Molecular Beam Epitaxial Growth of Homoepitaxial Zinc Selenide

Molecular Beam Epitaxial Growth of Homoepitaxial Zinc Selenide PDF Author: Minhyon Jeon
Publisher:
ISBN:
Category :
Languages : en
Pages : 422

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Molecular Beam Epitaxial Growth of Homoepitaxial Zinc Selenide

Molecular Beam Epitaxial Growth of Homoepitaxial Zinc Selenide PDF Author: Minhyon Jeon
Publisher:
ISBN:
Category :
Languages : en
Pages : 422

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Book Description


Molecular Beam Epitaxial Growth and Characterisation of ZnSe

Molecular Beam Epitaxial Growth and Characterisation of ZnSe PDF Author: Zhang Yu
Publisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages : 180

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Molecular Beam Epitaxy

Molecular Beam Epitaxy PDF Author: Mohamed Henini
Publisher: Newnes
ISBN: 0123918596
Category : Technology & Engineering
Languages : en
Pages : 745

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Book Description
This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a ‘how to’ on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. Condenses fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community

Doping of Zinc Selenide During Molecular Beam Epitaxial Growth Using Atomic Phosphorus Derived from a Novel Dual Solid-source/gas Source Radio-frequency Cracker Unit

Doping of Zinc Selenide During Molecular Beam Epitaxial Growth Using Atomic Phosphorus Derived from a Novel Dual Solid-source/gas Source Radio-frequency Cracker Unit PDF Author: Lynn C. Calhoun
Publisher:
ISBN:
Category :
Languages : en
Pages : 252

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Molecular Beam Epitaxy

Molecular Beam Epitaxy PDF Author: Robin F.C. Farrow
Publisher: Elsevier
ISBN: 0815518404
Category : Technology & Engineering
Languages : en
Pages : 795

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Book Description
In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.

Molecular Beam Epitaxy Growth and Characterization of ZnO-based Layers and Heterostructures

Molecular Beam Epitaxy Growth and Characterization of ZnO-based Layers and Heterostructures PDF Author: Abdelhamid Abdelrehim Mahmoud Elshaer
Publisher: Cuvillier Verlag
ISBN: 386727701X
Category :
Languages : en
Pages : 143

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In Situ, Real-time Determination of Optimum Growth Conditions Using Cathodoluminescence for the Molecular Beam Epitaxial Growth of Nitrogen-doped P-type Zinc Selenide

In Situ, Real-time Determination of Optimum Growth Conditions Using Cathodoluminescence for the Molecular Beam Epitaxial Growth of Nitrogen-doped P-type Zinc Selenide PDF Author: Lynn C. Calhoun
Publisher:
ISBN:
Category :
Languages : en
Pages : 82

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Growth and Characterization of ZnSe by Metalorganic and Gas Source Molecular Beam Epitaxy

Growth and Characterization of ZnSe by Metalorganic and Gas Source Molecular Beam Epitaxy PDF Author: Christopher Alan Coronado
Publisher:
ISBN:
Category :
Languages : en
Pages : 324

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Growth by Molecular Beam Epitaxy and Electrical Characterization of C1-doped ZnSe/(100)GaAs Epitaxial Layers

Growth by Molecular Beam Epitaxy and Electrical Characterization of C1-doped ZnSe/(100)GaAs Epitaxial Layers PDF Author: Christopher M. Rouleau
Publisher:
ISBN:
Category :
Languages : en
Pages : 144

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Molecular Beam Epitaxy

Molecular Beam Epitaxy PDF Author: Alfred Cho
Publisher: American Institute of Physics
ISBN:
Category : Science
Languages : en
Pages : 602

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Book Description
Market: Materials scientists and graduate students. This volume includes the most significant contributions of world- renowned scientists in the field of Molecular Beam Expitaxy (MBE). MBE is an extremely important technique for growing single crystals by making beams of atoms and molecules strike a crystalline substrate in a vacuum. This technique has found broad applications in modern materials science.