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Author: Maurizio Casalino
Publisher: MDPI
ISBN: 3036500448
Category : Technology & Engineering
Languages : en
Pages : 148
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Book Description
Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications.
Author: Maurizio Casalino
Publisher: MDPI
ISBN: 3036500448
Category : Technology & Engineering
Languages : en
Pages : 148
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Book Description
Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications.
Author: Maurizio Casalino
Publisher:
ISBN: 9783036500454
Category :
Languages : en
Pages : 148
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Book Description
Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications.
Author: Bahram Nabet
Publisher: Woodhead Publishing
ISBN: 0081028768
Category : Science
Languages : en
Pages : 516
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Book Description
Every bit of information that circulates the internet across the globe is a pulse of light, that at some point will need to be converted to an electric signal in order to be processed by the electronic circuitry in our data centers, computers, and cell phones. Photodetectors (PD’s) perform this conversion with ultra high speed and efficiency, in addition to being ubiquitously present in many other devices ranging from the mundane TV remote controls, to ultra high resolution instrumentation used in Laser Interferometer Gravitational Wave Observatory (LIGO) that reach the edge of the universe and measure gravitational waves. The second edition of "Photodetectors" fully updates the popular first edition with updated information covering the state-of-the-art in modern photodetectors. The 2nd edition starts with basic metrology of photodetectors and common figures-of-merit to compare various devices. It follows with chapters that discuss single-photon detection with Avalanche Photodiodes; organic photodetectors that can be inkjet printed; and silicon-germanium PDs popular in burgeoning field of Silicon Photonics. Internationally recognized experts contribute chapters on one-dimensional, nanowire, PDs as well as high speed zero-dimensional, quantum dot, versions that increase the spectral span as well as speed and sensitivity of PDs and can be produced on various substrates. Solar-blind PDs that operate in harsh environments such as deep space, or rocket engines, are reviewed and new devices in GaN technology . Novel Plasmonic PDs, as well as devices which employ micro-plasma of confined charge in order to make devices that overcome speed limitation of transfer of electronic charge, are covered in other chapters. Using different, novel technologies, CMOS compatible devices are described in two chapters, and ultra high speed PDs that use low-temperature-grown GaAs (LT-GaAs) to detect fast THz signals are reviewed in another chapter. Photodetectors used in application areas of Silicon-Photonics and Microwave-Photonics are reviewed in final chapters of this book. All chapters are of a review nature, providing a perspective of the field before concentrating on particular advancements. As such, the book should appeal to a wide audience that ranges from those with general interest in the topic, to practitioners, graduate students and experts who are interested in the state-of-the-art in photodetection. Addresses various photodetector devices from ultra high speed to ultra high sensitivity, capable of operation in harsh environments Considers a range of applications for this important technology, including silicon photonics and photonic integrated circuits Includes discussions of detectors based on reduced dimensional systems such as quantum wells, nanowires, and quantum dots, as well as travelling wave, and plasmonic detectors
Author: Yining Liu
Publisher:
ISBN:
Category : Optical detectors
Languages : en
Pages : 54
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Book Description
Silicon photonics requires the realization of CMOS-compatible infrared detectors for large scale integration. One possible solution for infrared detection in Si is through the use of hyperdoping, where supersaturated solutions of impurities in Si are produced in order to create intermediate bands in between the valence and conduction bands in Si. Sub-band gap photoconductivity was recently demonstrated in a prototype photodetector fabricated from Si hyperdoped with Au, with infrared response at wavelengths as long as 2 μm. The thesis focuses on the design and fabrication of an optical and electrical measurement system for the characterization of prototype photodiode detectors fabricated from Au-hyperdoped material in order to further its development. Measurement of detector response at long wavelengths requires design of an optical system that can deliver long wavelength light to the device and an electrical system that can measure the (possibly small) photocurrent induced in the detector. An optical system was designed and implemented using a purpose-built tungsten halogen lamp and monochromator as the illumination source, with a custom infrared lensed fiber to deliver the light. In order to characterize on-chip devices, a micro-probe station was employed for electrical connectivity. The system measures electrical response by modulating the incident light with an optical chopper and measuring the change in voltage across a series resistor using a lock-in amplifier as the wavelength is changed. The intensity output of the optical system was measured using calibrated photodiodes covering the wavelength range 800-2600 nm. The system showed measureable light over the entire wavelength range. To couple the max amount of IR to the detector, a large NA and core size silica fiber and a small filament, high power light source are considering to substitute into the system. And the ultimately illumination power can be increased by 25 times. This demonstrates that this system can be used to characterize detectors fabricated from Au-hyperdoped Si.
