Many-body Contributions to Spin Relaxation in Semiconductors PDF Download
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Author: Matthew D. Mower
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 113
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Book Description
Spintronics has the potential to play a significant role in future electronic devices. The success of the field hinges on our ability to maintain and propagate spin signals over various length scales and periods of time. Common to all devices designed to carry spin signals is a need to hold the spin orientation of constituent particles, individually or in bulk. Spin relaxation is a measure of how long particle spins remain polarized while subjected to both spin-dependent and spin-independent interactions. An effect typically driven by the spin-orbit interaction in semiconductors, spin relaxation describes the rate at which spin polarized particles return to an equilibrium spin distribution. This is generally in competition with the goals of spintronic devices which generate out-of-equilibrium spin populations to represent signals. By studying the various mechanisms of spin relaxation in different systems, we learn which materials are appropriate for specific applications and get hints about how to minimize signal loss. This report focuses largely on Dyakonov-Perel spin relaxation of carriers in III-V semiconductors. Of the spin relaxation mechanisms in III-V semiconductors, Dyakonov-Perel often dominates or is at least a primary contributor. We study the mechanism in detail for both non-magnetic and dilute magnetic semiconductors, deriving analytic expressions that include contributions from many-body interactions. The results shed light on the validity of commonly made approximations in calculating spin relaxation for various systems. More importantly, we show how spin relaxation can affect other physical observables, such as spin diffusion. By investigating this spin relaxation mechanism in a dilute magnetic semiconductor, we include the effects of spin-dependent interactions. These interactions result in some peculiarities of spin relaxation for carriers undergoing a ferromagnetic transition.
Author: Matthew D. Mower
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 113
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Book Description
Spintronics has the potential to play a significant role in future electronic devices. The success of the field hinges on our ability to maintain and propagate spin signals over various length scales and periods of time. Common to all devices designed to carry spin signals is a need to hold the spin orientation of constituent particles, individually or in bulk. Spin relaxation is a measure of how long particle spins remain polarized while subjected to both spin-dependent and spin-independent interactions. An effect typically driven by the spin-orbit interaction in semiconductors, spin relaxation describes the rate at which spin polarized particles return to an equilibrium spin distribution. This is generally in competition with the goals of spintronic devices which generate out-of-equilibrium spin populations to represent signals. By studying the various mechanisms of spin relaxation in different systems, we learn which materials are appropriate for specific applications and get hints about how to minimize signal loss. This report focuses largely on Dyakonov-Perel spin relaxation of carriers in III-V semiconductors. Of the spin relaxation mechanisms in III-V semiconductors, Dyakonov-Perel often dominates or is at least a primary contributor. We study the mechanism in detail for both non-magnetic and dilute magnetic semiconductors, deriving analytic expressions that include contributions from many-body interactions. The results shed light on the validity of commonly made approximations in calculating spin relaxation for various systems. More importantly, we show how spin relaxation can affect other physical observables, such as spin diffusion. By investigating this spin relaxation mechanism in a dilute magnetic semiconductor, we include the effects of spin-dependent interactions. These interactions result in some peculiarities of spin relaxation for carriers undergoing a ferromagnetic transition.
Author: Mikhail I. Dyakonov
Publisher: Springer Science & Business Media
ISBN: 3540788204
Category : Science
Languages : en
Pages : 451
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Book Description
The purpose of this collective book is to present a non-exhaustive survey of sp- related phenomena in semiconductors with a focus on recent research. In some sense it may be regarded as an updated version of theOpticalOrientation book, which was entirely devoted to spin physics in bulk semiconductors. During the 24 years that have elapsed, we have witnessed, on the one hand, an extraordinary development in the wonderful semiconductor physics in two dim- sions with the accompanying revolutionary applications. On the other hand, during the last maybe 15 years there was a strong revival in the interest in spin phen- ena, in particular in low-dimensional semiconductor structures. While in the 1970s and 1980s the entire world population of researchers in the ?eld never exceeded 20 persons, now it can be counted by the hundreds and the number of publications by the thousands. This explosive growth is stimulated, to a large extent, by the hopes that the electron and/or nuclear spins in a semiconductor will help to accomplish the dream of factorizing large numbers by quantum computing and eventually to develop a new spin-based electronics, or “spintronics”. Whether any of this will happen or not, still remains to be seen. Anyway, these ideas have resulted in a large body of interesting and exciting research, which is a good thing by itself. The ?eld of spin physics in semiconductors is extremely rich and interesting with many spectacular effects in optics and transport.
