Influence of Operating Conditions on Radiation Damage to Transistor Gain PDF Download
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Author: H. L. Chambers
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 26
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Book Description
Gain degradation rates were obtained for various transistor operating conditions of current and voltage during Cobalt 60 irradiation and compared with the degradation rate for a radiation exposure in the passive state. The effects of emitter current alone, collector voltage alone, and normal transistor operating modes were studied. The results showed that increasing levels of carrier injection from the emitter caused decreasing rates of damage. For a 2N1613 type silicon transistor, the maximum reduction observed was approximately a factor of 2. This behavior is believed to be due to an alteration of the charge state of the radiation induced defect at the time the defect is formed. A lesser dependency with collector voltage was also observed. The effects of temperature in the range 105 F to 140 F, during gamma irradiation, were found to be small in comparison with the effects of active-passive current variations. Tests conducted in a neutron environment, where normal transistor operating modes were compared with the passive irradiation state, indicated very little influence upon damage rate.
Author: H. L. Chambers
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 26
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Book Description
Gain degradation rates were obtained for various transistor operating conditions of current and voltage during Cobalt 60 irradiation and compared with the degradation rate for a radiation exposure in the passive state. The effects of emitter current alone, collector voltage alone, and normal transistor operating modes were studied. The results showed that increasing levels of carrier injection from the emitter caused decreasing rates of damage. For a 2N1613 type silicon transistor, the maximum reduction observed was approximately a factor of 2. This behavior is believed to be due to an alteration of the charge state of the radiation induced defect at the time the defect is formed. A lesser dependency with collector voltage was also observed. The effects of temperature in the range 105 F to 140 F, during gamma irradiation, were found to be small in comparison with the effects of active-passive current variations. Tests conducted in a neutron environment, where normal transistor operating modes were compared with the passive irradiation state, indicated very little influence upon damage rate.
Author:
Publisher: ASTM International
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 248
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Author: D. L. Nelson
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 28
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Book Description
Transistor gain is reduced by ioizing radiation, which affects the transistor surface, and by displacement radiation, which causes lattice defects. The investigation of ionizing radiation damage described in this paper was accomplished with X-rays of photon energy less than 150 kev, which is below the energy necessary for displacement damage in silicon. Experiments were performed on silicon dioxide passivated silicon planar transistors with open leads, in a normal amplifying mode and with other junction bias conditions. AC and DC gain measurements at various injection levels showed a gain degradation dependence on the operating bias conditions. Open leads and back-biasing of each junction during irradiation resulted in considerable damage, with almost complete recovery occurring in most transistors tested when the base emitter junction was forward-biased. Many of the characteristics of the radiation damage observed can be explained by Atalla's model that charge collection at the surface causes a widening of the space charge region, thus increasing the recombination-generation current.
Author:
Publisher:
ISBN:
Category : Nuclear energy
Languages : en
Pages : 1058
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Author:
Publisher:
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 256
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Author: Clarence F. RAMSTEDT
Publisher:
ISBN:
Category :
Languages : en
Pages : 176
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Tests were performed to determine the influence of junction temperature on radiation-induced surface effects in transistors. Sets of the germanium transistor types 2N526, 2N501A, 2N43A and 2N599 and the silicon transistor type 2N329A were irradiated to an exposure of 13,100 r in controlled ambient temperatures of 0, 25, and 50C while individual I sub CBO (collector leakage current), Beta (common emitter current gain) and h sub ie (common emitter input impedance) levels were measured. The responses, predominantly upward, were shown to be significantly dependent on junction temperature. The radiation-induced changes in I sub CBO (delta I sub CBO) increased with temperature in all units up to a point, above which, in three Ge types, they decreased. Induced changes in gain (delta beta) showed no consistent temperature influence; but, analysis of the common base gain, alpha, showed changes (delta alpha) which decreased consistently with temperature in the Ge transistors and over a portion of the temperature range in the Si transistor. The responses of h sub ie generally followed those of beta. Thermal annealling of radiation effects appears responsible for the diminishing of delta alpha and delta I sub CBO with temperature. Post-irradiation recovery rates of delta I sub CBO increased with temperature and correlated with the delta I sub CBO vs temperature relations. No correlation could be established between the delta or delta beta vs temperature relation and the post-irradiation recovery rate of current gain. (Author).
Author: George Messenger
Publisher: Springer
ISBN:
Category : Juvenile Nonfiction
Languages : en
Pages : 984
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Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 738
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Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 186
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Book Description
Author: V. S. Vavilov
Publisher: Springer Science & Business Media
ISBN: 1468490699
Category : Science
Languages : en
Pages : 280
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Book Description
