Ion-induced Grain Growth in Multilayer and Coevaporated Metal Alloy Thin Films PDF Download

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Languages : en
Pages : 10

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Book Description
Irradiation experiments were conducted on multilayer (ML) and coevaporated (CO) thin films in order to examine the role that the heat of mixing ([Delta]H{sub mix}) has in ion-induced grain growth. Room temperature irradiations using 1.7 MeV Xe were performed in the High Voltage Electron Microscope at Argonne National Laboratory. The alloys studied (Pt-Ti, Pt-V, Pt-Ni, Au-Co and Ni-Al) spanned a large range of [Delta]H{sub mix} values. Comparison of grain growth rates between ML and CO films of a given alloy confirmed a heat of mixing effect. Differences in grain growth rates between ML and CO films scaled according to the sign and magnitude of [Delta]H{sub mix} of the system (with exception of the Pt-V system). Substantial variations in growth rates among CO alloy films experiencing similar irradiation damage demonstrated that a purely collisional approach is inadequate for describing ion-induced grain growth and consideration must also be given to material-specific properties. Results from CO alloy films were consistent with a thermal spike model of ion-induced grain growth. The grain boundary mobility was observed to be proportional to the thermal spike-related parameter, (F{sub D}2)/([Delta]H{sub coh}3), where F{sub D} is the deposited damage energy and [Delta]H{sub coh} is the cohesive energy.