Multiple-quantum-well Waveguide Modulators at 1.3um Wavelength for Analog Fiber-optic Links

Multiple-quantum-well Waveguide Modulators at 1.3um Wavelength for Analog Fiber-optic Links PDF Author: Kwok-Kwong Loi
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ISBN:
Category :
Languages : en
Pages : 376

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Multiple-quantum-well Waveguide Modulators at 1.3um Wavelength for Analog Fiber-optic Links

Multiple-quantum-well Waveguide Modulators at 1.3um Wavelength for Analog Fiber-optic Links PDF Author: Kwok-Kwong Loi
Publisher:
ISBN:
Category :
Languages : en
Pages : 376

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High Linearity Modulation in Quantum Wells for Analog Fiber Optic Links

High Linearity Modulation in Quantum Wells for Analog Fiber Optic Links PDF Author: Paul K. L. Yu
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ISBN:
Category : Fiber optics
Languages : en
Pages : 0

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For many RF photonic applications, low RF insertion loss, large spurious free dynamic range (SH)R) links are needed. This development program demonstrated a high saturation power (46 mW), high RF efficiency ( -17.8 dB) analog semiconductor waveguide modulator based upon Franz-Keldysh Effect (FKE) modulation. This was achieved with 43 mW optical power incident to the modulator. The modulator was operated with a multi-octave SFDR of 106 dB-Hz (2/3), and a single octave SH)R of 124 dB-Hz (4/5). Also introduced is a novel, dual function operation concept for the semiconductor electroabsorption modulator for operating also as an effective photodetector. The photodetector can handle more than 20 mA of photocurrent. The behavior of a waveguide modulator based upon FKE and Quantum Confined Stark Effect to achieve high linearity modulation was also modeled and documented. A first time demonstration of high quality, strain compensated multiple quantum well InGaP/InAsP materials was accomplished. Up to one micrometer thick strained multiple quantum well regions can be grown without degradation in the optical properties of the materials.

High Linearity Modulation in Quantum Wells for Analog Fiber Optic Links

High Linearity Modulation in Quantum Wells for Analog Fiber Optic Links PDF Author: Paul K. L. Yu
Publisher:
ISBN:
Category : Fiber optics
Languages : en
Pages : 33

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Book Description
For many RF photonic applications, low RF insertion loss, large spurious free dynamic range (SH)R) links are needed. This development program demonstrated a high saturation power (46 mW), high RF efficiency ( -17.8 dB) analog semiconductor waveguide modulator based upon Franz-Keldysh Effect (FKE) modulation. This was achieved with 43 mW optical power incident to the modulator. The modulator was operated with a multi-octave SFDR of 106 dB-Hz (2/3), and a single octave SH)R of 124 dB-Hz (4/5). Also introduced is a novel, dual function operation concept for the semiconductor electroabsorption modulator for operating also as an effective photodetector. The photodetector can handle more than 20 mA of photocurrent. The behavior of a waveguide modulator based upon FKE and Quantum Confined Stark Effect to achieve high linearity modulation was also modeled and documented. A first time demonstration of high quality, strain compensated multiple quantum well InGaP/InAsP materials was accomplished. Up to one micrometer thick strained multiple quantum well regions can be grown without degradation in the optical properties of the materials.

Peripheral-coupled-waveguide Multiple Quantum Well Electro-absorption Modulator for High Efficiency, High Spurious Free Dynamic Range and High Frequency RF Fiber-optic Link

Peripheral-coupled-waveguide Multiple Quantum Well Electro-absorption Modulator for High Efficiency, High Spurious Free Dynamic Range and High Frequency RF Fiber-optic Link PDF Author: Yuling Zhuang
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Wide-bandwidth High-efficiency Electroabsorption Modulators for Analog Fiber-optic Links

Wide-bandwidth High-efficiency Electroabsorption Modulators for Analog Fiber-optic Links PDF Author: GuoLiang Li
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ISBN:
Category :
Languages : en
Pages : 410

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Optical Properties of Asymmetric Double Quantum Wells and Optimization for Optical Modulators

Optical Properties of Asymmetric Double Quantum Wells and Optimization for Optical Modulators PDF Author: Dong Kwon Kim
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ISBN:
Category : Electrooptic devices
Languages : en
Pages :

