Kinetic Studies of Growth of Si and SiGe Thin Films PDF Download
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Author: Yongjun Zheng
Publisher:
ISBN:
Category :
Languages : en
Pages : 562
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Book Description
Author: Yongjun Zheng
Publisher:
ISBN:
Category :
Languages : en
Pages : 562
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Book Description
Author: Tue Thanh Ngo
Publisher:
ISBN:
Category :
Languages : en
Pages : 320
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Book Description
Author: Francesco Cino Matacotta
Publisher: World Scientific
ISBN: 9814500747
Category : Technology & Engineering
Languages : en
Pages : 369
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Book Description
This book brings together detailed discussions by leading experts on the various innovative aspects of thin films growth, deposition and characterization techniques, and new thin film materials and devices. It addresses through the different viewpoints of the contributors, the major problem of thin films science - the relation between the energy of the condensing species and the resulting properties of the films. Some of the issues considered include energetic condensation, bombardment stabilization, pulsed electron beam ablation, orientation and self-organization of organic, ferroelectric and nanoparticle thin films. Several chapters focus on applications such as the recent developments in organic optoelectronics, large area electronic technology and superconducting thin film devices.
Author: Guilei Wang
Publisher: Springer Nature
ISBN: 9811500460
Category : Technology & Engineering
Languages : en
Pages : 115
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Book Description
This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.
Author: John James Lees
Publisher:
ISBN:
Category :
Languages : en
Pages : 318
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Book Description
Author: Milton Ohring
Publisher: Academic Press
ISBN: 9780125249904
Category : Science
Languages : en
Pages : 744
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Book Description
Prepared as a textbook complete with problems after each chapter, specifically intended for classroom use in universities.
Author: Y. Pauleau
Publisher: Springer Science & Business Media
ISBN: 940100353X
Category : Technology & Engineering
Languages : en
Pages : 372
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Book Description
An up-to-date collection of tutorial papers on the latest advances in the deposition and growth of thin films for micro and nano technologies. The emphasis is on fundamental aspects, principles and applications of deposition techniques used for the fabrication of micro and nano devices. The deposition of thin films is described, emphasising the gas phase and surface chemistry and its effects on the growth rates and properties of films. Gas-phase phenomena, surface chemistry, growth mechanisms and the modelling of deposition processes are thoroughly described and discussed to provide a clear understanding of the growth of thin films and microstructures via thermally activated, laser induced, photon assisted, ion beam assisted, and plasma enhanced vapour deposition processes. A handbook for engineers and scientists and an introduction for students of microelectronics.
Author: Vijay Narayanan
Publisher: World Scientific
ISBN: 9814740497
Category : Technology & Engineering
Languages : en
Pages : 550
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Book Description
This volume provides a broad overview of the fundamental materials science of thin films that use silicon as an active substrate or passive template, with an emphasis on opportunities and challenges for practical applications in electronics and photonics. It covers three materials classes on silicon: Semiconductors such as undoped and doped Si and SiGe, SiC, GaN, and III-V arsenides and phosphides; dielectrics including silicon nitride and high-k, low-k, and electro-optically active oxides; and metals, in particular silicide alloys. The impact of film growth and integration on physical, electrical, and optical properties, and ultimately device performance, is highlighted.
Author: Bingwen Liang
Publisher:
ISBN:
Category :
Languages : en
Pages : 214
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Book Description
Author: Mohammed Habibullah Khan
Publisher:
ISBN:
Category : Germanium compounds
Languages : en
Pages : 298
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Book Description
Grows silicon germanium (SiGe) polycrystalline thin films by the pulsed laser deposition (PLD) method and studies the thin films for different temperature, background pressure, laser fluence, distance between substrate and target, and off axis substrate position. Studies the effect of operating parameters on growth rate and film quality to optimize growth parameters. Considers the non-stoichiometric transfer of SiGe, uniformity issues, particulate issues, and resistivities with respect to the operating variables of PLD.
