OMVPE Synthesis and Characterization of Heterostructures Containing Arsenide/phosphide Interfaces

OMVPE Synthesis and Characterization of Heterostructures Containing Arsenide/phosphide Interfaces PDF Author: David Todd Emerson
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 808

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OMVPE Synthesis and Characterization of Heterostructures Containing Arsenide/phosphide Interfaces

OMVPE Synthesis and Characterization of Heterostructures Containing Arsenide/phosphide Interfaces PDF Author: David Todd Emerson
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 808

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Novel Gallium Nitride Based Microwave Noise and Power Heterostructure Field Effect Transistors

Novel Gallium Nitride Based Microwave Noise and Power Heterostructure Field Effect Transistors PDF Author: Eduardo Martin Chumbes
Publisher:
ISBN:
Category :
Languages : en
Pages : 790

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Chemical Abstracts

Chemical Abstracts PDF Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2540

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High Electron Mobility Transistor Structures in the Gallium Arsenide and Gallium Nitride Material Systems by Organometallic Vapor Phase Epitaxy

High Electron Mobility Transistor Structures in the Gallium Arsenide and Gallium Nitride Material Systems by Organometallic Vapor Phase Epitaxy PDF Author: Joseph Allen Smart
Publisher:
ISBN:
Category :
Languages : en
Pages : 548

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Organometallic Vapor-Phase Epitaxy

Organometallic Vapor-Phase Epitaxy PDF Author: Gerald B. Stringfellow
Publisher: Elsevier
ISBN: 0323139175
Category : Science
Languages : en
Pages : 417

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Book Description
Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport.

Scientific and Technical Aerospace Reports

Scientific and Technical Aerospace Reports PDF Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 836

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The Engineering Index Annual

The Engineering Index Annual PDF Author:
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 2264

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Book Description
Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.

Physics Briefs

Physics Briefs PDF Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1420

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Advances in III-V Semiconductor Nanowires and Nanodevices

Advances in III-V Semiconductor Nanowires and Nanodevices PDF Author: Jianye Li
Publisher:
ISBN: 9781608054152
Category : Technology & Engineering
Languages : en
Pages : 188

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Book Description
Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest for next generation optoelectronic devices including transistors, light emitting diodes, lasers, photodetectors, and solar cells. Advances in III-V Semiconductor Nanowires and Nanodevicesis an account of recent progress in the synthesis, characterization, physical properties, device fabrication, and applications of binary compound and ternary alloy III-V semiconductor nanowires. Each chapter is prepared by renowned experts in the field, describing the current state of knowledge and key areas of research. The book is written at the expert level, but also serves as a guide for researchers or graduate students aiming to enter semiconductor research.

Electrical & Electronics Abstracts

Electrical & Electronics Abstracts PDF Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1904

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