Author: J.L Reno
Publisher: CRC Press
ISBN: 1000112403
Category : Science
Languages : en
Pages : 401
Book Description
Narrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.
Narrow Gap Semiconductors 1995
Author: J.L Reno
Publisher: CRC Press
ISBN: 1000112403
Category : Science
Languages : en
Pages : 401
Book Description
Narrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.
Publisher: CRC Press
ISBN: 1000112403
Category : Science
Languages : en
Pages : 401
Book Description
Narrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.
Scanning Tunneling Microscopy Studies of Nano-scale Properties of III/V Semiconductor Heterostructures
Author: Songlin Zuo
Publisher:
ISBN:
Category :
Languages : en
Pages : 380
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 380
Book Description
Long Wavelength Infrared Detectors
Author: Manijeh Razeghi
Publisher: CRC Press
ISBN: 1000674371
Category : Technology & Engineering
Languages : en
Pages : 472
Book Description
This timely work presents a comprehensive overview of the development of new generations of infrared detectors based on artificially synthesized quantum structures. The growth of quantum wells and superlattices is well documents in this volume, as are the principal new superlattice technologies for long wavelength infrared detection. Featuring insightful contributions from researchers working at the "cutting edge" of this exciting field, this volume is sure to become an essential reference for advanced graduate students and researchers alike.
Publisher: CRC Press
ISBN: 1000674371
Category : Technology & Engineering
Languages : en
Pages : 472
Book Description
This timely work presents a comprehensive overview of the development of new generations of infrared detectors based on artificially synthesized quantum structures. The growth of quantum wells and superlattices is well documents in this volume, as are the principal new superlattice technologies for long wavelength infrared detection. Featuring insightful contributions from researchers working at the "cutting edge" of this exciting field, this volume is sure to become an essential reference for advanced graduate students and researchers alike.
Proceedings ... Annual Meeting, Microscopy Society of America
Author: Microscopy Society of America. Meeting
Publisher:
ISBN:
Category : Electron microscopy
Languages : en
Pages : 1292
Book Description
Publisher:
ISBN:
Category : Electron microscopy
Languages : en
Pages : 1292
Book Description
Internal Photoemission Spectroscopy
Author: Valeri V. Afanas'ev
Publisher: Elsevier
ISBN: 0080555896
Category : Technology & Engineering
Languages : en
Pages : 312
Book Description
The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the conventional external photoemission spectroscopy by analysing interfaces separated from the sample surface by a layer of a different solid or liquid. IPE is providing the most straightforward and, therefore, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method provides the unique capability of analysing the heterostructures relevant to the modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication.In addition to the discussion of fundamental physical and technical aspects of IPE spectroscopic applications, several "hot topics are addressed. These include development of new insulating materials for advances Si MOS technology (both high-k gate insulators and low-k dielectrics for interconnect insulation), metal gate materials, development of heterostructures based on high-mobility semiconductors, etc. Thanks to a considerable activity in this field over the last few years, the recent results concerning band structure of most important interfaces involving novel materials can now be documented.- First complete description of the internal photoemission phenomena - A practical guide to internal photoemission measurements- Describes reliable energy barrier determination procedures - Surveys trap spectroscopy methods applicable to thin insulating layers- Provides an overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces- Contains a complete collection of reference data on interface band alignment for wide-bandgap insulating materials in contact with metals and semiconductors
Publisher: Elsevier
ISBN: 0080555896
Category : Technology & Engineering
Languages : en
Pages : 312
Book Description
The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the conventional external photoemission spectroscopy by analysing interfaces separated from the sample surface by a layer of a different solid or liquid. IPE is providing the most straightforward and, therefore, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method provides the unique capability of analysing the heterostructures relevant to the modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication.In addition to the discussion of fundamental physical and technical aspects of IPE spectroscopic applications, several "hot topics are addressed. These include development of new insulating materials for advances Si MOS technology (both high-k gate insulators and low-k dielectrics for interconnect insulation), metal gate materials, development of heterostructures based on high-mobility semiconductors, etc. Thanks to a considerable activity in this field over the last few years, the recent results concerning band structure of most important interfaces involving novel materials can now be documented.- First complete description of the internal photoemission phenomena - A practical guide to internal photoemission measurements- Describes reliable energy barrier determination procedures - Surveys trap spectroscopy methods applicable to thin insulating layers- Provides an overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces- Contains a complete collection of reference data on interface band alignment for wide-bandgap insulating materials in contact with metals and semiconductors
