Silicon Front-end Junction Formation Technologies PDF Download
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Author: Daniel F. Downey
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 336
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Book Description
Unlike the previous three volumes in the series on silicon front-end processing, this volume expands its focus to include more topics related to formation of ultrashallow junctions. With the challenges presented by the requirements of the sub- 100nm node, the need for new activation technologies which yield minimal diffusion of the dopant while producing high activation are paramount. In addition, the metrology required to measure these shallow profiles in both one and two dimensions becomes more critical. The volume attempts to address these new requirements and potential solutions by covering a variety of topics that include: alternate annealing technologies; device engineering options; dopant activation; epitaxial techniques primarily employing SiGe; defect and diffusion models; characterization using surface analysis techniques; and characterization technologies.
Author: Daniel F. Downey
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 336
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Book Description
Unlike the previous three volumes in the series on silicon front-end processing, this volume expands its focus to include more topics related to formation of ultrashallow junctions. With the challenges presented by the requirements of the sub- 100nm node, the need for new activation technologies which yield minimal diffusion of the dopant while producing high activation are paramount. In addition, the metrology required to measure these shallow profiles in both one and two dimensions becomes more critical. The volume attempts to address these new requirements and potential solutions by covering a variety of topics that include: alternate annealing technologies; device engineering options; dopant activation; epitaxial techniques primarily employing SiGe; defect and diffusion models; characterization using surface analysis techniques; and characterization technologies.
Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 816
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Book Description
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 820
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Book Description
Author: Niccolò Rinaldi
Publisher: River Publishers
ISBN: 8793519613
Category : Technology & Engineering
Languages : en
Pages : 378
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Book Description
The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Author: Guilei Wang
Publisher: Springer Nature
ISBN: 9811500460
Category : Technology & Engineering
Languages : en
Pages : 127
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Book Description
This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.
Author: Cheol Seong Hwang
Publisher: Springer Science & Business Media
ISBN: 146148054X
Category : Science
Languages : en
Pages : 266
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Book Description
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Author: Stephen A. Campbell
Publisher: OUP USA
ISBN: 9780195320176
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
Designed for advanced undergraduate or first-year graduate courses in semiconductor or microelectronic fabrication, the third edition of Fabrication Engineering at the Micro and Nanoscale provides a thorough and accessible introduction to all fields of micro and nano fabrication.
Author: Serge Oktyabrsky
Publisher: Springer Science & Business Media
ISBN: 1441915478
Category : Technology & Engineering
Languages : en
Pages : 451
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Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author: Tsunenobu Kimoto
Publisher: John Wiley & Sons
ISBN: 1118313526
Category : Technology & Engineering
Languages : en
Pages : 565
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Book Description
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author: Richard S. Muller
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 560
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Book Description
This Second Edition provides all the required information for a course in modern device electronics taken by undergraduate electrical engineers. Offers major new coverage of silicon technology, adds several topics in basic semiconductor physics not treated previously, and introduces Hall-effect sensors. The chapters on MOSFET have been entirely updated, focusing on mobility variations and threshold-voltage dependence. Additional topics include VLSI devices, short channel effects, and computer modeling.
