Novel Approach to the Growth and Characterization of Aligned Epitaxial Gallium Nitride Nanowires PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Novel Approach to the Growth and Characterization of Aligned Epitaxial Gallium Nitride Nanowires PDF full book. Access full book title Novel Approach to the Growth and Characterization of Aligned Epitaxial Gallium Nitride Nanowires by Tania Alicia Henry. Download full books in PDF and EPUB format.
Author: Tania Alicia Henry
Publisher:
ISBN:
Category :
Languages : en
Pages : 288
Get Book Here
Book Description
Author: Tania Alicia Henry
Publisher:
ISBN:
Category :
Languages : en
Pages : 288
Get Book Here
Book Description
Author: Adrian Lawrence Holmes
Publisher:
ISBN:
Category :
Languages : en
Pages : 90
Get Book Here
Book Description
Author: Lorelle M. Mansfield
Publisher:
ISBN:
Category : Gallium nitride
Languages : en
Pages : 133
Get Book Here
Book Description
Author: Priti Singh
Publisher:
ISBN:
Category :
Languages : en
Pages : 208
Get Book Here
Book Description
Author: Biemann Alexander Martin
Publisher:
ISBN:
Category :
Languages : en
Pages : 208
Get Book Here
Book Description
Group III-nitrides, and in particular, aluminum nitride (AIN), gallium nitride (GaN), and indium nitride (InN) make up a class of compound semiconductors with direct bandgaps ranging from 1.2 electron volts to 6.2 electron volts (eV). They afford a broad range of applications including light emitting diodes (LED's) and laser diodes (LD's) emitting from the visible to the ultraviolet (UV) portions of the electromagnetic spectrum, radiation detectors, and high power, high frequency electronic devices capable of operating at high temperatures, and in hostile chemical environments. Materials studied in this work were grown on silicon substrates, Si(111) by Molecular Beam Epitaxy (MBE) under a broad range of growth parameters and characterized using X-ray diffraction (XRD), Energy Dispersive Spectroscopy (EDS), Atomic Force Microscopy (AFM), Photoluminescence (PL), and four-point probe resistivity measurements. Growth began with deposition of 0.3 monolayer (ML) of Al on the Si(111)7x7 surface leading to fully passivated Si(111) [root of]3x[root of]3-Al surface. Next, an AIN buffer layer and then the GaN layers were deposited. X-ray measurements indicated growth of single-crystalline hexagonal GaN(001) while PL measurement demonstrated a peak position corresponding to bulk hexagonal-GaN. Sample morphology and resistivity showed a strong dependence on growth conditions. The layer RMS roughness increased with increasing thickness for samples grown with low atomic-nitrogen (N) to molecular N ratio while smoother layers were obtained at the highest atomic N concentrations. Un-intentionally doped layers were n-type. P-type doping was achieved by doping with Mg.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 4
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. 1010 M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.
Author: Michael D. Reed
Publisher:
ISBN:
Category :
Languages : en
Pages : 524
Get Book Here
Book Description
Author: Michael A. Mastro
Publisher:
ISBN:
Category :
Languages : en
Pages : 330
Get Book Here
Book Description
Author: Andrew Phillip Gerger
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
Overgrowth nitride intact, lending itself to the concept of lift-off or pick-and-place. Transfer of GaN onto diamond substrates or other comparable materials would enable the high thermal conductivity and would facilitate the GaN devices to work at higher temperatures and power loads. The substrate transfer could be accomplished after the material growth or after the device fabrication was complete. In this work, the growth and characterization of single crystal MgCaO epitaxial films have been demonstrated. This has been demonstrated on single crystal GaN epifilms grown on sapphire, but SiC can be employed as well, eliminating the underlying GaN epifilm. Oxide thicknesses over 100nm with surface RMS roughness of less than 0.5nm have been achieved and employed as a successful substrate for nitride based overgrowth.