Chemical Abstracts
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2002
Book Description
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2002
Book Description
Photodetectors
Author: Gail J. Brown
Publisher: SPIE-International Society for Optical Engineering
ISBN: 9780819435651
Category : Technology & Engineering
Languages : en
Pages : 428
Book Description
Publisher: SPIE-International Society for Optical Engineering
ISBN: 9780819435651
Category : Technology & Engineering
Languages : en
Pages : 428
Book Description
Technology of Quantum Devices
Author: Manijeh Razeghi
Publisher: Springer Science & Business Media
ISBN: 1441910565
Category : Technology & Engineering
Languages : en
Pages : 570
Book Description
Technology of Quantum Devices offers a multi-disciplinary overview of solid state physics, photonics and semiconductor growth and fabrication. Readers will find up-to-date coverage of compound semiconductors, crystal growth techniques, silicon and compound semiconductor device technology, in addition to intersubband and semiconductor lasers. Recent findings in quantum tunneling transport, quantum well intersubband photodetectors (QWIP) and quantum dot photodetectors (QWDIP) are described, along with a thorough set of sample problems.
Publisher: Springer Science & Business Media
ISBN: 1441910565
Category : Technology & Engineering
Languages : en
Pages : 570
Book Description
Technology of Quantum Devices offers a multi-disciplinary overview of solid state physics, photonics and semiconductor growth and fabrication. Readers will find up-to-date coverage of compound semiconductors, crystal growth techniques, silicon and compound semiconductor device technology, in addition to intersubband and semiconductor lasers. Recent findings in quantum tunneling transport, quantum well intersubband photodetectors (QWIP) and quantum dot photodetectors (QWDIP) are described, along with a thorough set of sample problems.
Semiconductor Nanostructures for Optoelectronic Applications
Author: Todd D. Steiner
Publisher: Artech House
ISBN: 9781580537520
Category : Technology & Engineering
Languages : en
Pages : 438
Book Description
Annotation Tiny structures measurable on the nanometer scale (one-billionth of a meter) are known as nanostructures, and nanotechnology is the emerging application of these nanostructures into useful nanoscale devices. As we enter the 21st century, more and more professional are using nanotechnology to create semiconductors for a variety of applications, including communications, information technology, medical, and transportation devices. Written by today's best researchers of semiconductor nanostructures, this cutting-edge resource provides a snapshot of this exciting and fast-changing field. The book covers the latest advances in nanotechnology and discusses the applications of nanostructures to optoelectronics, photonics, and electronics.
Publisher: Artech House
ISBN: 9781580537520
Category : Technology & Engineering
Languages : en
Pages : 438
Book Description
Annotation Tiny structures measurable on the nanometer scale (one-billionth of a meter) are known as nanostructures, and nanotechnology is the emerging application of these nanostructures into useful nanoscale devices. As we enter the 21st century, more and more professional are using nanotechnology to create semiconductors for a variety of applications, including communications, information technology, medical, and transportation devices. Written by today's best researchers of semiconductor nanostructures, this cutting-edge resource provides a snapshot of this exciting and fast-changing field. The book covers the latest advances in nanotechnology and discusses the applications of nanostructures to optoelectronics, photonics, and electronics.
Narrow-gap Semiconductor Photodiodes
Author: Antoni Rogalski
Publisher: SPIE Press
ISBN: 9780819436191
Category : Science
Languages : en
Pages : 464
Book Description
In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two-dimensional solids. Investigations of the performance of photodiodes operated in different spectral regions are presented.
Publisher: SPIE Press
ISBN: 9780819436191
Category : Science
Languages : en
Pages : 464
Book Description
In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two-dimensional solids. Investigations of the performance of photodiodes operated in different spectral regions are presented.