Physical Modeling of Graphene Nanoribbon Field Effect Transistor Using Non-equilibrium Green Function Approach for Integrated Circuit Design PDF Download
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Author: Yaser Mohammadi Banadaki
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Yaser Mohammadi Banadaki
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Yaser M. Banadaki
Publisher: CRC Press
ISBN: 0429663870
Category : Science
Languages : en
Pages : 210
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Book Description
Tremendous innovations in electronics and photonics over the past few decades have resulted in the downsizing of transistors in integrated circuits, which are now approaching atomic scales. This will soon result in the creation of a growing knowledge gap between the underlying technology and state-of-the-art electronic device modeling and simulations. This book bridges the gap by presenting cutting-edge research in the computational analysis and mathematical modeling of graphene nanostructures as well as the recent progress on graphene transistors for nanoscale circuits. It inspires and educates fellow circuit designers and students in the field of emerging low-power and high-performance circuit designs based on graphene. While most of the books focus on the synthesis, fabrication, and characterization of graphene, this book shines a light on graphene models and their circuit simulations and applications in photonics. It will serve as a textbook for graduate-level courses in nanoscale electronics and photonics design and appeal to anyone involved in electrical engineering, applied physics, materials science, or nanotechnology research.
Author: Mahdi Pourfath
Publisher: Springer
ISBN: 370911800X
Category : Technology & Engineering
Languages : en
Pages : 268
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Book Description
For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time. In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented. The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions. Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated. All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies and scattering self-energies, are examined and efficient methods for their evaluation are explained. Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires and low-dimensional thermoelectric devices and photodetectors are discussed.
Author: Dinadayalane Tandabany
Publisher: Elsevier
ISBN: 0323991017
Category : Science
Languages : en
Pages : 400
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Book Description
Properties and Functionalization of Graphene: Computational Chemistry Approaches, Volume 21 shows how computational chemistry can be used to explore molecular interactions when modeling and manipulating graphene's properties for varied applications. Sections compare results and experimental evidence, cover the experimental techniques employed in the functionalization of graphene and associated challenges, and delve into the properties of functionalized graphene. Under the guidance of its expert editor, this book shares insights from a global team of specialists, making it an authoritative, practical guide for all those studying, developing or applying graphene across a whole range of fields. Provides practical insights into the latest computational approaches used in modeling the properties of functionalized graphene Includes detailed methods and step-by-step guidance on key processes that are supported throughout with examples Highlights the electronic properties of functionalized graphene
Author: Iraj Sadegh Amiri
Publisher: Springer
ISBN: 9811065500
Category : Technology & Engineering
Languages : en
Pages : 92
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Book Description
This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss’s law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors.
Author: Noraliah Aziziah Md. Amin
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 94
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Book Description
Author: Kirti Kant K. Paulla
Publisher:
ISBN:
Category : Absorption
Languages : en
Pages : 128
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Book Description
We investigate detection mechanisms of real time sensors, based on ultra-thin (single and bi-atomic layer thick) and ultra-narrow (~1nm) graphene nanoribbons (GNRs), using first principle based theoretical methods. In the first part of this study we study the electronic and magnetic structures of bilayer graphene nanoribbons (BGNRs) beyond the conventional AA and AB stackings, by using density functional theory within both local density and generalized gradient approximations (LDA and GGA). Our results show that, irrespective of the method chosen, stacking arrangements other than the conventional ones are most stable, and result in significant modification of BGNRs characeristics. The most stable bilayer armchair and zigzag structures with a width of ~1 nm are semiconducting with band gaps of 0.04 and 0.05 eV, respectively. We show shift evolution of magnetic states and emergence of magnetization upon deformation in bilayer zigzag GNRs. Band gap dependence on shift can be used to design accurate nanosensors. In the second part of this study we study detection of CO and CO2 gas molecules by change in quantum conductance of armchair graphene nanoribbons (AGNR) with a width of ~1 nm. Quantum conductance modulations are calculated by using second-order Møller-Plesset (MP2) method and density functional theory (DFT) for geometry optimization and a hybrid approach for electronic structure calculations. We determine stable and metastable physisorption orientations of gas molecules with varying concentrations. Our MP2-calculated binding energies relate 8.33% and 16.33% surface coverages of CO and CO2, respectively, to 1.72x104 and 497 parts per million (ppm). With such concentrations molecules adsorption results in conductance characteristics shifts on the order of few meV. As the concentrations detected in experiments are much less, other mechanisms including substrate and/or carrier gas doping as well as adsorption on defects or electrodes may contribute toward gas sensing using graphene plates. We also discuss temperature effects and propose possible methods for improving gas detection by GNRs. Next, we studied interactions of single and double NO2 molecules with graphene nanoribbons using first principles, for nanoelectronic-based sensing of extremely low NO2 concentrations. Adsorption geometries, energy barriers, and room temperature rate constants are determined to assess reaction kinetics. Resultant modulations of quantum transport are determined through Green's function implementation of Landauer's formalism. We show that formation of hydrogen bonded NO2 at edge and physisorbed NO2 at center are processes without barriers, whereas chemisorptions at center or edge are activated processes. Detectable current decrease is predicted for higher concentration hydrogen bonded or for chemisorption cases. Nonbonding and weak sp3 hybridization at the edge of AGNR are shown to be more favorable than center adsorptions, revealing increased edge reactivity compared to graphene. Raman spectra for NO2 chemisorption cases are simulated and discussed with characterization and sensing point of view. We discuss possible measures to enhance sensitivity of GNRs for detecting nitrogen dioxide and similar molecules. We also address the issue of room-temperature effects on electronic transport modulations in AGNR used as a gas sensor. Coherent (excluding electron-phonon interactions) and non-coherent (including electron-phonon interactions) transports are calculated using nonequilibrium Green's function formalism and Born approximation. While these calculations often are computationally demanding, we show that within nanosensor context with physisorbed molecules simple approximations can be made that significantly reduce the calculation time without affecting the results qualitatively. The non-coherent contributions arising from CO and CO2 vibrations turn out to be a few order of magnitudes less than the coherent transmission, with low-energy molecular vibrons having a larger effect that than that of high-energy ones. We discuss the contribution of each phonon mode to electron transmission, and assess the thermal stability of sensor response for AGNR-based CO and CO2 nanosensors at various temperatures.
