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Author: Vijay Narayanan
Publisher: World Scientific
ISBN: 9814740497
Category : Technology & Engineering
Languages : en
Pages : 550
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Book Description
This volume provides a broad overview of the fundamental materials science of thin films that use silicon as an active substrate or passive template, with an emphasis on opportunities and challenges for practical applications in electronics and photonics. It covers three materials classes on silicon: Semiconductors such as undoped and doped Si and SiGe, SiC, GaN, and III-V arsenides and phosphides; dielectrics including silicon nitride and high-k, low-k, and electro-optically active oxides; and metals, in particular silicide alloys. The impact of film growth and integration on physical, electrical, and optical properties, and ultimately device performance, is highlighted.
Author: Vijay Narayanan
Publisher: World Scientific
ISBN: 9814740497
Category : Technology & Engineering
Languages : en
Pages : 550
Get Book Here
Book Description
This volume provides a broad overview of the fundamental materials science of thin films that use silicon as an active substrate or passive template, with an emphasis on opportunities and challenges for practical applications in electronics and photonics. It covers three materials classes on silicon: Semiconductors such as undoped and doped Si and SiGe, SiC, GaN, and III-V arsenides and phosphides; dielectrics including silicon nitride and high-k, low-k, and electro-optically active oxides; and metals, in particular silicide alloys. The impact of film growth and integration on physical, electrical, and optical properties, and ultimately device performance, is highlighted.
Author: Vijay Narayanan
Publisher:
ISBN: 9789814740487
Category : Electronic books
Languages : en
Pages : 550
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Book Description
"This volume provides a broad overview of the fundamental materials science of thin films that use silicon as an active substrate or passive template, with an emphasis on opportunities and challenges for practical applications in electronics and photonics. It covers three materials classes on silicon: Semiconductors such as undoped and doped Si and SiGe, SiC, GaN, and III-V arsenides and phosphides; dielectrics including silicon nitride and high-k, low-k, and electro-optically active oxides; and metals, in particular silicide alloys. The impact of film growth and integration on physical, electrical, and optical properties, and ultimately device performance, is highlighted."--Publisher's website.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 60
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Book Description
Author: Hasitha C. Weerasinghe
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
ABSTRACT: Iron Silicide (FeSi) films deposited on silicon substrates with the native SiO2 layer have shown a Metal-to-Insulator Transition (MIT) of more than four order of magnitude change in resistance. Modification of the SiO2/Si interface due to Fe diffusion has been attributed to the formation of this effect. In this research a systematic experimental investigation has been carried out to study the effect of the growth parameters and substrate doping type in the transition. In addition, transport properties of continuous and discontinuous films have been investigated to understand the mechanism of this metal-to-insulator transition. Four probe measurements of films deposited in p- and n-type doped Si substrates with resistivity in the range of 1-10 Omega cm showed similar temperature dependent resistance behavior with transition onsets at 250 K and 300 K respectively. These results indicate that the current transport takes place via tunneling through the SiO2 layer into the Si substrate up to the transition temperature. Current appears to switch to the film after the transition point due to the development of high interface resistance. Discontinuous FeSi films on silicon substrates showed similar resistance behavior ruling out possibility of current transport through inversion layer at the SiO2/Si interface. To investigate the role of the magnetic ion Fe, transport measurements of FeSi films were compared with those of non-magnetic metals such as Platinum (Pt) and Aluminum (Al). Absence of Metal-to-insulator transition on Pt and Al films show that the presence of magnetic moment is required for this transition. Temperature dependent Hall voltage measurements were carried out to identify the carrier type through the substrate for FeSi films deposited on p- and n-type Si substrates. Results of Hall voltage measurements proved that the type of conductivity flips from majority carriers to minority after the transition. Metal-to-insulating transition behavior of FeSi films depending on different laser fluences has been also investigated. Our results revealed as laser fluence is increased observed transition of the FeSi films reduces rapidly showing a highest magnitude of transition of about 1 M Omega for the films deposited with lowest laser fluence (0.64 J/cm2) and a lowest of about 10 Omega for the films deposited with highest laser fluence (3.83 J/cm2). Ion probe measurements indicated that the average kinetic energy of the ablated ion in the plume is considerably increased with the increase of the laser fluence. Consequently, magnitude drop in the transition can be considered due to the deeper penetration on Fe ion through the SiO2 layer. Thickness dependence study carried out for FeSi films deposited with high and low laser fluencies indicated transition slightly drops as thickness is increased, concluding the current transportation through the film becomes dominant after the transition temperature.
Author: Raymond T. Tung
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 680
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Book Description
Tremendous advances have been made in the use of silicides as contacts and interconnects in micro-electronic devices and as active layers in sensors. A flourish of novel fabrication concepts and characterization techniques has led to high-quality silicide devices and a better understanding of the electronic and micrometallurgical properties of their interfaces. However, the shrinking physical dimensions of ULSI devices beyond the deep submicron regime now poses new and serious materials challenges for the development of manufacturable silicide processes. Scientists and engineers from materials science, physics, chemistry, device, processing and other disciplines come together in this book to examine the current issues facing silicide thin-film applications. Topics include: silicide fundamentals - energetics and kinetics; processing of silicide thin films; ULSI issues; CVD silicides; semiconducting silicides; processing of germano-silicide thin films; silicides and analogs for IR detection; interfaces, surfaces and epitaxy; novel structures and techniques and properties of silicide thin films.
Author: Jianguo Zhu
Publisher: World Scientific
ISBN: 9811224005
Category : Science
Languages : en
Pages : 706
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Book Description
Thin films have an extremely broad range of applications from electronics and optics to new materials and devices. Collaborative and multidisciplinary efforts from physicists, materials scientists, engineers and others have established and advanced a field with key pillars constituting (i) the synthesis and processing of thin films, (ii) the understanding of physical properties in relation to the nanometer scale, (iii) the design and fabrication of nano-devices or devices with thin film materials as building blocks, and (iv) the design and construction of novel tools for characterization of thin films.Against the backdrop of the increasingly interdisciplinary field, this book sets off to inform the basics of thin film physics and thin film devices. Readers are systematically introduced to the synthesis, processing and application of thin films; they will also study the formation of thin films, their structure and defects, and their various properties — mechanical, electrical, semiconducting, magnetic, and superconducting. With a primary focus on inorganic thin film materials, the book also ventures on organic materials such as self-assembled monolayers and Langmuir-Blodgett films.This book will be effective as a teaching or reference material in the various disciplines, ranging from Materials Science and Engineering, Electronic Science and Engineering, Electronic Materials and Components, Semiconductor Physics and Devices, to Applied Physics and more. The original Chinese publication has been instrumental in this purpose across many Chinese universities and colleges.
Author: Charles H. Olk
Publisher:
ISBN:
Category :
Languages : en
Pages : 302
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Book Description
Author: J.L Reno
Publisher: CRC Press
ISBN: 1000112403
Category : Science
Languages : en
Pages : 401
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Book Description
Narrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.
Author: Tae Hoon Kim
Publisher:
ISBN:
Category : Sputtering (Physics)
Languages : en
Pages : 168
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Book Description
Author: Salvatore Lombardo
Publisher:
ISBN:
Category :
Languages : en
Pages : 55
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Book Description
