Author: James Augustin Hedberg
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Low Temperature Force Microscopy on a Deeply Embedded Two Dimensional Electron Gas
Author: James Augustin Hedberg
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
JJAP
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1450
Book Description
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1450
Book Description
Chemical Abstracts
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2002
Book Description
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2002
Book Description
Physics Briefs
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1224
Book Description
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1224
Book Description
American Doctoral Dissertations
Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 816
Book Description
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 816
Book Description
Indium Nitride and Related Alloys
Author: Timothy David Veal
Publisher: CRC Press
ISBN: 1439859612
Category : Technology & Engineering
Languages : en
Pages : 707
Book Description
Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.
Publisher: CRC Press
ISBN: 1439859612
Category : Technology & Engineering
Languages : en
Pages : 707
Book Description
Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.
Ceramic Abstracts
Author:
Publisher:
ISBN:
Category : Ceramics
Languages : en
Pages : 500
Book Description
Publisher:
ISBN:
Category : Ceramics
Languages : en
Pages : 500
Book Description
Electrical & Electronics Abstracts
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1948
Book Description
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1948
Book Description
IEEE International Reliability Physics Symposium Proceedings
Author: International Reliability Physics Symposium
Publisher:
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 492
Book Description
Publisher:
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 492
Book Description
Dissertation Abstracts International
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 788
Book Description
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 788
Book Description