Photoluminescence and Tunneling in GaAs/AlxGa1-xAs Single Quantum Wells PDF Download
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Author: Linda Jean Blue
Publisher:
ISBN:
Category : Quantum wells
Languages : en
Pages : 282
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Book Description
Author: Linda Jean Blue
Publisher:
ISBN:
Category : Quantum wells
Languages : en
Pages : 282
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Book Description
Author: Er-Xuan Ping
Publisher:
ISBN:
Category :
Languages : en
Pages : 102
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Book Description
Author: Federico Capasso
Publisher:
ISBN:
Category : Mathematics
Languages : en
Pages : 256
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Book Description
Author: Gerald B. Stringfellow
Publisher: CRC Press
ISBN: 100011225X
Category : Science
Languages : en
Pages : 680
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Book Description
Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Author:
Publisher:
ISBN:
Category : Quantum wells
Languages : en
Pages : 254
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Book Description
Author: L.L. Chang
Publisher: Springer Science & Business Media
ISBN: 1461538467
Category : Science
Languages : en
Pages : 526
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Book Description
This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects.
Author: Chih-Wei Eddy Lai
Publisher:
ISBN:
Category :
Languages : en
Pages : 362
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Book Description
Author: Kenneth Matthew Edmondson
Publisher:
ISBN:
Category :
Languages : en
Pages : 244
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Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2002
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Book Description
Author: Paola Prete
Publisher: BoD – Books on Demand
ISBN: 9537619796
Category : Science
Languages : en
Pages : 430
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Book Description
This volume is intended to orient the reader in the fast developing field of semiconductor nanowires, by providing a series of self-contained monographs focusing on various nanowire-related topics. Each monograph serves as a short review of previous results in the literature and description of methods used in the field, as well as a summary of the authors recent achievements on the subject. Each report provides a brief sketch of the historical background behind, the physical and/or chemical principles underlying a specific nanowire fabrication/characterization technique, or the experimental/theoretical methods used to study a given nanowire property or device. Despite the diverse topics covered, the volume does appear as a unit. The writing is generally clear and precise, and the numerous illustrations provide an easier understanding of the phenomena described. The volume contains 20 Chapters covering altogether many (although not all) semiconductors of technological interest, starting with the IV-IV group compounds (SiC and SiGe), carrying on with the binary and ternary compounds of the III-V (GaAs, AlGaAs, GaSb, InAs, GaP, InP, and GaN) and II-VI (HgTe, HgCdTe) families, the metal oxides (CuO, ZnO, ZnCoO, tungsten oxide, and PbTiO3), and finishing with Bi (a semimetal).
