Physical Limitations of Semiconductor Devices PDF Download
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Author: Vladislav A. Vashchenko
Publisher: Springer Science & Business Media
ISBN: 0387745149
Category : Technology & Engineering
Languages : en
Pages : 337
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Book Description
Providing an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics, the purpose of the book is popularization of the physical approach for reliability assurance. Another unique aspect of the book is the coverage given to the role of local structural defects, their mathematical description, and their impact on the reliability of the semiconductor devices.
Author: Vladislav A. Vashchenko
Publisher: Springer Science & Business Media
ISBN: 0387745149
Category : Technology & Engineering
Languages : en
Pages : 337
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Book Description
Providing an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics, the purpose of the book is popularization of the physical approach for reliability assurance. Another unique aspect of the book is the coverage given to the role of local structural defects, their mathematical description, and their impact on the reliability of the semiconductor devices.
Author: S. M. Sze
Publisher: World Scientific Publishing Company Incorporated
ISBN: 9789810202101
Category : Technology & Engineering
Languages : en
Pages : 1003
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Book Description
A collection of 141 important papers on semiconductor devices covering a period of 100 years, from the earliest systematic investigation of metal-semiconductor contacts in 1874 to the first observation of the resonant tunneling in 1974. The papers are divided into four parts: bipolar, unipolar, microwave, and photonic devices, with a commentary for each part to highlight the importance of each of the papers. Acidic paper. Annotation copyrighted by Book News, Inc., Portland, OR
Author: P. Roggwiller
Publisher: Springer Science & Business Media
ISBN: 1468472631
Category : Technology & Engineering
Languages : en
Pages : 374
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Book Description
The Brown Boveri Symposia are by now part of firmly established tradition. This is the seventh event in a series which was initiated shortly afer Corporate Research was established as a separate entity within our Company; the Symposia are held every other year. The themes to date have been 1969 Flow Research on Blading 1971 Real-Time Control of Electric Power Systems 1973 High-Temperature Materials in Gas Turbines 1975 Nonemissive Electrooptic Displays 1977 Current Interruption in High-Voltage Networks 1979 Surges in High-Voltage Networks 1981 Semiconductor Devices for Power Conditioning Why have we chosen these titles? At the outset we established certain selection criteria; we felt that a subject for a Symposium should fulfill the following require ments: It should characterize a part of a thoroughly scientific discipline; in other words, it should describe an area of scholarly study and research. It should be of current interest in the sense that important results have recently been obtained and considerable research effort is underway in the international scientific community. It should bear some relation to the scientific and technological acitivity of our Company. Let us look at the requirement "current interest": Some of the topics on the list have been the subject of research for several decades, some even from the beginning of the century. One might wonder, then, why such fields could be regarded as particularly timely in the 1960s and 1970s. A few remarks on this subject therefore are in order.
Author: Ram K. Gupta
Publisher: CRC Press
ISBN: 1040040926
Category : Technology & Engineering
Languages : en
Pages : 396
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Book Description
This book provides readers with state-of-the-art knowledge of established and emerging semiconducting materials, their processing, and the fabrication of chips and microprocessors. In addition to covering the fundamentals of these materials, it details the basics and workings of many semiconducting devices and their role in modern electronics and explores emerging semiconductors and their importance in future devices. • Provides readers with latest advances in semiconductors. • Covers diodes, transistors, and other devices using semiconducting materials. • Covers advances and challenges in semiconductors and their technological applications. • Discusses fundamentals and characteristics of emerging semiconductors for chip manufacturing. This book provides directions to scientists, engineers, and researchers in materials engineering and related disciplines to help them better understand the physics, characteristics, and applications of modern semiconductors.
Author: Sergey Rumyantsev
Publisher: World Scientific
ISBN: 981447777X
Category : Technology & Engineering
Languages : en
Pages : 342
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Book Description
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Author: Christopher M. Snowden
Publisher: World Scientific
ISBN: 9789810236939
Category : Science
Languages : en
Pages : 242
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Book Description
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Author:
Publisher: ScholarlyEditions
ISBN: 1481645595
Category : Technology & Engineering
Languages : en
Pages : 564
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Book Description
Issues in Electronic Circuits, Devices, and Materials: 2012 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Lasers and Photonics. The editors have built Issues in Electronic Circuits, Devices, and Materials: 2012 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Lasers and Photonics in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Electronic Circuits, Devices, and Materials: 2012 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
Author: Sandip Tiwari
Publisher: Academic Press
ISBN: 148328929X
Category : Science
Languages : en
Pages : 845
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Book Description
This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those interested in silicon devices. Each chapter ends with exercises that have been designed to reinforce concepts, to complement arguments or derivations, and to emphasize the nature of approximations by critically evaluating realistic conditions.One of the most rigorous treatments of compound semiconductor device physics yet published**Essential reading for a complete understanding of modern devices**Includes chapter-ending exercises to facilitate understanding
Author: Michael Shur
Publisher: World Scientific
ISBN: 9812773371
Category : Technology & Engineering
Languages : en
Pages : 342
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Book Description
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices OCo power switching Schottky diodes and high temperature MESFETs OCo are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology. Contents: SiC Material Properties (G Pensl et al.); SiC Homoepitaxy and Heteroepitaxy (A S Bakin); Ohmic Contacts to SiC (F Roccaforte et al.); Silicon Carbide Schottky Barrier Diode (J H Zhao et al.); High Power SiC PiN Rectifiers (R Singh); Silicon Carbide Diodes for Microwave Applications (K Vassilevski); SiC Thyristors (M E Levinshtein et al.); Silicon Carbide Static Induction Transistors (G C DeSalvo). Readership: Technologists, scientists, engineers and graduate students working on silicon carbide or other wide band gap materials and devices."
Author: Angsuman Sarkar
Publisher: Elsevier
ISBN: 0323918336
Category : Technology & Engineering
Languages : en
Pages : 550
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Book Description
Approx.528 pagesApprox.528 pages
