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Author: North American Conference on Molecular Beam Epitaxy (16, 1997, Ann Arbor, Mich.)
Publisher:
ISBN: 9781563968211
Category :
Languages : en
Pages : 264
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Book Description
Author: North American Conference on Molecular Beam Epitaxy (16, 1997, Ann Arbor, Mich.)
Publisher:
ISBN: 9781563968211
Category :
Languages : en
Pages : 264
Get Book Here
Book Description
Author: J. A. Bardwell
Publisher: The Electrochemical Society
ISBN: 1566778670
Category : Technology & Engineering
Languages : en
Pages : 222
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Book Description
This issue of ECS Transactions focuses on issues pertinent to development of wide-bandgap semiconductor materials and devices, encompassing inorganic wide-bandgap semiconductors: III-nitrides (e. g. gallium nitride), II-oxides, SiC, diamond, II-VI, and also emerging materials such as organic-inorganic nanoscale structures.
Author: British Library. Document Supply Centre
Publisher:
ISBN:
Category : Conference proceedings
Languages : en
Pages : 696
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Book Description
Author: Mohamed Henini
Publisher: Newnes
ISBN: 0123918596
Category : Technology & Engineering
Languages : en
Pages : 745
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Book Description
This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. - Condenses fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community
Author:
Publisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages : 760
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Book Description
Author: D. Harame
Publisher: The Electrochemical Society
ISBN: 1566778255
Category : Science
Languages : en
Pages : 1066
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Book Description
Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
Author: Rafał Kozubski
Publisher:
ISBN:
Category : Intermetallic compounds
Languages : en
Pages : 770
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Book Description
Author: British Library. Lending Division
Publisher:
ISBN:
Category : Congresses and conventions
Languages : en
Pages : 456
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Book Description
Author:
Publisher:
ISBN:
Category : Electrooptics
Languages : en
Pages : 670
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Book Description
Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 486
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Book Description
