Spectroscopy And Optoelectronics In Semiconductors And Related Materials - Proceedings Of The Sino-soviet Seminar PDF Download
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Author: Sue-chu Shen
Publisher: World Scientific
ISBN: 9814569682
Category :
Languages : en
Pages : 442
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Book Description
This proceedings volume covers new results from recent studies on impurity states, bound states in semiconductors, phonons, excitons and electron confinement in superlattices and quantum wells, magnetooptics, optical properties of solids in far infrared and millimeter wave regions, optical nonlinearity for III-V, II-VI compounds, Si, Ge, amorphous and organic semiconductors as well as optical crystals. Special emphasis is placed on the 2DEG system.
Author: Sue-chu Shen
Publisher: World Scientific
ISBN: 9814569682
Category :
Languages : en
Pages : 442
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Book Description
This proceedings volume covers new results from recent studies on impurity states, bound states in semiconductors, phonons, excitons and electron confinement in superlattices and quantum wells, magnetooptics, optical properties of solids in far infrared and millimeter wave regions, optical nonlinearity for III-V, II-VI compounds, Si, Ge, amorphous and organic semiconductors as well as optical crystals. Special emphasis is placed on the 2DEG system.
Author: M. Sahraoui-Tahar
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: John Sydney Blakemore
Publisher: Springer Science & Business Media
ISBN: 9780883185254
Category : Gallium arsenide
Languages : en
Pages : 422
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Book Description
Author: Bernard Pajot
Publisher: Springer Science & Business Media
ISBN: 3642180183
Category : Science
Languages : en
Pages : 532
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Book Description
This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.
Author: Victor I. Fistul
Publisher: CRC Press
ISBN: 0203299256
Category : Science
Languages : en
Pages : 448
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Book Description
Although there is a good deal of research concerning semiconductor impurities available, most publications on the subject are very specialized and very theoretical. Until now, the field lacked a text that described the current experimental data, applications, and theory concerning impurities in semiconductor physics. Impurities in Semicondu
Author: Gregory E. Stillman
Publisher:
ISBN:
Category :
Languages : en
Pages : 27
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Book Description
Low temperature photoluminescence spectroscopy has been applied to the study of high purity GaAs grown by liquid phase epitaxial, hydride vapor phase epitaxial, metalorganic chemical vapor deposition and molecular beam epitaxial growth techniques. This analytical technique has been used in combination with the analysis of variable temperature Hall effect data to quantitatively analyze the acceptor species present in high purity epitaxial GaAs. The incorporation of the amphoteric column IV elements has been studied for different growth conditions in each of the epitaxial growth techniques.
Author: Bun Lee
Publisher:
ISBN:
Category :
Languages : en
Pages : 316
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Book Description
The incorporation and amphoteric behavior of Group IV impurities in high purity gallium arsenide (GaAs) and indium phosphide (InP) grown by various growth techniques have been quantitatively studied by employing the characterization techniques, Hall-effect measurements, photothermal ionization spectroscopy (PTIS), and photoluminescence (PL). These quantitative analyses have been made on over 500 different GaAs samples provided from about 50 different laboratories and 50 different InP samples from 15 different laboratories as grown by the growth techniques of liquid phase epitaxy (LPE), vapor phase epitaxy (VPE), molecular beam epitaxy (MBE), and metalorganic chemical vapor deposition (MOCVD). With these quantitative analyses, the incorporation and amphoteric behavior of Group IV impurities have been correlated with the growth techniques and various independent growth parameters, particularly V/III ratios and substrate orientations. The spectroscopic analysis indicates that the relative ordering of central cell correction of shallow donor impurities in InP are identical to that of GaAs, but the amphoteric behavior of Si in LPE InP is opposite to that in LPE GaAs. Although Ge was always more amphoteric than Si, the values of amphoteric ratios of both Si and Ge in GaAs (100) layers were not noticeably changed with varying V/III ratios or other growth conditions for all of the growth techniques. The orientation dependent amphoteric behavior of Si, Ge, and C in MBE and AsCl$sb3$-MBE GaAs samples strongly suggests that the surface kinetic reactions during epitaxial growth play the dominant role in the amphoteric behavior. Obviously, the above results on the amphoteric behavior cannot be explained by the simple equilibrium thermodynamic consideration alone. The surface kinetic model has been developed to explain the amphoteric behavior of Group IV impurities in MBE and VPE GaAs. The major surface reactions for impurity incorporation involve adsorption, surface diffusion, dissociative chemisorption, and desorption, which are the rate limiting processes that can be different for different substrate orientation and different chemical impurity and/or source species used for the different growth techniques.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 28
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Author: Thomas Stanley Low
Publisher:
ISBN:
Category :
Languages : en
Pages : 536
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Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1420
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Book Description