Author: Laura Marie Giovane
Publisher:
ISBN:
Category :
Languages : en
Pages : 264
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Book Description
Author:
Publisher: Woodhead Publishing
ISBN: 1782424687
Category : Science
Languages : en
Pages : 551
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Book Description
Photodetectors: Materials, Devices and Applications discusses the devices that convert light to electrical signals, key components in communication, computation, and imaging systems. In recent years, there has been significant improvement in photodetector performance, and this important book reviews some of the key advances in the field. Part one covers materials, detector types, and devices, and includes discussion of silicon photonics, detectors based on reduced dimensional charge systems, carbon nanotubes, graphene, nanowires, low-temperature grown gallium arsenide, plasmonic, Si photomultiplier tubes, and organic photodetectors, while part two focuses on important applications of photodetectors, including microwave photonics, communications, high-speed single photon detection, THz detection, resonant cavity enhanced photodetection, photo-capacitors and imaging. Reviews materials, detector types and devices Addresses fabrication techniques, and the advantages and limitations and different types of photodetector Considers a range of application for this important technology Includes discussions of silicon photonics, detectors based on reduced dimensional charge systems, carbon nanotubes, graphene, nanowires, and more
Author: Chung-Li Fan
Publisher:
ISBN:
Category :
Languages : en
Pages : 396
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Book Description
Author: C. Di Natale
Publisher: World Scientific
ISBN: 9812776451
Category : Science
Languages : en
Pages : 419
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Book Description
This volume presents a a selection of the papers presented at the 7th Italian Conference on Sensors and Microsystems, covering challenging topics on strategic areas as automotive, bio-sensors, fundamental chemistry for new generation of material for single molecule recognition.
Author: Giovanni De Micheli
Publisher: Springer
ISBN: 0387749098
Category : Computers
Languages : en
Pages : 397
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Book Description
This book contains extended and revised versions of the best papers presented during the fourteenth IFIP TC 10/WG 10.5 International Conference on Very Large Scale Integration. This conference provides a forum to exchange ideas and show industrial and academic research results in microelectronics design. The current trend toward increasing chip integration and technology process advancements brings about stimulating new challenges both at the physical and system-design levels.
Author: Abbas Afkhami
Publisher: Elsevier
ISBN: 0323972373
Category : Science
Languages : en
Pages : 391
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Book Description
Analytical Nanochemistry provides readers with a comprehensive review of the application of nanomaterial in analytical chemistry. It explains the fundamental concepts involved in utilizing nanomaterials including their classification, synthesis, functionalization, characterization methods, separation, and isolation techniques, as well as toxicity. It also covers fundamental information on different aspects of analytical procedures and method development. Furthermore, it emphasizes micro- and nano-enabled analytical devices and instruments as well as nanotools for nanoanalysis. The book opens with a section on fundamentals (Section 1), then continues with a section on the role of nanomaterials in analytical procedures (Section 2), including sample preparation, separation, and detection. The third section (Section 3) includes chapters on micro- and nano-enabled devices, as most miniaturized microsystems include nanofeatures. The book concludes with a fourth section (Section 4) on future perspectives, covering nanoanalysis, bioanalysis, toxic risks, and limitations of both technology and commercialization. This book serves as a valuable resource for students, instructors, and researchers in analytical chemistry, nanomaterials, and nanotechnology investigating the use of nanotechnology in their analytical procedures. Covers the synthesis methods, functionalization process, and characterization methods of nanomaterials Uses numerous visual elements to illustrate key points, including flowcharts, process diagrams, photographs, and visual schemes Presents fundamental concepts and updated hot topics such as miniaturization in analytical chemistry, nanotools for nano-analysis, micro total analysis systems, and lab-on-a-chip
