Nonequilibrium Carrier Dynamics and Gain in Semiconductor Quantum Wells PDF Download
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Author: Philip John Bream
Publisher:
ISBN:
Category : Hot carriers
Languages : en
Pages : 822
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Book Description
Author: Philip John Bream
Publisher:
ISBN:
Category : Hot carriers
Languages : en
Pages : 822
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Book Description
Author: Kong-Thon Tsen
Publisher: CRC Press
ISBN: 1420027255
Category : Technology & Engineering
Languages : en
Pages : 272
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Book Description
The advent of the femto-second laser has enabled us to observe phenomena at the atomic timescale. One area to reap enormous benefits from this ability is ultrafast dynamics. Collecting the works of leading experts from around the globe, Non-Equilibrium Dynamics of Semiconductors and Nanostructures surveys recent developments in a variety of areas in ultrafast dynamics. In eight authoritative chapters illustrated by more than 150 figures, this book spans a broad range of new techniques and advances. It begins with a review of spin dynamics in a high-mobility two-dimensional electron gas, followed by the generation, propagation, and nonlinear properties of high-amplitude, ultrashort strain solitons in solids. The discussion then turns to nonlinear optical properties of nanoscale artificial dielectrics, optical properties of GaN self-assembled quantum dots, and optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based semiconductors. Rounding out the presentation, the book examines ultrafast non-equilibrium electron dynamics in metal nanoparticles, monochromatic acoustic phonons in GaAs, and electromagnetically induced transparency in semiconductor quantum wells. With its pedagogical approach and practical, up-to-date coverage, Non-Equilibrium Dynamics of Semiconductors and Nanostructures allows you to easily put the material into practice, whether you are a seasoned researcher or new to the field.
Author: Marco Saraniti
Publisher: Springer Science & Business Media
ISBN: 3540365885
Category : Technology & Engineering
Languages : en
Pages : 370
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Book Description
"Nonequilibrium Carrier Dynamics in Semiconductors" is a well-established, specialist conference, held every two years, covering a range of topics of current interest to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum information processing. Papers accepted for publication are selected and peer-reviewed by members of the Program Committee during the conference to ensure both rapid and high-quality processing.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 15
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Book Description
Acoustic phonons in quantum wells and quantum wires and various mechanisms of their interaction with electrons have been investigated. The obtained radiation patterns and spectrums for emitted acoustic phonons show that the thermal energy is radiated preferably in the direction of spatial quantization. The interaction of the electrons with confined acoustic phonons in free-standing quantum wells leads to the electron relaxation times having steps on their dependence on electron energy. The temperature dependence of the electron mobility is similar to that described by the Bloch-Grueeneisen formula. Confined optical phonons in low-dimensional structures were shown to have unusual properties and to substantially affect the electron transport. The effects of phonon pumping and phonon drag in double-well tunneling heterostructure and the effect of transverse pattern formation in vertical tunnel transport in double-barrier heterostructure have been predicted and thoroughly investigated. The threshold-type scattering of electrons by acoustic phonons has been demonstrated to result in streaming of electrons in low electric fields and at low lattice temperatures. Photocurrent and excess current noise in quantum well infrared photo detectors has been investigated. The quantum well recharge under the influence of the nonuniform generated charge carriers drastically changes the dependencies of both photoconductive gain and excess current noise gain upon detector parameters.
Author: Benjamin Lingnau
Publisher: Springer
ISBN: 3319258052
Category : Science
Languages : en
Pages : 203
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Book Description
This thesis sheds light on the unique dynamics of optoelectronic devices based on semiconductor quantum-dots. The complex scattering processes involved in filling the optically active quantum-dot states and the presence of charge-carrier nonequilibrium conditions are identified as sources for the distinct dynamical behavior of quantum-dot based devices. Comprehensive theoretical models, which allow for an accurate description of such devices, are presented and applied to recent experimental observations. The low sensitivity of quantum-dot lasers to optical perturbations is directly attributed to their unique charge-carrier dynamics and amplitude-phase-coupling, which is found not to be accurately described by conventional approaches. The potential of quantum-dot semiconductor optical amplifiers for novel applications such as simultaneous multi-state amplification, ultra-wide wavelength conversion, and coherent pulse shaping is investigated. The scattering mechanisms and the unique electronic structure of semiconductor quantum-dots are found to make such devices prime candidates for the implementation of next-generation optoelectronic applications, which could significantly simplify optical telecommunication networks and open up novel high-speed data transmission schemes.
Author: Ryan R. Cooney
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
Author: M. O. Manasreh
Publisher: CRC Press
ISBN: 9789056995676
Category : Science
Languages : en
Pages : 606
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Book Description
Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study. This volume focuses on the physics, technology and applications of strained layer quantum wells and superlattices, featuring chapters on aspects ranging from theoretical modeling of quantum-well lasers to materials characterization and assessment by the most prominent researchers in the field. It is an essential reference for both researchers and students of semiconductor lasers, sensors and communications.
Author: Masataka Inoue
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Kong-Thon Tsen
Publisher: CRC Press
ISBN: 1351836927
Category : Technology & Engineering
Languages : en
Pages : 241
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Book Description
The advent of the femto-second laser has enabled us to observe phenomena at the atomic timescale. One area to reap enormous benefits from this ability is ultrafast dynamics. Collecting the works of leading experts from around the globe, Non-Equilibrium Dynamics of Semiconductors and Nanostructures surveys recent developments in a variety of areas in ultrafast dynamics. In eight authoritative chapters illustrated by more than 150 figures, this book spans a broad range of new techniques and advances. It begins with a review of spin dynamics in a high-mobility two-dimensional electron gas, followed by the generation, propagation, and nonlinear properties of high-amplitude, ultrashort strain solitons in solids. The discussion then turns to nonlinear optical properties of nanoscale artificial dielectrics, optical properties of GaN self-assembled quantum dots, and optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based semiconductors. Rounding out the presentation, the book examines ultrafast non-equilibrium electron dynamics in metal nanoparticles, monochromatic acoustic phonons in GaAs, and electromagnetically induced transparency in semiconductor quantum wells. With its pedagogical approach and practical, up-to-date coverage, Non-Equilibrium Dynamics of Semiconductors and Nanostructures allows you to easily put the material into practice, whether you are a seasoned researcher or new to the field.
Author: Alexander Shik
Publisher: World Scientific
ISBN: 9814496863
Category : Science
Languages : en
Pages : 106
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Book Description
This invaluable book is devoted to the physics, technology and device applications of semiconductor structures with ultrathin layers where the electronic properties are governed by the quantum-mechanical laws. Such structures called quantum wells or structures with the two-dimensional electron gas, have become one of the most actively investigated objects in modern solid state physics. Electronic properties of quantum wells differ dramatically from those of bulk semiconductors, which allows one to observe new types of physical phenomena, such as the quantum Hall effect and many other so-far-unknown kinetic and optical effects. This, in turn, offers wide opportunities for creating semiconductor devices based on new principles, and it has give birth to the new branch of electronics called nanoelectronics.
