Author: Carl Wilmsen
Publisher: Springer Science & Business Media
ISBN: 1468448358
Category : Science
Languages : en
Pages : 472
Book Description
The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Physics and Chemistry of III-V Compound Semiconductor Interfaces
Author: Carl Wilmsen
Publisher: Springer Science & Business Media
ISBN: 1468448358
Category : Science
Languages : en
Pages : 472
Book Description
The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Publisher: Springer Science & Business Media
ISBN: 1468448358
Category : Science
Languages : en
Pages : 472
Book Description
The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Papers from the 24th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces
Author: Conference on the Physics and Chemistry of Semiconductor Interfaces (24, 1997, Research Triangle Park, NC)
Publisher:
ISBN:
Category :
Languages : en
Pages : 17
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 17
Book Description
Proceedings of the Annual Conference on the Physics and Chemistry of Semiconductor Interfaces ; 10
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Proceedings of the 17th annual Conference on the Physics and Chemistry of Semiconductor Interfaces
Author: Conference on the Physics and Chemistry of Semiconductor Interfaces (17, 1990, Clearwater, Fla.)
Publisher:
ISBN:
Category :
Languages : en
Pages : 18
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 18
Book Description
Papers from the 32nd Annual Conference on the Physics and Chemistry of Semiconductor Interfaces
Author: Conference on the Physics and Chemistry of Semiconductor Interfaces. 32, 2005, Bozeman, Mont..
Publisher:
ISBN:
Category :
Languages : en
Pages : 23
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 23
Book Description
Proceedings of the ... Annual Conference on the Physics and Chemistry of Semiconductor Interfaces
Author: Conference on the Physics and Chemistry of Semiconductor Interfaces
Publisher:
ISBN:
Category :
Languages : en
Pages : 301
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 301
Book Description
Physics and Chemistry of Semiconductor Interfaces
Author: Robert S. Bauer
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages :
Book Description
Physics and Chemistry of Semiconductor Interfaces
Author: T. C. McGill
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Semiconductor Interfaces: Formation and Properties
Author: Guy LeLay
Publisher: Springer Science & Business Media
ISBN: 3642729673
Category : Science
Languages : en
Pages : 399
Book Description
The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.
Publisher: Springer Science & Business Media
ISBN: 3642729673
Category : Science
Languages : en
Pages : 399
Book Description
The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.
Physics and Chemistry of Semiconductor Interfaces
Author: D. E. Aspnes
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description