Author: Omar Azzaroni
Publisher: John Wiley & Sons
ISBN: 3527349901
Category : Technology & Engineering
Languages : en
Pages : 453
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Book Description
Graphene Field-Effect Transistors In-depth resource on making and using graphene field effect transistors for point-of-care diagnostic devices Graphene Field-Effect Transistors focuses on the design, fabrication, characterization, and applications of graphene field effect transistors, summarizing the state-of-the-art in the field and putting forward new ideas regarding future research directions and potential applications. After a review of the unique electronic properties of graphene and the production of graphene and graphene oxide, the main part of the book is devoted to the fabrication of graphene field effect transistors and their sensing applications. Graphene Field-Effect Transistors includes information on: Electronic properties of graphene, production of graphene oxide and reduced graphene oxide, and graphene functionalization Fundamentals and fabrication of graphene field effect transistors, and nanomaterial/graphene nanostructure-based field-effect transistors Graphene field-effect transistors integrated with microfluidic platforms and flexible graphene field-effect transistors Graphene field-effect transistors for diagnostics applications, and DNA biosensors and immunosensors based on graphene field-effect transistors Graphene field-effect transistors for targeting cancer molecules, brain activity recording, bacterial detection, and detection of smell and taste Providing both fundamentals of the technology and an in-depth overview of using graphene field effect transistors for fabricating bioelectronic devices that can be applied for point-of-care diagnostics, Graphene Field-Effect Transistors is an essential reference for materials scientists, engineering scientists, laboratory medics, and biotechnologists.
Author: Raghu Murali
Publisher: Springer Science & Business Media
ISBN: 1461405483
Category : Technology & Engineering
Languages : en
Pages : 271
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Book Description
Graphene has emerged as a potential candidate to replace traditional CMOS for a number of electronic applications; this book presents the latest advances in graphene nanoelectronics and the potential benefits of using graphene in a wide variety of electronic applications. The book also provides details on various methods to grow graphene, including epitaxial, CVD, and chemical methods. This book serves as a spring-board for anyone trying to start working on graphene. The book is also suitable to experts who wish to update themselves with the latest findings in the field.
Author: Soheli Farhana
Publisher:
ISBN:
Category :
Languages : en
Pages : 442
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Book Description
Aggressive scaling of complementary metal oxide semiconductor (CMOS) has led to higher and higher integration density, the higher performance of devices, low power consumption and more complex function. However, it will eventually reach its limit to nanoscale size in near future. As device sizes approach the nanoscale, new opportunities arise from harnessing the physical properties at the nanoscale. Carbon Nanotubes are considered as the most promising carbon nanostructure material for nanoscale electronic device. In this research, a new model of carbon nanotube field-effect transistors (CNTFET) is proposed to design logic gate circuit. In this work, simulation approaches of tight binding method and density of states (DOS) of CNT have been developed and to explore device engineering issues for better transistor performance. By analyzing the electronic properties of CNT including energy dispersion relation, effective mass, doping, carrier concentration and temperature dependent bandgap, an optimum CNT has been considered in this research. An analytical current transport model has been developed to design a better performance CNTFET by analyzing charge, surface potential of the model. By using non equilibrium green function (NEGF) formulation, a better drain current has been achieved from the proposed CNTFET model. Finally a CNTFET model has been designed by using the analytical model parameter. From the details analysis of the device physics, CNT diameter is 1.95 nm and small band-gap is 0.44 eV have been achieved from the graphene's chirality of (25, 0). From analytical model, drain current 69 μA, sub threshold swing (SS) 68mV/decade and drain induced barrier lowering (DIBL) 53.19mV/decade have been found with the channel length of 14 nano meter (nm) CNTFET. Current gain 45 dB, frequency 10 THz have been achieved from the simulation of the model by using 1.8 mS CNTFET transconductance. The logic gate circuit has been developed by using new model of CNTFET. Delay, power, power delay product (PDP), leakage current and frequency response have been simulated and compared.
