Author: Michael Robert HontzPublisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 120
Book Description
This dissertation investigates the modeling of next generation wide bandgap semiconductors in several domains. The first model developed is of a GaN Schottky diode with a unique AlGaN cap layer. This model is developed using fundamental physical laws and analysis and allows for the characteristics of the diode to be designed by adjusting aspects of the diode's fabrication and structure. The second model is of a lateral GaN HEMT and is developed using TCAD simulation software in order to fit experimental data based on static characteristics. This procedure endeavors to simultaneously fit several output characteristics of the HEMT device to facilitate the applicability and evaluation of the device for power electronics applications. This model is then used to analyze the effects of various substrate material choices on the performance of the GaN HEMT in a switching application. Finally, a link between TCAD models of devices and a circuit simulation platform is demonstrated. This system allows for simulation and testing of devices in complex power electronic systems while maintaining a direct dependence between the system-level performance and the physical parameters of the device. This link between TCAD and circuit simulation is then used to develop an iterative optimization procedure to design a semiconductor device for a particular power electronic application. The work demonstrated here develops procedures to create high-fidelity models of wide bandgap semiconductor devices and enables the purposeful design of devices for their intended application with a high degree of confidence in meeting system requirements. It is through this focusing of device modeling and design, that the rate of technological transfer of next-generation semiconductor devices to power electronics systems can be improved.
