Oxygen- and Silicon-vacancy and Hydrogen-related Defects in Silicon Dioxide PDF Download
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Author: Jayanta Kumar Rudra
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 196
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Book Description
Author: Jayanta Kumar Rudra
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 196
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Book Description
Author: Gianfranco Pacchioni
Publisher: Springer Science & Business Media
ISBN: 9780792366850
Category : Medical
Languages : en
Pages : 636
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Book Description
Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000
Author: Anatoly Trukhin
Publisher: Cambridge Scholars Publishing
ISBN: 1527571947
Category : Science
Languages : en
Pages : 539
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Book Description
This book is devoted to the study of the properties of materials that can be in a crystalline and glassy state. Its central focus is the physics of solids, whose structure is disordered, since the existing theories of solids are based on crystal structures. The approach adopted here is based on the comparison of data for crystals and glasses formed by the same atoms, paying particular attention to the under-explored glass-forming crystals. The book will be of interest to graduate students, solid states researchers, glass technologists, and young scientists beginning research in the field of experimental physics.
Author: Gianfranco Pacchioni
Publisher: Springer Science & Business Media
ISBN: 9401009449
Category : Technology & Engineering
Languages : en
Pages : 619
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Book Description
Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
Author: Jacques I. Pankove
Publisher: Academic Press
ISBN: 0080864317
Category : Technology & Engineering
Languages : en
Pages : 655
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Book Description
Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference
Author: Daniel M. Fleetwood
Publisher: CRC Press
ISBN: 1420043773
Category : Science
Languages : en
Pages : 772
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Book Description
Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe
Author: B.E. Deal
Publisher: Springer Science & Business Media
ISBN: 1489907742
Category : Science
Languages : en
Pages : 543
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Book Description
The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
Author: Sukumar Basu
Publisher: BoD – Books on Demand
ISBN: 9533075872
Category : Science
Languages : en
Pages : 360
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Book Description
The exciting world of crystalline silicon is the source of the spectacular advancement of discrete electronic devices and solar cells. The exploitation of ever changing properties of crystalline silicon with dimensional transformation may indicate more innovative silicon based technologies in near future. For example, the discovery of nanocrystalline silicon has largely overcome the obstacles of using silicon as optoelectronic material. The further research and development is necessary to find out the treasures hidden within this material. The book presents different forms of silicon material, their preparation and properties. The modern techniques to study the surface and interface defect states, dislocations, and so on, in different crystalline forms have been highlighted in this book. This book presents basic and applied aspects of different crystalline forms of silicon in wide range of information from materials to devices.
Author: R. W. Grimes
Publisher: World Scientific
ISBN: 9789810207502
Category : Science
Languages : en
Pages : 486
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Book Description
This review volume takes an indepth look at the current research done in this important area of solid state science. Although the emphasis is on modelling the properties of definite materials, perfect crystal lattices are also considered in some detail. It is noteworthy that the review articles are written by some of the best known experts in the field.
Author: Anders Lund
Publisher: Springer
ISBN: 3319092162
Category : Science
Languages : en
Pages : 766
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Book Description
Applications of EPR in Radiation Research is a multi-author contributed volume presented in eight themes: I. Elementary radiation processes (in situ and low temperature radiolysis, quantum solids); II: Solid state radiation chemistry (crystalline, amorphous and heterogeneous systems); III: Biochemistry, biophysics and biology applications (radicals in biomaterials, spin trapping, free-radical-induced DNA damage); IV: Materials science (polymeric and electronic materials, materials for treatment of nuclear waste, irradiated food); V: Radiation metrology (EPR-dosimetry, retrospective and medical applications); VI: Geological dating; VII: Advanced techniques (PELDOR, ESE and ENDOR spectroscopy, matrix isolation); VIII: Theoretical tools (density-functional calculations, spectrum simulations).
