Scientific and Technical Aerospace Reports PDF Download
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Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
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Book Description
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
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Book Description
Author: Gordon Davies
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 572
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Book Description
Author: M.O. Manasreh
Publisher: Elsevier
ISBN: 0080534449
Category : Science
Languages : en
Pages : 463
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Book Description
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Author:
Publisher: Academic Press
ISBN: 0080577237
Category : Computers
Languages : en
Pages : 429
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Book Description
Advances in Electronics and Electron Physics
Author:
Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 1326
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Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 632
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Book Description
Author: Bernard Pajot
Publisher: Springer Science & Business Media
ISBN: 3642180183
Category : Science
Languages : en
Pages : 532
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Book Description
This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.
Author: David J. Vaughan
Publisher: Walter de Gruyter GmbH & Co KG
ISBN: 1501509497
Category : Science
Languages : en
Pages : 728
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Book Description
Volume 61 of Reviews in Mineralogy and Geochemistry presents an up-to-date review of sulfide mineralogy and geochemistry. The crystal structures, electrical and magnetic properties, spectroscopic studies, chemical bonding, thermochemistry, phase relations, solution chemistry, surface structure and chemistry, hydrothermal precipitation processes, sulfur isotope geochemistry and geobiology of metal sulfides are reviewed. Where it is appropriate for comparison, there is brief discussion of the selenide or telluride analogs of the metal sulfides. When discussing crystal structures and structural relationships, the sulfosalt minerals as well as the sulfides are considered in some detail.
Author: Subhash Mahajan
Publisher: North Holland
ISBN:
Category : Science
Languages : en
Pages : 628
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Book Description
Author: K. A. Kikoin
Publisher: World Scientific
ISBN: 9789810218836
Category : Technology & Engineering
Languages : en
Pages : 368
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Book Description
This book discusses the theory of the electron states of transition metal impurities in semiconductors in connection with the general theory of isoelectronic impurities. It contains brief descriptions of the experimental data available for transition metal impurities belonging to iron, palladium and platinum groups and for rare-earth impurities in elemental semiconductors (III-IV, II-VI and IV-VI compounds) and in several oxide compounds (Ti2, BaTiO3, SrTiO3). Also included are applications of the theory to the optical, electrical and resonance properties of semiconductors doped by the transition metal impurities.The book presents a theory unifying previously proposed ligand-field and band descriptions of transition metal impurities. It describes the theory in the context of the general theory of neutral impurities in semiconductors and demonstrates the capabilities of this description to explain the basic experimental properties of semiconductors doped by transition metal impurities. A detailed discussion of various experimental results and their theoretical interpretation is carried out.This book comprises three parts. The first two parts consider several exactly solvable models and describe numerical techniques. All the models and simulations constitute a general pattern describing transition metal and rare-earth impurities in semiconductors. The final part uses this theory in order to address various experimentally observed properties of these systems.
