Luminescence and Gain in Co-Sputtered Al2O3 Erbium-Doped Waveguides PDF Download

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Book Description
Rare earth doping of planar waveguides may potentially yield very compact optical amplifiers, lasers, and amplified spontaneous emission light sources, as well as zero insertion loss waveguide routers, splitters, and multiplexers. Among the most developed to date are Er doped devices which emit at around 1530nm and can be pumped efficiently at 980 or 1480 nm. Interest in these devices has inspired a great deal of research into Erbium-doped thin film and bulk materials. Presently, active devices have been fabricated from silica-based 1, crystalline LiNbO3 2, and sputtered Al2O3 dielectric films 3, to name just a few. Typically, incorporation of the Erbium is accomplished through ion implantation, indiffusion, or by sputtering from preconstituted targets. While ion implantation provides good control of the dopant profile, a high temperature (approx. 800 C) anneal is required to activate the Erbium ions and remove the damage to the host material caused by the high energy ion bombardment. Diffusion also is a high temperature process, and may require in excess of 100 hours to achieve several microns penetration into the host material. Sputtering from preconstituted targets provides excellent compositional control, yet can be expensive as a new target is required for each experimental run.