Author: P. E. Lindelof
Publisher:
ISBN:
Category :
Languages : en
Pages : 9
Book Description
Localization and Interaction Effects in GaAs
Author: P. E. Lindelof
Publisher:
ISBN:
Category :
Languages : en
Pages : 9
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 9
Book Description
Localization and Interaction Effects in GaAs/AlGaAs Heterostructures Modified by ↑4He-ion Implantation
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Energy Research Abstracts
Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 548
Book Description
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 548
Book Description
Localization and Metal-Insulator Transitions
Author: Hellmut Fritzche
Publisher: Springer Science & Business Media
ISBN: 146132517X
Category : Science
Languages : en
Pages : 529
Book Description
This volume and its two companion volumes, entitled Tetrahedrally-Bonded Amorphous Semiconductors and Physics of Disordered Materials, are our way of paying special tribute to Sir Nevill Mott and to express our heartfelt wishes to him on the occasion of his eightieth birthday. Sir Nevill has set the highest standards as a physicist, teacher, and scientific leader. Our feelings for him include not only the respect and admiration due a great scientist, but also a deep affection for a great human being, who possesses a rare combination of outstanding personal qualities. We thank him for enriching our lives, and we shall forever carry cherished memories of this noble man. Scientists best express their thanks by contributing their thoughts and observations to a Festschrift. This one honoring Sir Nevill fills three volumes, with literally hundreds of authors meeting a strict deadline. The fact that contributions poured in from all parts of the world attests to the international cohesion of our scientific community. It is a tribute to Sir Nevill's stand for peace and understanding, transcending national borders. The editors wish to express their gratitude to Ghazaleh Koefod for her diligence and expertise in deciphering and typing many of the papers, as well as helping in numerous other ways. The blame for the errors that remain belongs to the editors.
Publisher: Springer Science & Business Media
ISBN: 146132517X
Category : Science
Languages : en
Pages : 529
Book Description
This volume and its two companion volumes, entitled Tetrahedrally-Bonded Amorphous Semiconductors and Physics of Disordered Materials, are our way of paying special tribute to Sir Nevill Mott and to express our heartfelt wishes to him on the occasion of his eightieth birthday. Sir Nevill has set the highest standards as a physicist, teacher, and scientific leader. Our feelings for him include not only the respect and admiration due a great scientist, but also a deep affection for a great human being, who possesses a rare combination of outstanding personal qualities. We thank him for enriching our lives, and we shall forever carry cherished memories of this noble man. Scientists best express their thanks by contributing their thoughts and observations to a Festschrift. This one honoring Sir Nevill fills three volumes, with literally hundreds of authors meeting a strict deadline. The fact that contributions poured in from all parts of the world attests to the international cohesion of our scientific community. It is a tribute to Sir Nevill's stand for peace and understanding, transcending national borders. The editors wish to express their gratitude to Ghazaleh Koefod for her diligence and expertise in deciphering and typing many of the papers, as well as helping in numerous other ways. The blame for the errors that remain belongs to the editors.
Localization, Interaction, and Transport Phenomena
Author: Bernhard Kramer
Publisher: Springer Science & Business Media
ISBN: 3642825168
Category : Technology & Engineering
Languages : en
Pages : 273
Book Description
When we first had the idea of organizing the International Conference on Localization, Interaction, and Transport Phenomena in Impure Metals we expected to bring together at most a hundred physicists. The fact that more than a hundred and fifty participated clearly shows that the topic of the meeting was of great interest to an important fraction of the solid state physics community. In fact, remembering that the localization problem is already a quarter of a century old, it is quite amazing to see how, during the last five years, new and very successful theoretical models emerged which were confirmed by sometimes ingenious experiments. The number of groups involved in the study of localization or related problems in the transport properties of matter even seems to be increasing. The main purpose of this conference was to review the present status of activities in the localization field and hopefully to stimulate new ideas. A study of the Conference Proceedings ascertains that we were successful in reaching these two goals. Moreover, the presence of the authors of the about ninety contributed papers published in the supplement volume assured the very lively atmosphere which characterizes successful conferences. We think that this was the most important ingredient for achieving the second goal in particular. We thank our sponsors for their support, which was given unreluctantly and generously. Especially, we gratefully acknowledge the hospitality of the PTB and the city of Braunschweig during the time of the meeting.
