Scientific and Technical Aerospace Reports

Scientific and Technical Aerospace Reports PDF Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1102

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Scientific and Technical Aerospace Reports

Scientific and Technical Aerospace Reports PDF Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1102

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INIS Atomindex

INIS Atomindex PDF Author:
Publisher:
ISBN:
Category : Nuclear energy
Languages : en
Pages : 988

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Silicon Carbide '87

Silicon Carbide '87 PDF Author: James D. Cawley
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 534

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Scientific and Technical Aerospace Reports

Scientific and Technical Aerospace Reports PDF Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1148

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Silicon Carbide

Silicon Carbide PDF Author: Wolfgang J. Choyke
Publisher: Springer Science & Business Media
ISBN: 3642188702
Category : Technology & Engineering
Languages : en
Pages : 911

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Book Description
Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.

Fundamentals of Silicon Carbide Technology

Fundamentals of Silicon Carbide Technology PDF Author: Tsunenobu Kimoto
Publisher: John Wiley & Sons
ISBN: 1118313526
Category : Technology & Engineering
Languages : en
Pages : 565

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A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

C,H,N and O in Si and Characterization and Simulation of Materials and Processes

C,H,N and O in Si and Characterization and Simulation of Materials and Processes PDF Author: A. Borghesi
Publisher: North Holland
ISBN:
Category : Science
Languages : en
Pages : 624

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Book Description
Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry.The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.

Physics Briefs

Physics Briefs PDF Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 820

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International Aerospace Abstracts

International Aerospace Abstracts PDF Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1020

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Ceramic Abstracts

Ceramic Abstracts PDF Author:
Publisher:
ISBN:
Category : Ceramics
Languages : en
Pages : 250

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