Investigation of Tungsten-doped Indium Oxide Thin-film Fabricated by RF Co-sputtering System and Their Optoelectronics Applications PDF Download
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Author: 吳柏儒
Publisher:
ISBN:
Category :
Languages : en
Pages : 171
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Author: 吳柏儒
Publisher:
ISBN:
Category :
Languages : en
Pages : 171
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Author: 陳冠吟
Publisher:
ISBN:
Category :
Languages : en
Pages : 98
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Author: 陳維德
Publisher:
ISBN:
Category :
Languages : en
Pages : 120
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Author: 李家緯
Publisher:
ISBN:
Category :
Languages : en
Pages : 77
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Author: W.R. Fahrner
Publisher: Trans Tech Publications Ltd
ISBN: 3038131024
Category : Technology & Engineering
Languages : en
Pages : 208
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Book Description
The world of today must face up to two contradictory energy problems: on the one hand, there is the sharply growing consumer demand in countries such as China and India. On the other hand, natural resources are dwindling. Moreover, many of those countries which still possess substantial gas and oil supplies are politically unstable. As a result, renewable natural energy sources have received great attention. Among these, solar-cell technology is one of the most promising candidates. However, there still remains the problem of the manufacturing costs of such cells. Many attempts have been made to reduce the production costs of conventional solar cells (manufactured from monocrystalline silicon using diffusion methods) by instead using cheaper grades of silicon, and simpler pn-junction fabrication. That is the hero of this book; the heterojunction solar cell.
Author: M. C. Rao
Publisher: LAP Lambert Academic Publishing
ISBN: 9783845429892
Category :
Languages : en
Pages : 108
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The energy conversion, storage and distribution are the important concerns of our civilization in order to meet the challenges of global warming and finite nature of the fossil fuels. In response to the needs of the modern society and emerging technological advancements, it is now essential that new, low cost and environment friendly energy conversion and storage systems are to be developed. As the general tendency of all advanced technologies is towards miniaturization, it is evident that the future development of batteries is aimed at smaller dimensions with higher-energy densities. The development of solid-state batteries parallels the development of semiconductor electronics. Systematic and detailed investigations were made on the growth and characterization of tungsten oxide thin films considering the importance of these films in the fabrication of all solid state microbattery application.
Author: Dr. B. Radhakrishna
Publisher: Lulu.com
ISBN: 0359510280
Category : Education
Languages : en
Pages : 132
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Badeker in 1907 observed that some materials are optically transparent in the visible light and electrically conducting [1]. Because of the increasing interest in electrically and electronically active materials, the search for materials and the techniques for producing semi-transparent electrically conducting films have gained much importance. In an intrinsic stoichiometric material, it is not possible to have simultaneously high transparency (>80%%) in the visible region and high electrical conductivity (>103 Ω cm-1). A variety of metals in thin film form (
Author:
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Category :
Languages : en
Pages :
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The electronic, optical and luminescent properties of europium doped wide band gap oxide thin films and the electronic properties of indium gallium zinc oxide (IGZO), a novel amorphous oxide semiconductor were investigated. The thin films of europium doped gallium and gadolinium oxides and indium gallium zinc oxide were deposited on c-axis oriented sapphire substrates by Pulsed Laser Deposition at various conditions of temperature, pressure and doping concentration. Europium doped gallium oxide was found to be in beta phase with monoclinic crystal structure and the films exhibited intense red emission under cathode ray excitation with a peak wavelength of emission at 611 nm which corresponds to the transitions from 5D0 to 7F2 levels in europium. Europium doped gadolinium oxide thin films were found to exhibit two different phases (cubic and monoclinic) with the one of the phases being dominant depending on the growth conditions. The peak wavelength of emission was either 611 nm or 613 nm depending on the phase of the films. The amorphous indium gallium zinc oxide thin films were found to exhibit very high hall mobilities of the order of ̃15 cm2∙V−1∙s−1 and the conductivity could be controlled over several orders of magnitude from 5 x 10−3 S∙cm−1 to 10 S∙cm−1 in the amorphous phase. Annealing the films in presence of air was found to decrease the carrier concentration of the films due the incorporation of oxygen in the films thereby filling up the oxygen vacancies. Applications of amorphous indium gallium zinc oxide include Transparent Thin Film Transistors and use as transparent conducting oxide for optoelectronic devices.
Author: American Ceramic Society
Publisher:
ISBN:
Category : Ceramics
Languages : en
Pages : 1150
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Author: Eliot K. Broadbent
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 450
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