Publisher: Springer Science & Business Media
ISBN: 3642825168
Category : Technology & Engineering
Languages : en
Pages : 273
Book Description
When we first had the idea of organizing the International Conference on Localization, Interaction, and Transport Phenomena in Impure Metals we expected to bring together at most a hundred physicists. The fact that more than a hundred and fifty participated clearly shows that the topic of the meeting was of great interest to an important fraction of the solid state physics community. In fact, remembering that the localization problem is already a quarter of a century old, it is quite amazing to see how, during the last five years, new and very successful theoretical models emerged which were confirmed by sometimes ingenious experiments. The number of groups involved in the study of localization or related problems in the transport properties of matter even seems to be increasing. The main purpose of this conference was to review the present status of activities in the localization field and hopefully to stimulate new ideas. A study of the Conference Proceedings ascertains that we were successful in reaching these two goals. Moreover, the presence of the authors of the about ninety contributed papers published in the supplement volume assured the very lively atmosphere which characterizes successful conferences. We think that this was the most important ingredient for achieving the second goal in particular. We thank our sponsors for their support, which was given unreluctantly and generously. Especially, we gratefully acknowledge the hospitality of the PTB and the city of Braunschweig during the time of the meeting.
Localisation and Interaction
Author: D.M. Finlayson
Publisher: CRC Press
ISBN: 9780905945149
Category : Science
Languages : en
Pages : 438
Book Description
Localisation and Interaction covers the scaling theory of localization metal-insulator transitions, two-dimensional systems, interaction effects in impure metals, weak localization, critical point measurement, quantum wells, integer quantum Hall effects, magnetic field induced transitions, static and dynamic magnetic probes, band gap narrowing, and an experiment with the quantum Hall effects.
Publisher: CRC Press
ISBN: 9780905945149
Category : Science
Languages : en
Pages : 438
Book Description
Localisation and Interaction covers the scaling theory of localization metal-insulator transitions, two-dimensional systems, interaction effects in impure metals, weak localization, critical point measurement, quantum wells, integer quantum Hall effects, magnetic field induced transitions, static and dynamic magnetic probes, band gap narrowing, and an experiment with the quantum Hall effects.
Electron-Electron Interactions in Disordered Systems
Author: A.L. Efros
Publisher: Elsevier
ISBN: 044460099X
Category : Science
Languages : en
Pages : 703
Book Description
``Electron-Electron Interactions in Disordered Systems'' deals with the interplay of disorder and the Coulomb interaction. Prominent experts give state-of-the-art reviews of the theoretical and experimental work in this field and make it clear that the interplay of the two effects is essential, especially in low-dimensional systems.
Publisher: Elsevier
ISBN: 044460099X
Category : Science
Languages : en
Pages : 703
Book Description
``Electron-Electron Interactions in Disordered Systems'' deals with the interplay of disorder and the Coulomb interaction. Prominent experts give state-of-the-art reviews of the theoretical and experimental work in this field and make it clear that the interplay of the two effects is essential, especially in low-dimensional systems.
Physics Briefs
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1420
Book Description
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1420
Book Description
Electronic Quantum Transport in Mesoscopic Semiconductor Structures
Author: Thomas Ihn
Publisher: Springer Science & Business Media
ISBN: 0387400966
Category : Science
Languages : en
Pages : 267
Book Description
Opening with a brief historical account of electron transport from Ohm's law through transport in semiconductor nanostructures, this book discusses topics related to electronic quantum transport. The book is written for graduate students and researchers in the field of mesoscopic semiconductors or in semiconductor nanostructures. Highlights include review of the cryogenic scanning probe techniques applied to semiconductor nanostructures.
Publisher: Springer Science & Business Media
ISBN: 0387400966
Category : Science
Languages : en
Pages : 267
Book Description
Opening with a brief historical account of electron transport from Ohm's law through transport in semiconductor nanostructures, this book discusses topics related to electronic quantum transport. The book is written for graduate students and researchers in the field of mesoscopic semiconductors or in semiconductor nanostructures. Highlights include review of the cryogenic scanning probe techniques applied to semiconductor nanostructures.
Physics Of Semiconductors, The - Proceedings Of The 22nd International Conference (In 3 Volumes)
Author: David J Lockwood
Publisher: World Scientific
ISBN: 9814550159
Category :
Languages : en
Pages : 2858
Book Description
These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.
Publisher: World Scientific
ISBN: 9814550159
Category :
Languages : en
Pages : 2858
Book Description
These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.