Author: Diala Ali Haidar Ahmad
Publisher:
ISBN:
Category :
Languages : en
Pages : 140

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The aim of this thesis was to characterize the oxygen plasma generated by a 2.45 GHz microwave source that is being used for oxide thin film growth. The analysi s was conducted by optical emission spectroscopy in order to measure the product ion of dissociated oxygen atoms and the vibrational temperature of the O2 + ions in pure O2 plasma as well as in He-O2, Ne-O2, and Ar-O2 gas mixtures. A paramet ric study as a function of operating parameters, microwave power, gas pressure a nd gas mixtures (with rare gases like He, Ne, and Ar) was conducted in order to get insights on the atomic oxygen production. The evolution of the ratio of the emission line intensity of oxygen and the actinometer, argon was investigated in such systems by monitoring the 750 nm Ar line and the 777 nm O line in pure O2, He-O2, and Ne-O2 plasmas. As for Ar-O2 mixtures, the 706.5 nm He I line was use d instead of the 750 nm Ar line. The results revealed that atomic oxygen production increased in pure O2 plasma w ith increasing the microwave power from 200 to 400 W, and decreased as the gas p ressure was increased from 10 to 100 mTorr. On the other hand, the vibrational t emperature of O2 + was unaffected by the discharge power but it decreased as the pressure was raised from 10 to 100 mTorr. Moreover, the generation of atomic oxygen in the plasma increased by dilution of oxygen gas with helium and neon, particularly at dilution rates exceeding 60%. This effect was most marked at higher pressure (100 mTorr) with little correlati on with the evolution of the vibrational temperature under these conditions. The evolution of the O-atom generation with Ar dilution was significantly different from the case with Ne or He. It is found that the plasma becomes "Ar dominated" at a dilution of 20% only. These effects were discussed in view of Penning ionization mechanisms and change s in the electron density and electron temperature of the plasma, as operating p arameters are varied. The results can explain previously detected effects relate d to oxide film growth and could prove to be useful to perform film growth exper iments using rare gas-O2 plasmas.

Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 704

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Author:
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 800

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Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1218

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Author: Nini Pryds
Publisher: Elsevier
ISBN: 0081017529
Category : Technology & Engineering
Languages : en
Pages : 562

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Metal Oxide-Based Thin Film Structures: Formation, Characterization and Application of Interface-Based Phenomena bridges the gap between thin film deposition and device development by exploring the synthesis, properties and applications of thin film interfaces. Part I deals with theoretical and experimental aspects of epitaxial growth, the structure and morphology of oxide-metal interfaces deposited with different deposition techniques and new developments in growth methods. Part II concerns analysis techniques for the electrical, optical, magnetic and structural properties of thin film interfaces. In Part III, the emphasis is on ionic and electronic transport at the interfaces of Metal-oxide thin films. Part IV discusses methods for tailoring metal oxide thin film interfaces for specific applications, including microelectronics, communication, optical electronics, catalysis, and energy generation and conservation. This book is an essential resource for anyone seeking to further their knowledge of metal oxide thin films and interfaces, including scientists and engineers working on electronic devices and energy systems and those engaged in research into electronic materials. - Introduces the theoretical and experimental aspects of epitaxial growth for the benefit of readers new to the field - Explores state-of-the-art analysis techniques and their application to interface properties in order to give a fuller understanding of the relationship between macroscopic properties and atomic-scale manipulation - Discusses techniques for tailoring thin film interfaces for specific applications, including information, electronics and energy technologies, making this book essential reading for materials scientists and engineers alike

Author: Ram Ekwal Sah
Publisher: The Electrochemical Society
ISBN: 9781566774598
Category : Nature
Languages : en
Pages : 606

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Author: Mark Donald Allendorf
Publisher: The Electrochemical Society
ISBN: 9781566772174
Category : Science
Languages : en
Pages : 506

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Author:
Publisher:
ISBN:
Category : Composite materials
Languages : en
Pages : 392

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Author: Ladislav Bardos
Publisher: John Wiley & Sons
ISBN: 111982687X
Category : Technology & Engineering
Languages : en
Pages : 212

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Book Description
A practical introduction to microwave plasma for processing applications at a variety of pressures In Microwave Plasma Sources and Methods in Processing Technology, the authors deliver a comprehensive introduction to microwaves and microwave-generated plasmas. Ideal for anyone interested in non-thermal gas discharge plasmas and their applications, the book includes detailed descriptions, explanations, and practical guidance for the study and use of microwave power, microwave components, plasma, and plasma generation. This reference includes over 130 full-color diagrams to illustrate the concepts discussed within. The distinguished authors discuss the plasmas generated at different levels of power, as well as their applications at reduced, atmospheric and higher pressures. They also describe plasmas inside liquids and plasma interactions with combustion flames. Microwave Plasma Sources and Methods in Processing Technology concludes with an incisive exploration of new trends in the study and application of microwave discharges, offering promising new areas of study. The book also includes: • A thorough introduction to the basic principles of microwave techniques and power systems, including a history of the technology, microwave generators, waveguides, and wave propagation • A comprehensive exploration of the fundamentals of the physics of gas discharge plasmas, including plasma generation, Townsend coefficients, and the Paschen curve • Practical discussions of the interaction between plasmas and solid surfaces and gases, including PVD, PE CVD, oxidation, sputtering, evaporation, dry etching, surface activation, and cleaning • In-depth examinations of microwave plasma systems for plasma processing at varied parameters Perfect for researchers and engineers in the microwave community, as well as those who work with plasma applications, Microwave Plasma Sources and Methods in Processing Technology will also earn a place in the libraries of graduate and PhD students studying engineering physics, microwave engineering, and plasmas.

Author: Koji Kajimura
Publisher: Springer Science & Business Media
ISBN: 4431681418
Category : Technology & Engineering
Languages : en
Pages : 1312

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Book Description
Since the discovery of high temperature superconductors, many new materials have been invented. In the last year, several new materials were also discovered, but their critical temperatures are still below lOOK. Precise physical and chemical work has made tremendous progress in the theoretical and experimental study of physical properties and carrier state characterizations. The de Haas van Alphen effect measurement showed the existence of a Fermi surface in YBCO. Flux dynamics is a well-known new problem in which flux creep and irreversibility line features are especially important for a fundamental understanding of the critical current and flux pinning. Flux pinning centers which are intentionally added using non-superconducting precipitates, neutrons, and protons, etc. increase critical currents to practical levels. The analysis of electric and magnetic properties are expected to reveal the pinning mechanism and also to further application development. As for wires and bulks, many melt-like sintering techniques have improved the material performance of critical current densities. A new seeding Quench-Melt Growth technique enlarged crystal size and increased the repulsion force. These melting processes, in conjunction with a mechanical strength improvement have been effectively introduced into wire fabrication in order to realize kilometer range wires and will put the oxide wires to practical use. Where thin film is con cerned, when many fabrication methods had been developed using the assistance effect of activated oxygen such as ozone and oxygen radicals, a high current 2 density of 106A/cm at 77K was reported.