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Optical electroabsorption modulators (EAMs) that utilize quantum wells (QWs) are known to exhibit high modulation sensitivity, which is required for the analog optical fiber link application, compared to other types of optical modulators. QW-EAMs utilize the change of absorption coefficients that depends on the change of electric field across the QW for the optical intensity modulation. This dissertation focuses on the theoretical analysis of the optical properties of asymmetric double QWs (ADQWs) and the systematic optimization of modulation sensitivity in low-voltage EAMs that incorporate ADQWs. In this structure, the accurate calculation of excitons is especially important because the excitonic as well as the band-to-band optical transitions dominate the optical properties at the operating wavelength. The complex linear optical susceptibility was calculated within the density matrix approach in the quasi-equilibrium regime for the low excitation power and through a thorough treatment of line broadening. Transition strengths were calculated in the wavevector space, which effectively includes valence subband mixing with the warping of the subbands, excitonic mixing effects, and possible optical selection rules (e.g., light polarization, spin of excitons). The calculated transmission properties of the waveguide EAMs were almost identical to the experimental data at the device operating bias range. The mixing of excitons in ADQWs was analyzed in detail in momentum space, which was demonstrated to be very important in the process of structural optimization of ADQWs. The optimization of the structural parameters revealed that at an adequate barrier position and well width, the barrier thickness affects the modulation efficiency the most. Subsequently, in InGaAsP-based waveguide type QW-EAMs that operate at 1550 nm, the optimization of only one variable the thickness of the coupling barrier of the ADQWs shows 380 % enhancement in the modulation sensitivity at a much lower bias field (70->35 kV/cm) compared with that of single-QW structures. This enhancement is found to be caused by the strong mixing of the two exciton states originating in different subband pairs.

Electrical & Electronics Abstracts

Electrical & Electronics Abstracts PDF Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2304

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Strained-Layer Mu1tip1e Quantum Well for High Linearity Modulation (AASERT-93).

Strained-Layer Mu1tip1e Quantum Well for High Linearity Modulation (AASERT-93). PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Book Description
We have demonstrated high power, high RF efficiency ( -17.8 dB) analog semiconductor waveguide modulator based upon Franz-Keldysh Effect (FKE) modulation at 1.3 micrometer wavelength. The modulator has been operated with a multi-octave spurious free dynamic range (SFDR) of 106 dB-Hz, and a single octave SFDR of 124 dB-Hz. These results have been found to be independent of frequency, up to 4 GHz. We have studied and designed the waveguide modulator based upon a combination of FKE and Quantum confined Stark Effect (QCSE) for enhancing the link linear dynamic range. We have also demonstrated a dual function analog receive/transmit operation for the semiconductor electroabsorption modulator. We have demonstrated, by adjusting the bias voltage to the waveguide device, it can operate as an effective high saturation photodetector as well as an effective modulator. We have also demonstrated the first high quality strained compensated multiple quantum well InGaP/InAsP materials at both 1.3 and 1.5 micrometer wavelength. Up to one micrometer thick multiple quantum well region can be grown.

Wideband Electroabsorption Modulator for Analog Applications

Wideband Electroabsorption Modulator for Analog Applications PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 23

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There were two main technical objectives of this program with respect to the investigation of the high speed waveguide electroabsorption (EA) modulator, namely: (1) Design and fabrication of a waveguide modulator with a widened optical waveguide for easy packaging and lower insertion loss, and (2) interfacing with Infotonics for their fiber packaging effort of the modulator. In addition, an examination of the limits to Radio Frequency (RF) link gain, noise figure and spurious free dynamic range (SFDR) of the EA modulator was accomplished. This program produced the following accomplishments: 1) Finished a design for the modulator with large optical waveguide to improve the coupling in materials structure of either bulk InGaAsP or multiple quantum wells. The design has been fabricated at UCSD and repeated at a commercial foundry. 2) Examined the limits of RF link gain, noise figure and SFDR of EA modulators.

Wideband Electroabsorption Modulator for Microwave Photonics

Wideband Electroabsorption Modulator for Microwave Photonics PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 15

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The objective of this grant was to determine experimentally the analog performance of the electroabsorption modulator (EAM) in external modulated RF fiber-optic links for radar and signal processing applications. UCSD investigated novel devices and material approaches, as well as novel electrode structures to enhance the RF link gain and spurious free dynamic range of link using the traveling wave electroabsorption modulator over a large bandwidth, operating at a nominal 1.55 um wavelength. In particular, high frequency, high saturation optical power analog Traveling Wave EAM (TW-EAM) waveguide modulators using peripheral coupled waveguide (POW) were investigated and are reported here. An evaluation of the drive voltage of the TW-EAM, as well as the link gain and link SFDR was also accomplished. Finally an investigation of the segmented-electrode traveling wave EAM (STEAM) using a design that separates the optimization of the optical waveguide and the microwave transmission line is documented.