Influence of the Interface Quality on the Structural and Optical Properties of InAs/GaSb/AlSb Heterostructures Grown by Molecular Beam Epitaxy

Influence of the Interface Quality on the Structural and Optical Properties of InAs/GaSb/AlSb Heterostructures Grown by Molecular Beam Epitaxy PDF Author: Edward Morton Shaw
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Category :
Languages : en
Pages : 104

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Ceramic Abstracts

Ceramic Abstracts PDF Author:
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Category : Ceramics
Languages : en
Pages : 1040

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Physics Briefs

Physics Briefs PDF Author:
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Category : Physics
Languages : en
Pages : 1058

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Chemical Abstracts

Chemical Abstracts PDF Author:
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Category : Chemistry
Languages : en
Pages : 2668

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Electrical & Electronics Abstracts

Electrical & Electronics Abstracts PDF Author:
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Category : Electrical engineering
Languages : en
Pages : 1904

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The Engineering Index Annual

The Engineering Index Annual PDF Author:
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Category : Engineering
Languages : en
Pages : 2264

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Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.

Silicon Molecular Beam Epitaxy

Silicon Molecular Beam Epitaxy PDF Author: E. Kasper
Publisher: CRC Press
ISBN: 1351085077
Category : Technology & Engineering
Languages : en
Pages : 306

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This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

International Aerospace Abstracts

International Aerospace Abstracts PDF Author:
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Category : Aeronautics
Languages : en
Pages : 488

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Referativnyĭ zhurnal

Referativnyĭ zhurnal PDF Author:
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Category : Physics
Languages : en
Pages : 600

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Metals Abstracts Index

Metals Abstracts Index PDF Author:
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Category : Metallurgy
Languages : en
Pages : 894

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