship for lead zirconate titanate (PZT, 52D 8) and barium zirconate titanate (BZT, 35D 5) based thin films on Cu foils were performed and studied. The impact of the oxygen partial pressure on the electrical properties of PZT and BZT thin films during processing has been explored, and demonstrated that high quality films and interfaces can be achieved through control of the pO2 within a window predicted by thermodynamic stability considerations. It should be noted that the high temperature processing of barium based ferroelectric oxides can be processed on Cu foils in a wider window of pO2 compared to that of processing lead based ferroelectric oxides. Also, the high volatile nature of lead makes the processing of lead based ferroelectric oxides difficult. Considering these issues, this work shows the processing technique undertaken to achieve high quality barium and lead based oxide thin films on Cu foils. The demonstration has broad implications, opening up the possibility of the use of low cost, high conductivity copper electrodes for a range of Pb-based and Ba-based perovskite materials, including PZT films in embedded printed circuit board applications for capacitors, varactors, and sensors; multilayer PZT piezoelectric stacks; and multilayer lead magnesium niobate-lead titanate-based dielectric and electrostrictive devices. In the case of ferroelectric PZT films on Cu foil, the capacitors do not fatigue upon repeated switching like those with Pt noble metal electrodes. Instead they appear to be fatigue-resistant like ferroelectric capacitors with oxide electrodes. This may have implications for ferroelectric nonvolatile memories. The eff.
Author: Masanori Okuyama
Publisher: Springer Science & Business Media
ISBN: 9783540241638
Category : Computers
Languages : en
Pages : 272
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Book Description
Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.
Author:
Publisher:
ISBN:
Category : Ferroelectric crystals
Languages : en
Pages : 434
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Book Description
