Modeling And Parameter Extraction Techniques Of Silicon-based Radio Frequency Devices

Modeling And Parameter Extraction Techniques Of Silicon-based Radio Frequency Devices PDF Author: Ao Zhang
Publisher: World Scientific
ISBN: 9811255377
Category : Technology & Engineering
Languages : en
Pages : 322

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Book Description
This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods.The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.

Modeling And Parameter Extraction Techniques Of Silicon-based Radio Frequency Devices

Modeling And Parameter Extraction Techniques Of Silicon-based Radio Frequency Devices PDF Author: Ao Zhang
Publisher: World Scientific
ISBN: 9811255377
Category : Technology & Engineering
Languages : en
Pages : 322

Get Book Here

Book Description
This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods.The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.

CMOS RF Modeling, Characterization and Applications

CMOS RF Modeling, Characterization and Applications PDF Author: M. Jamal Deen
Publisher: World Scientific
ISBN: 9789810249052
Category : Science
Languages : en
Pages : 426

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Book Description
CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors PDF Author: Farzan Jazaeri
Publisher: Cambridge University Press
ISBN: 1108557538
Category : Technology & Engineering
Languages : en
Pages : 255

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Book Description
The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.

Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits

Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits PDF Author: G.A. Armstrong
Publisher: IET
ISBN: 0863417434
Category : Technology & Engineering
Languages : en
Pages : 457

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Book Description
The first book to deal with a broad spectrum of process and device design, and modeling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-development engineers and scientists involved in microelectronics technology and device design via Technology CAD, and TCAD engineers and developers.

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design PDF Author: Chenming Hu
Publisher: Woodhead Publishing
ISBN: 0081024029
Category : Technology & Engineering
Languages : en
Pages : 260

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Book Description
Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model. - Provides a detailed discussion of the BSIM-IMG model and the industry standard simulation model for FDSOI, all presented by the developers of the model - Explains the complex operation of the FDSOI device and its use of two independent control inputs - Addresses the parameter extraction challenges for those using this model

JJAP

JJAP PDF Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1290

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Book Description


Computational Science - ICCS 2007

Computational Science - ICCS 2007 PDF Author: Yong Shi
Publisher: Springer Science & Business Media
ISBN: 354072589X
Category : Computers
Languages : en
Pages : 1247

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Book Description
Part of a four-volume set, this book constitutes the refereed proceedings of the 7th International Conference on Computational Science, ICCS 2007, held in Beijing, China in May 2007. The papers cover a large volume of topics in computational science and related areas, from multiscale physics to wireless networks, and from graph theory to tools for program development.

Advances in Nanotechnology Research and Application: 2012 Edition

Advances in Nanotechnology Research and Application: 2012 Edition PDF Author:
Publisher: ScholarlyEditions
ISBN: 1464990468
Category : Technology & Engineering
Languages : en
Pages : 14172

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Book Description
Advances in Nanotechnology Research and Application / 2012 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Nanotechnology. The editors have built Advances in Nanotechnology Research and Application / 2012 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Nanotechnology in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Advances in Nanotechnology Research and Application / 2012 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Measurement Techniques for Radio Frequency Nanoelectronics

Measurement Techniques for Radio Frequency Nanoelectronics PDF Author: T. Mitch Wallis
Publisher: Cambridge University Press
ISBN: 1107120683
Category : Science
Languages : en
Pages : 329

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Book Description
Featuring numerous examples linking theoretical concepts with real-world applications, this practical, cross-disciplinary guide will help you understand the fundamentals of radio frequency measurement of nanoscale devices. -- Résumé abrégé du livre.

Proceedings

Proceedings PDF Author:
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 1008

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Book Description