Ion Implantation And Ion Beam Equipmen - Proceedings Of The International Conference PDF Download
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Author: Karpuzov D S
Publisher: #N/A
ISBN: 9814556572
Category :
Languages : en
Pages : 604
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Book Description
Author: Karpuzov D S
Publisher: #N/A
ISBN: 9814556572
Category :
Languages : en
Pages : 604
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Book Description
Author: H. Ryssel
Publisher: Springer Science & Business Media
ISBN: 3642691560
Category : Science
Languages : en
Pages : 564
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Book Description
The Fourth International Conference on Ion Implantation: Equipment and Tech niques was held at the Convention Center in Berchtesgaden, Bavaria, Germany, from September 13 to 17, 1982. It was attended by more than 200 participants from over 20 different countries. Severa1 series of conferences have dealt with the app1ication of ion implantation to semiconductors and other materials (Thousand Oaks, 1970; Garmisch-Partenkirchen, 1971; Osaka, 1974; Warwick, 1975; Bou1der, 1975; Budapest, 1978; and Albany, 1980). Another series of conferences has been devoted to implantation equipment and techniques (S- ford, 1977; Trento, 1978; and Kingston, 1980). This conference was the fourth in the 1atter series. Twe1ve invited papers and 55 contributed papers covered the areas of ion implantation equipment, measuring techniques, and app1ica tions of implantation to metals and semiconductors. A schoo1 on ion implantation was held in connection with the conference, and the 1ectures presented at this schoo1 were pub1ished as Vo1. 10 of the Springer Series in E1ectrophysics under the tit1e Ion Implantation Techniques (edited by H. Rysse1 and H. G1awischnig). During the conference, space was also provided for presentations and demonstrations by manufacturers of ion implantation equipment. Once again, this conference provided a forum for free discussion among implantation specia1ists in industry as we11 as research institutions. Espe cially effective in stimulating a free exchange of information was the daily get-together over free beer at the "Bier Adam". Many people contributed to the success of this conference.
Author: Isao Yamada
Publisher: CRC Press
ISBN: 1498711766
Category : Science
Languages : en
Pages : 260
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Book Description
Materials Processing by Cluster Ion Beams: History, Technology, and Applications discusses the contemporary physics, materials science, surface engineering issues, and nanotechnology capabilities of cluster beam processing. Written by the originator of the gas cluster ion beam (GCIB) concept, this book:Offers an overview of ion beam technologies, f
Author:
Publisher:
ISBN:
Category : Electron beams
Languages : en
Pages : 1048
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Book Description
Author: Bernd Schmidt
Publisher: Springer Science & Business Media
ISBN: 3211993568
Category : Technology & Engineering
Languages : en
Pages : 425
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Book Description
A comprehensive review of ion beam application in modern materials research is provided, including the basics of ion beam physics and technology. The physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning is treated in detail. Its applications in materials research, development and analysis, developments of special techniques and interaction mechanisms of ion beams with solid state matter result in the optimization of new material properties, which are discussed thoroughly. Solid-state properties optimization for functional materials such as doped semiconductors and metal layers for nano-electronics, metal alloys, and nano-patterned surfaces is demonstrated. The ion beam is an important tool for both materials processing and analysis. Researchers engaged in solid-state physics and materials research, engineers and technologists in the field of modern functional materials will welcome this text.
Author: Emile Knystautas
Publisher: CRC Press
ISBN: 1420028294
Category : Technology & Engineering
Languages : en
Pages : 592
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Book Description
While ion-beam techniques have been used to create thin films in the semiconductor industry for several decades, these methods have been too costly for other surface treatment applications. However, as manufacturing devices become increasingly smaller, the use of a directed-energy ion beam is finding novel industrial applications that require the custom tailoring of new materials and devices, including magnetic storage devices, photonics, opto-electronics, and molecular transport. Engineering Thin Films and Nanostructures with Ion Beams offers a thorough narrative of the recent advances that make this technology relevant to current and future applications. Featuring internationally recognized researchers, the book compiles their expertise in a multidimensional source that: Highlights the mechanisms and visual evidence of the effects of single-ion impacts on metallic surfaces Considers how ion-beam techniques can help achieve higher disk-drive densities Introduces gas-cluster ion-beam technology and reviews its precedents Explains how ion beams are used to aggregate metals and semiconductors into nanoclusters with nonlinear optical properties Addresses current challenges in building equipment needed to produce nanostructures in an industrial setting Examines the combination of ion-beam techniques, particularly with physical vapor deposition Delineates the fabrication of nanopillars, nanoflowers, and interconnected nanochannels in three dimensions by using atomic shadowing techniques Illustrates the production of nanopores of varying dimensions in polymer films, alloys, and superconductors using ion-beam irradiation Shows how fingerprints can be made more reliable as forensic evidence by recoil-mixing them into the substrate using ion beams From the basics of the ion-beam modification of materials to state-of-the-art applications, Engineering Th
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1212
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Book Description
Author: Yoshio Nishi
Publisher: CRC Press
ISBN: 1420017667
Category : Technology & Engineering
Languages : en
Pages : 1720
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Book Description
Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.
Author: SYMPOSIUM ON SILICON PROCESSING. (1982 : SAN JOSE) AUTOR
Publisher: ASTM International
ISBN:
Category :
Languages : en
Pages : 562
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Book Description
Author: W.H. Bloss
Publisher: Springer Science & Business Media
ISBN: 9400978987
Category : Technology & Engineering
Languages : en
Pages : 1126
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Book Description
This paper is written in the belief that people are important and that equipment is to serve the needs of the people and therefore should be designed to meet their specific needs and environment. This is particularly important in the case of a developing country when a professional engineer accepts the responsibility to formulate policies evaluate equipment imple ment projects and train national people. 1. Government, geography and climate Papua New Guinea, an independent and self governing state since 1975, is located directly North of Australia above the North Eastern State of Queensland. The country extends from 141° east longitude, at the border with Indonesia (Irian Jaya) to 160° east longitude and between latitudes 1° and 12° south (see figure 1). Papua New Guinea is a parliamentary democracy, with a single legis lature known as the National Parliament (1). The State is divided into 19 provinces plus the National Capital District (Port Moresby) with de centralized Government established in each province. Before independence the country comprised the Australian territory of Papua in the southern regions and the United Nations Trust Territory of New Guinea in the North (1). Land area is 462,840 square kilometres This inclUdes the mainland, the three large islands of New Britain, ~ew Ireland and fiougainville plus 600 small islands and archipelagos. Approximate direct distances from the capital city of Port Moresby to some of the other centres are : Vanimo 990 km, Rabaul SOO km, Arawa 990 km and Lorengau S25 km.
