Optical Properties of Ion-implanted Impurities in Gallium Nitride PDF Download
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Author: R D. Metcalfe
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: R D. Metcalfe
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Eric Silkowski
Publisher:
ISBN: 9781423576570
Category : Gallium nitride
Languages : en
Pages : 330
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Luminescence and absorption measurements were used to demonstrate the efficacy of ion implantation for introducing various classes of dopants into GaN. A wide range of implantation and annealing studies were performed with several dopant species (Ar, Zn, C, O, Si, Be, Mg, Nd, Er). Room temperature ion implantation was performed on MOCVD- and MBE-grown GaN samples at energies between 100 and 1150 keV with doses ranging from 1 x 10(exp 13) to 1 x 10 (exp 15)/sq cm. Conventional furnace annealing in flowing NH3 or N2 gas resulted in good implantation damage recovery at an annealing temperature of 1000 deg C for 90 min. Annealing temperature was found to be the determining factor in implantation damage recovery. It was discovered that surface degradation occurred for annealing in an NH3 environment at temperatures above 1000 deg C. An optimal annealing temperature of 1000 deg C and an optimal annealing gas environment of NH3 were found for the optical activation of Zn, Mg, Er, and Nd. Several new luminescence features were observed for the various dopants. Zn- implanted GaN was found to have a strong luminescence peak in the blue at 2.86 eV. The energetic location and width of this luminescence peak was insensitive to temperature changes and excitation intensity changes. These properties suggested that an internal Zn center transition was responsible.
Author: James H. Edgar
Publisher: Institution of Electrical Engineers
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 692
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Based on its outstanding properties, including a wide energy band gap, high thermal conductivity, and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave transistors, and cold cathode electron emitters. This excellent reference covers the basic physical and chemical properties, surveys existing processing technology, and presents summaries of the current state-of-the-art of devices.
Author: Jin Koo Rhee
Publisher:
ISBN:
Category :
Languages : en
Pages : 138
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Author: Walter M. Gibson
Publisher:
ISBN:
Category : Language Arts & Disciplines
Languages : en
Pages : 726
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Author: Stephen J. Pearton
Publisher: Springer Science & Business Media
ISBN: 1846283590
Category : Technology & Engineering
Languages : en
Pages : 383
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Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Author:
Publisher:
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Category : Electronic apparatus and appliances
Languages : en
Pages : 216
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Author: Stephen J. Pearton
Publisher: CRC Press
ISBN: 1000448428
Category : Science
Languages : en
Pages : 556
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Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
Author: James Suk Chan
Publisher:
ISBN:
Category :
Languages : en
Pages : 280
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Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 728
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