Author: Ziyu Liu
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Book Description
The results offer the first experimental evidence of geometrical degrees of freedom in the fractional quantum Hall effect.

Author: Alexander Shik
Publisher: World Scientific
ISBN: 9814496863
Category : Science
Languages : en
Pages : 106

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Book Description
This invaluable book is devoted to the physics, technology and device applications of semiconductor structures with ultrathin layers where the electronic properties are governed by the quantum-mechanical laws. Such structures called quantum wells or structures with the two-dimensional electron gas, have become one of the most actively investigated objects in modern solid state physics. Electronic properties of quantum wells differ dramatically from those of bulk semiconductors, which allows one to observe new types of physical phenomena, such as the quantum Hall effect and many other so-far-unknown kinetic and optical effects. This, in turn, offers wide opportunities for creating semiconductor devices based on new principles, and it has give birth to the new branch of electronics called nanoelectronics.

Author: Wolfgang J. Ossau
Publisher: Springer Science & Business Media
ISBN: 9401000786
Category : Science
Languages : en
Pages : 296

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Book Description
Proceedings of the NATO Advanced Research Workshop, held in St. Petersburg, Russia, 13-16 June 2002

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 24

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Book Description
This final report describes the activities undertaken under grant "Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots". The goal of this program was to implement optical 2-dimensional Fourier transform spectroscopy and apply it to electronic excitations, including excitons, in semiconductors. Specifically of interest are quantum wells that exhibit disorder due to well width fluctuations and quantum dots. In both cases, 2-D spectroscopy will provide information regarding coupling among excitonic localization sites.

Author: Michael Stern
Publisher:
ISBN:
Category :
Languages : en
Pages : 75

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Author: Hartmut Haug
Publisher: World Scientific Publishing Company
ISBN: 9813104600
Category : Science
Languages : en
Pages : 493

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Book Description
This substantially revised second edition of the Quantum Theory of the Optical and Electronic Properties of Semiconductors presents the basic elements needed to understand and engage in research in semiconductor physics. In this edition misprints have been corrected and new and more detailed material has been added. In order to treat the valence-band structure of semiconductors, an introduction to the k.p theory and the related description in terms of the Luttinger Hamiltonian was included. An introductory chapter on mesoscopic semiconductor structures was added which discusses the envelope function approximation and the modification caused by the spatial quantum confinement. In many chapters the results are developed in parallel first for bulk material, and then for quasi-two-dimensional quantum wells, and for quasi-one-dimensional quantum wires. Semiconductor quantum dots are treated in a separate chapter. The discussion of time-dependent and coherent phenomena in semiconductors has been considerably extended by including a section dealing with the theoretical description of photon echoes in semiconductors. After the discussion of semiconductor laser physics, optical bistability, and electroabsorption in semiconductors, a new chapter on magneto-absorption has been added, in which magneto-excitons and magneto-plasmas in two-dimensional systems are discussed. The chapter on electron kinetics due to the interaction with longitudinal-optical phonons has been extended and a discussion on carrier-carrier collisions has been added to the chapter dealing with the semiconductor bloch equations. The material is presented in sufficient detail for graduate students and researchers who have a general background in quantum mechanics. Request Inspection Copy Contents: Oscillator ModelAtom in a Classical Light FieldPeriodic Lattice of AtomsFree Carrier TransitionsMesoscopic Semiconductor StructuresIdeal Quantum GasesInteracting Electron GasPlasmons and Plasma ScreeningRetarded Green's Function for ElectronsExcitonsPolaritonsSemiconductor Bloch EquationsOptical Quasi-Equilibrium NonlinearitiesOptical BistabilityThe Semiconductor LaserCoherent Effects in SemiconductorsFree-Carrier ElectroabsorptionExciton ElectroabsorptionMagneto — OpticsSemiconductor Quantum DotsKinetics with Phonon ScatteringAppendix A: Field QuantizationAppendix B: Nonequilibrium Green's Functions Readership: Solid state physicists, engineers, materials and optical scientists.

Author: B.R. Nag
Publisher: Springer Science & Business Media
ISBN: 0306471272
Category : Science
Languages : en
Pages : 309

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Book Description
Quantum well devices have been the objects of intensive research during the last two decades. Some of the devices have matured into commercially useful products and form part of modern electronic circuits. Some others require further dev- opment, but have the promise of being useful commercially in the near future. Study of the devices is, therefore, gradually becoming compulsory for electronics specialists. The functioning of the devices, however, involve aspects of physics which are not dealt with in the available text books on the physics of semicond- tor devices. There is, therefore, a need for a book to cover all these aspects at an introductory level. The present book has been written with the aim of meeting this need. In fact, the book grew out of introductory lectures given by the author to graduate students and researchers interested in this rapidly developing area of electron devices. The book covers the subjects of heterostructure growth techniques, band-offset theory and experiments, electron states, electron-photon interaction and related phenomena, electron transport and the operation of electronic, opto-electronic and photonic quantum well devices. The theory as well as the practical aspects of the devices are discussed at length. The aim of the book is to provide a comprehensive treatment of the physics underlying the various devices. A reader after going through the book should find himself equipped to deal with all kinds of quantum well devices.

Author: Takeshi Uenoyama
Publisher:
ISBN:
Category :
Languages : en
Pages : 238

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Book Description

Author: D.J. Lockwood
Publisher: Springer Science & Business Media
ISBN: 9401119120
Category : Science
Languages : en
Pages : 443

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Book Description
Remarkable advances in semiconductor growth and processing technologies continue to have a profound impact on condensed-matter physics and to stimulate the invention of novel optoelectronic effects. Intensive research on the behaviors of free carriers has been carried out in the two-dimensional systems of semiconductor heterostructures and in the one and zero-dimensional systems of nanostructures created by the state-of-the-art fabrication methods. These studies have uncovered unexpected quantum mechanical correlations that arise because of the combined effects of strong electron-electron interactions and wave function confinement associated with reduced dimensionality. The investigations of these phenomena are currently at the frontiers of condensed-matter physics. They include areas like the fractional quantum Hall effect, the dynamics of electrons on an ultra short (femtosecond) time scale, electron behavior in quantum wires and dots, and studies of electron tunneling phenomena in ultra small semiconductor structures. Optical techniques have made important contributions to these fields in recent years, but there has been no coherent review of this work until now. The book provides an overview of these recent developments that will be of interest to semiconductor materials scientists in university, government and industrial laboratories.

Author: J.T. Devreese
Publisher: Springer Science & Business Media
ISBN: 1461319072
Category : Science
Languages : en
Pages : 444

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Book Description
The 1986 Advanced Study Institute on "The Physics of the two-Dimen sional Electron Gas" took place at the Conference Centre liTer Helme", close to Oostende (Belgium), from June 2 till 16, 1986. We were motivated to organize this Advanced Study Institute in view of the recent experimental and theoretical progress in the study of the two-dimensional electron gas. An additional motivation was our own theore tical interest in cyclotron resonance in two-dimensional electron systems at our institute. It is my pleasure to thank several instances and people who made this Advanced Study Institute possible. First of all, the sponsor of the Advanced Study Institute, the NATO Scientific Committee. Furthermore, the co sponsors: Agfa Gevaert, Bell Telephone Mfg. Co. N.V., Burroughs Belgium. Control Data. Digital Equipment Corporation, Esso Belgium. European Research Office (USA). Kredietbank. National Science Foundation (USA). Special thanks are due to the members of the Program Committee and the members of the Organizing Committee. I would also like to thank Mrs. H. Evans for typing assistance.