Novel Three-state Quantum Dot Gate Field Effect Transistor PDF Download
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Author: Supriya Karmakar
Publisher: Springer Science & Business Media
ISBN: 8132216350
Category : Technology & Engineering
Languages : en
Pages : 147
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Book Description
The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.
Author: Supriya Karmakar
Publisher: Springer Science & Business Media
ISBN: 8132216350
Category : Technology & Engineering
Languages : en
Pages : 147
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Book Description
The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.
Author: Alberto Credi
Publisher: Springer
ISBN: 3319511920
Category : Science
Languages : en
Pages : 179
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Book Description
The series Topics in Current Chemistry Collections presents critical reviews from the journal Topics in Current Chemistry organized in topical volumes. The scope of coverage is all areas of chemical science including the interfaces with related disciplines such as biology, medicine and materials science. The goal of each thematic volume is to give the non-specialist reader, whether in academia or industry, a comprehensive insight into an area where new research is emerging which is of interest to a larger scientific audience. Each review within the volume critically surveys one aspect of that topic and places it within the context of the volume as a whole. The most significant developments of the last 5 to 10 years are presented using selected examples to illustrate the principles discussed. The coverage is not intended to be an exhaustive summary of the field or include large quantities of data, but should rather be conceptual, concentrating on the methodological thinking that will allow the non-specialist reader to understand the information presented. Contributions also offer an outlook on potential future developments in the field.
Author: Faquir C Jain
Publisher: World Scientific
ISBN: 9813232358
Category : Technology & Engineering
Languages : en
Pages : 206
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Book Description
This book features the selected articles from the 25th annual symposiums Connecticut Microelectronics and Optoelectronics Consortium (CMOC), that focus on micro/nano-electronics and optoelectronics/Nano-photonics, to cover not only the technologies, but also the applications ranging from biosensors/nano-biosystems, to cyber security.Enabling materials research involving growth and characterization of novel devices such as multi-bit nonvolatile random access memory with fast erase, high performance circuits, and their potential applications in developing new high-speed systems. Other articles focus on emerging nanoelectronic devices including topological insulators, spatial wavefunction switching (SWS) FETs as compact high-speed 2-bit SRAM circuits, quantum dot channel (QDC) FETs. Fundamental work on critical layer thickness in ZnSe/GaAs and other material systems impacts electronic and photonic devise integrating mismatched layers are also reported. While another article investigates linearly graded GaAsP-GaAs system with emphasis on strain relaxation. Based on these technologies, area of analyzes multiple junction solar cells using semiconductors with different energy gaps, as a possible application were also featured; Pixel characterization of protein-based retinal implant, as well as a low-power and low-data-rate (100 kbps) fully integrated CMOS impulse radio ultra-wideband (IR-UWB) transmitter were investigated as a potential candidate for biomedical application. While other articles looked at carbon nanofibers/nanotubes for electrochemical sensing. In the area of cyber security, two articles present encrypted electron beam lithography fabricated nanostructures for authentication and nano-signatures for the identification of authentic electronic components.In summary, papers presented in this volume involve various aspects of high performance materials and devices for implementing high-speed electronic systems.
Author: Jun Kondo
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages :
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Book Description
Quantum dot channel (QDC) and Quantum dot gate (QDG) field effect transistors (FETs) have been fabricated on crystalline Si and poly Si thin films using cladded Si and Ge quantum dots. In particular, this thesis presents modeling and fabrication of quantum dot channel field effect transistors (QDC-FETs) using cladded Ge quantum dots on poly-Si thin films grown on silicon-on-insulator (SOI) substrates. HfAlO2 high-k dielectric layers are used for the gate dielectric. QDC-FETs exhibit multi-state I-V characteristics which enable 2-bit processing, and reduce FET count and power dissipation, and are expected to make a significant impact on the digital circuit design. Germanium quantum dot QDC-FETs provide higher electron mobility than conventional polysilicon FETs, which is comparable to crystalline silicon. Quantum dot channel FETs are also configured as floating gate quantum dot nonvolatile memories (QDC-QDNVMs). In NVMs, we use floating gate comprising of GeOx-Ge quantum dots. QD nonvolatile memories (QD-NVMs) are fabricated on crystalline silicon substrates. HfAlO2 high-k insulator layers are used for both tunnel gate oxide as well as control gate dielectric. QDC-NVMs not only provide significantly higher drain current ID, but also higher threshold voltage shifts (DVTH), and exhibit potential for fabricating multi-bit nonvolatile memories.
Author: Faquir C Jain
Publisher: World Scientific
ISBN: 9813276312
Category : Technology & Engineering
Languages : en
Pages : 150
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Book Description
In this review volume, the editors have included the state-of-the-art research and development in nano composites, and optical electronics written by experts in the field. In addition, it also covers applications for emerging technologies in High-Speed Electronics.In summary, topics covered in this volume includes various aspects of high performance materials and devices for implementing High-Speed Electronic systems.
Author: N. S. Beattie
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Faquir C Jain
Publisher: World Scientific
ISBN: 9811242836
Category : Technology & Engineering
Languages : en
Pages : 210
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Book Description
Published as part of the well-established book series, Selected Topics in Electronics and Systems, this compendium features 18 peer reviewed articles focusing on high-performance materials and emerging devices for implementation in high-speed electronic systems.Wide-ranging topics span from novel materials and devices, biosensors and bio-nano-systems, artificial intelligence, robotics and emerging technologies, to applications in each of these fields.Systems for implementing data with security tokens; single chemical sensor for multi-analyte mixture detection; RF energy harvesters; additively manufactured RF devices for 5G, IoT, RFID and smart city applications are also prominently included.Written by eminent researchers, recent developments also highlight equivalent circuits models at room temperature and 4.2 K; quantum dot nonvolatile memories, 3D-confined quantum dot channel (QDC) and spatial wavefunction switched (SWS) FETs for high-speed multi-bit logic and novel system applications.
Author: Artem Gennadiiovych Shulga
Publisher:
ISBN: 9789403414799
Category :
Languages : en
Pages :
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Book Description
Author: Angsuman Sarkar
Publisher: Elsevier
ISBN: 0323918336
Category : Technology & Engineering
Languages : en
Pages : 550
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Book Description
Approx.528 pagesApprox.528 pages
Author: KUMAR, ARUN
Publisher: PHI Learning Pvt. Ltd.
ISBN: 8120351479
Category : Technology & Engineering
Languages : en
Pages : 530
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Book Description
Introduction to Solid State Physics, in its Second Edition, provides a comprehensive introduction to the physical properties of crystalline solids. It explains the structure of crystals, theory of crystal diffraction and the reciprocal lattice. As the book advances, it describes different kinds of imperfections in crystals, bonding in solids, and vibration in one-dimensional monoatomic and diatomic linear lattice. Different theories of specific heat, thermal conductivity of solids and lattice thermal conductivity are thoroughly dealt with. Coverage also includes the free electron theory, band theory of solids and semiconductors. In addition, the book also describes in detail the magnetic properties of solids and superconductivity. Finally, the book includes discussions on lasers, nanotechnology and the basic principles of fibre optics and holography. Some new topics like cellular method, quantum Hall effect, de Haas van Alphen effect, Pauli paramagnetism and semiconductor laser have been added in the present edition of the book to make it more useful for the students. The book is designed to meet the requirements of undergraduate and postgraduate students of physics for their courses in solid state physics, condensed matter physics and material science. KEY FEATURES • Puts a conceptual emphasis on the subject. • Includes numerous diagrams and figures to clarify the concepts. • Gives step-by-step explanations of theories. • Provides chapter-end exercises to test the knowledge acquired.
