Author: Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 952
Book Description
Japanese Journal of Physics
Author: JJAP
Author: Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 800
Book Description
Japanese Journal of Applied Physics
Author: JJAP Letters
Author: Yoshio Nishina
Author: Dong-Won KimPublisher: CRC Press
ISBN: 1420012460
Category : Science
Languages : en
Pages : 216
Book Description
Yoshio Nishina not only made a great contribution to the emergence of a research network that produced two Nobel prize winners, but he also raised the overall level of physics in Japan. Focusing on his roles as researcher, teacher, and statesman of science, Yoshio Nishina: Father of Modern Physics in Japan analyzes Nishina's position in and his con
Japanese Journal of Physics
Author: Japanese Journals of Physics
Author: Nichigai AsoshiētsuPublisher:
ISBN:
Category : Physics
Languages : en
Pages : 0
Book Description
Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO
Author: Shunpei YamazakiPublisher: John Wiley & Sons
ISBN: 1119247454
Category : Technology & Engineering
Languages : en
Pages : 444
Book Description
This book highlights the display applications of c-axis aligned crystalline indium–gallium–zinc oxide (CAAC-IGZO), a new class of oxide material that challenges the dominance of silicon in the field of thin film semiconductor devices. It is an enabler for displays with high resolution and low power consumption, as well as high-productivity manufacturing. The applications of CAAC-IGZO focus on liquid crystal displays (LCDs) with extremely low power consumption for mobile applications, and high-resolution and flexible organic light-emitting diode (OLED) displays, and present a large number of prototypes developed at the Semiconductor Energy Laboratory. In particular, the description of LCDs includes how CAAC-IGZO enables LCDs with extremely low refresh rate that provides ultra-low power consumption in a wide range of use cases. Moreover, this book also offers the latest data of IGZO. The IGZO has recently achieved a mobility of 65.5 cm2ƒ}V-s, and it is expected to potentially exceed 100 cm2ƒ}V-s as high as that of LTPS. A further two books in the series will describe the fundamentals of CAAC-IGZO, and the application to LSI devices. Key features: • Introduces different oxide semiconductor field-effect transistor designs and their impact on the reliability and performance of LCDs and OLED displays, both in pixel and panel-integrated driving circuits. • Reviews fundamentals and presents device architectures for high-performance and flexible OLED displays, their circuit designs, and oxide semiconductors as an enabling technology. • Explains how oxide semiconductor thin-film transistors drastically can improve resolution and lower power consumption of LCDs.
Japanese Journals of Physics: Author
Author: Nichigai AsoshiētsuPublisher:
ISBN:
Category : Engineering
Languages : en
Pages : 380
Book Description
Author: 