Author: Mikhail I. Dyakonov
Publisher: Springer
ISBN: 9783642097621
Category : Science
Languages : en
Pages : 0
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Book Description
The purpose of this collective book is to present a non-exhaustive survey of sp- related phenomena in semiconductors with a focus on recent research. In some sense it may be regarded as an updated version of theOpticalOrientation book, which was entirely devoted to spin physics in bulk semiconductors. During the 24 years that have elapsed, we have witnessed, on the one hand, an extraordinary development in the wonderful semiconductor physics in two dim- sions with the accompanying revolutionary applications. On the other hand, during the last maybe 15 years there was a strong revival in the interest in spin phen- ena, in particular in low-dimensional semiconductor structures. While in the 1970s and 1980s the entire world population of researchers in the ?eld never exceeded 20 persons, now it can be counted by the hundreds and the number of publications by the thousands. This explosive growth is stimulated, to a large extent, by the hopes that the electron and/or nuclear spins in a semiconductor will help to accomplish the dream of factorizing large numbers by quantum computing and eventually to develop a new spin-based electronics, or “spintronics”. Whether any of this will happen or not, still remains to be seen. Anyway, these ideas have resulted in a large body of interesting and exciting research, which is a good thing by itself. The ?eld of spin physics in semiconductors is extremely rich and interesting with many spectacular effects in optics and transport.
Author: M. M. Glazov
Publisher: Oxford University Press
ISBN: 0192534211
Category : Science
Languages : en
Pages : 320
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Book Description
In recent years, the physics community has experienced a revival of interest in spin effects in solid state systems. On one hand, the solid state systems, particularly, semiconductors and semiconductor nanosystems, allow us to perform benchtop studies of quantum and relativistic phenomena. On the other hand, this interest is supported by the prospects of realizing spin-based electronics, where the electron or nuclear spins may play a role of quantum or classical information carriers. This book looks in detail at the physics of interacting systems of electron and nuclear spins in semiconductors, with particular emphasis on low-dimensional structures. These two spin systems naturally appear in practically all widespread semiconductor compounds. The hyperfine interaction of the charge carriers and nuclear spins is particularly prominent in nanosystems due to the localization of the charge carriers, and gives rise to spin exchange between these two systems and a whole range of beautiful and complex physics of manybody and nonlinear systems. As a result, understanding of the intertwined spin systems of electrons and nuclei is crucial for in-depth studying and controlling the spin phenomena in semiconductors. The book addresses a number of the most prominent effects taking place in semiconductor nanosystems including hyperfine interaction, nuclear magnetic resonance, dynamical nuclear polarization, spin-Faraday and spin-Kerr effects, processes of electron spin decoherence and relaxation, effects of electron spin precession mode-locking and frequency focussing, as well as fluctuations of electron and nuclear spins.
Author: Kong-Thon Tsen
Publisher: Springer Science & Business Media
ISBN: 146130203X
Category : Technology & Engineering
Languages : en
Pages : 513
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Book Description
There are many books in the market devoted to the review of certain fields. This book is different from those in that authors not only provide reviews of the fields but also present their own important contributions to the fields in a tutorial way. As a result, researchers who are already in the field of ultrafast dynamics in semicon ductors and its device applications as well as researchers and graduate students just entering the field will benefit from it. This book is made up of recent new developments in the field of ultrafast dynamics in semiconductors. It consists of nine chapters. Chapter 1 reviews a mi croscopic many-body theory which allows one to compute the linear and non-linear optical properties of semiconductor superlattices in the presence of homogeneous electric fields. Chapter 2 deals with ultrafast intersubband dynamics in quantum wells and device structures. Chapter 3 is devoted to Bloch oscillations in semicon ductors and their applications. Chapter 4 discusses transient electron transport phe nomena, such as electron ballistic transport and electron velocity overshoot phe nomena as well as non-equilibrium phonon dynamics in nanostructure semicon ductors. Chapter 5 reviews experimental and theoretical work on the use of the phase properties of one or more ultrashort optical pulses to generate and control electrical currents in semiconductors.
