Modeling and Simulation of Negative Bias Temperature Instability PDF Download
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Author: Robert Entner
Publisher:
ISBN: 9783836459976
Category : Field-effect transistors
Languages : en
Pages : 126
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Book Description
Semiconductor process and device simulators are well established tools for the reduction of the development time for semiconductor devices. Nowadays simulation efforts go beyond solving the basic semiconductor device equations. Especially the modeling and simulation of aging processes has tremendously gained in importance. This book gives insight into the topic of semiconductor device simulation and focuses on the modeling of degradation mechanisms. Negative bias temperature instability (NBTI) causes degradation of MOS structures at elevated temperatures and negative gate voltages. An elaborate investigation of literature from the first report to the recent understanding of this degradation mechanism is presented. A comprehensive model is derived, combining research results from different groups and the coupling to the basic semiconductor device equations. The new NBTI model is compared to measurement data and gives excellent results. This book is addressed to researchers in the field of semiconductor process development but also recommended to engineers in IC design to strengthen their understanding for device degradation.
Author: Robert Entner
Publisher:
ISBN: 9783836459976
Category : Field-effect transistors
Languages : en
Pages : 126
Get Book Here
Book Description
Semiconductor process and device simulators are well established tools for the reduction of the development time for semiconductor devices. Nowadays simulation efforts go beyond solving the basic semiconductor device equations. Especially the modeling and simulation of aging processes has tremendously gained in importance. This book gives insight into the topic of semiconductor device simulation and focuses on the modeling of degradation mechanisms. Negative bias temperature instability (NBTI) causes degradation of MOS structures at elevated temperatures and negative gate voltages. An elaborate investigation of literature from the first report to the recent understanding of this degradation mechanism is presented. A comprehensive model is derived, combining research results from different groups and the coupling to the basic semiconductor device equations. The new NBTI model is compared to measurement data and gives excellent results. This book is addressed to researchers in the field of semiconductor process development but also recommended to engineers in IC design to strengthen their understanding for device degradation.
Author: Souvik Mahapatra
Publisher: Springer Nature
ISBN: 9811661200
Category : Technology & Engineering
Languages : en
Pages : 322
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Book Description
This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels. BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and AC stress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency. The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes. Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed.
Author: Tibor Grasser
Publisher: Springer Science & Business Media
ISBN: 1461479096
Category : Technology & Engineering
Languages : en
Pages : 805
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Book Description
This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.
Author: Sudheer Padala
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 64
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Book Description
Negative Bias Temperature Instability (NBTI) is commonly seen in p-channel transistors under negative gate voltages at an elevated temperature. The interface traps, oxide traps and NBTI mechanisms are discussed and their effect on circuit degradation and results are discussed. This thesis focuses on developing a model for simulating impact of NBTI effects at circuit level. The model mimics the effects of degradation caused by the defects. The NBTI model developed in this work is validated and sanity checked by using the simulation data from silvaco and gives excellent results. Furthermore the susceptibility of CMOS circuits such as the CMOS inverter, and a ring oscillator to NBTI is investigated. The results show that the oscillation frequency of a ring oscillator decreases and the SET pulse broadens with the NBTI.
Author: Jyothi Bhaskarr Velamala
Publisher:
ISBN:
Category : Digital electronics
Languages : en
Pages : 122
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Book Description
Negative bias temperature instability (NBTI) is a leading aging mechanism in modern digital and analog circuits. Recent NBTI data exhibits an excessive amount of randomness and fast recovery, which are difficult to be handled by conventional power-law model (tn). Such discrepancies further pose the challenge on long-term reliability prediction under statistical variations and Dynamic Voltage Scaling (DVS) in real circuit operation. To overcome these barriers, the modeling effort in this work (1) practically explains the aging statistics due to randomness in number of traps with log(t) model, accurately predicting the mean and variance shift; (2) proposes cycle-to-cycle model (from the first-principle of trapping) to handle aging under multiple supply voltages, predicting the non-monotonic behavior under DVS (3) presents a long-term model to estimate a tight upper bound of dynamic aging over multiple cycles, and (4) comprehensively validates the new set of aging models with 65nm statistical silicon data. Compared to previous models, the new set of aging models capture the aging variability and the essential role of the recovery phase under DVS, reducing unnecessary guard-banding during the design stage.
Author: Rui Zheng
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 70
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Book Description
Negative bias temperature instability (NBTI) and channel hot carrier (CHC) are important reliability issues impacting analog circuit performance and lifetime. Compact reliability models and efficient simulation methods are essential for circuit level reliability prediction. This work proposes a set of compact models of NBTI and CHC effects for analog and mixed-signal circuit, and a direct prediction method which is different from conventional simulation methods. This method is applied in circuit benchmarks and evaluated. This work helps with improving efficiency and accuracy of circuit aging prediction.
Author: Faiz Ahmad
Publisher: Springer Nature
ISBN: 9819959462
Category :
Languages : en
Pages : 353
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Book Description
Author: Ricardo Reis
Publisher: Springer
ISBN: 1461440785
Category : Technology & Engineering
Languages : en
Pages : 271
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Book Description
This book presents physical understanding, modeling and simulation, on-chip characterization, layout solutions, and design techniques that are effective to enhance the reliability of various circuit units. The authors provide readers with techniques for state of the art and future technologies, ranging from technology modeling, fault detection and analysis, circuit hardening, and reliability management.
Author: Yu Cao
Publisher: Springer Science & Business Media
ISBN: 1461404452
Category : Technology & Engineering
Languages : en
Pages : 186
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Book Description
Predictive Technology Model for Robust Nanoelectronic Design explains many of the technical mysteries behind the Predictive Technology Model (PTM) that has been adopted worldwide in explorative design research. Through physical derivation and technology extrapolation, PTM is the de-factor device model used in electronic design. This work explains the systematic model development and provides a guide to robust design practice in the presence of variability and reliability issues. Having interacted with multiple leading semiconductor companies and university research teams, the author brings a state-of-the-art perspective on technology scaling to this work and shares insights gained in the practices of device modeling.
Author: Souvik Mahapatra
Publisher: Springer
ISBN: 8132225082
Category : Technology & Engineering
Languages : en
Pages : 282
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Book Description
This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.