Author: Jagdeep Shah
Publisher: Springer Science & Business Media
ISBN: 366203770X
Category : Science
Languages : en
Pages : 536
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Book Description
Ultrafast spectroscopy of semiconductors and semiconductor nanostructures is currently one of the most exciting areas of research in condensed-matter physics. Remarkable recent progress in the generation of tunable femtosecond pulses has allowed direct investigation of the most fundamental dynamical processes in semiconductors. This second edition presents the most striking recent advances in the techniques of ultrashort pulse generation and ultrafast spectroscopy; it discusses the physics of relaxation, tunneling and transport dynamics in semiconductors and semiconductor nanostructures following excitation by femtosecond laser pulses.
Author: Lan Qing
Publisher:
ISBN:
Category :
Languages : en
Pages : 141
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Book Description
"Spin transport in semiconductors is of fundamental research interest not only for addressing basic solid state physics aspects, but also for the already demonstrated potential it has in electronic and storage technologies. The centerpiece of spin-dependent transport focuses on the spin relaxation. So far, spin lifetimes deduced from many spin transport measurements indicate certain discrepancies with the theoretical values developed from intrinsic electron-phonon interactions in equilibrium. Detailed investigation for each of the experiments is needed in order to fill the gap, and here we show how these spin transports in semiconductors can be manipulated by extrinsic factors, such as external field, doping-induced exchange, and device structure. The comprehensive consideration of all these influences results in a consistent agreement between theory and experiment, as well as a transparent physical picture. Electric fields can drive electrons away from thermal equilibrium and substantially enhance the dominant spin relaxation mechanism in silicon and germanium. Empirical results from spin transport devices with ballistic injection confirms our theory for such strong spin depolarization. It enables the optimization of spintronics devices, as we can choose the electric field that optimizes the tradeoff between fast transport across the device and signal loss due to spin depolarization. The scenario is more promising when applying strainches Meanwhile, at low temperatures conduction electrons accelerated by electric fields can also excite the localized electrons frozen at the doped impurities via inelastic scattering. Promotion into highly spin-mixed localized states leads to spin depolarization that couples strongly to the conduction electrons by exchange interaction. This novel spin relaxation mechanism is a key ingredient when one tries to model the anomalous behaviors observed at low temperatures. The exchange between conduction and localized electrons can play an important role as well in electrical Hanle effect measurement. A unique Lorentzian-shaped signal is discovered in both theory and experiment. Its shape does not directly relate to spin relaxation as commonly believed. This effect together with the briefly discussed impurity-assisted tunneling magnetoresistance elucidates the reliability of the spin lifetime extracted from a three-terminal device geometry. The spin dynamics with extrinsic factors developed in this thesis possesses broad applications. We show two practical cases in optical orientation that exhibit an outlook beyond spin transport. The examined evolutions of hot electrons and the corresponding spin properties reveal the underlying physics of crystal symmetry and band structures. The method can be further utilized to complete the picture of spin relaxation in semiconductors, and to analyze the extrinsic spin Hall effect"--Pages viii-ix.
Author: Massimo Rudan
Publisher: Springer Nature
ISBN: 3030798275
Category : Technology & Engineering
Languages : en
Pages : 1680
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Book Description
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Author: Pingyue Song
Publisher:
ISBN:
Category :
Languages : en
Pages : 70
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Book Description
Author: Charis Reith
Publisher:
ISBN:
Category : Electron paramagnetic resonance
Languages : en
Pages : 0
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Book Description
