Impurity Doping Processes in Silicon PDF Download
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Author: F.F.Y. Wang
Publisher: Elsevier
ISBN: 008098357X
Category : Technology & Engineering
Languages : en
Pages : 652
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Book Description
This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.
Author: F.F.Y. Wang
Publisher: Elsevier
ISBN: 008098357X
Category : Technology & Engineering
Languages : en
Pages : 652
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Book Description
This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.
Author: Oleg Velichko
Publisher: World Scientific
ISBN: 1786347172
Category : Technology & Engineering
Languages : en
Pages : 404
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Book Description
This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
Author: L.S. Miller
Publisher: Springer Science & Business Media
ISBN: 1461538181
Category : Technology & Engineering
Languages : en
Pages : 549
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Book Description
Electronic materials are a dominant factor in many areas of modern technology. The need to understand'them is paramount; this book addresses that need. The main aim of this volume is to provide a broad unified view of electronic materials, including key aspects of their science and technology and also, in many cases, their commercial implications. It was considered important that much of the contents of such an overview should be intelligible by a broad audience of graduates and industrial scientists, and relevant to advanced undergraduate studies. It should also be up to date and even looking forward to the future. Although more extensive, and written specifically as a text, the resulting book has much in common with a short course of the same name given at Coventry Polytechnic. The interpretation of the term "electronic materials" used in this volume is a very broad one, in line with the initial aim. The principal restriction is that, with one or two minor exceptions relating to aspects of device processing, for example, the materials dealt with are all active materials. Materials such as simple insulators or simple conductors, playing only a passive role, are not singled out for consider ation. Active materials might be defined as those involved in the processing of signals in a way that depends crucially on some specific property of those materials, and the immediate question then concerns the types of signals that might be considered.
Author: Andreas Öchsner
Publisher: Trans Tech Publications Ltd
ISBN: 3038130885
Category : Technology & Engineering
Languages : en
Pages : 624
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Book Description
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Author: S. Selberherr
Publisher: Springer Science & Business Media
ISBN: 3709187524
Category : Technology & Engineering
Languages : en
Pages : 308
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Book Description
The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
Author: Robert A. Wesolowski
Publisher: Springer Nature
ISBN: 3030178471
Category : Technology & Engineering
Languages : en
Pages : 242
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Book Description
The world of materials is exciting because new materials are evolving daily. After an introduction to materials science, the book addresses the classification and structure of matter. It moves on to discuss crystal and mechanical properties. Next, the book employs various materials such as semiconductors and iron wires to teach concepts such as electrical conductivity, heat conductivity and allotropes. Corrosion is addressed and a chapter dedicated to interpretation of graphs and diagrams in materials science is presented. The book then progresses with chapters on ceramics, biomaterials, polymers and composites. To address the growing importance of recycling materials, polymer identification codes are explained. Interesting topics such as accidental materials discovery and materials failure are included. Each chapter ends with a chapter summary and questions and answers. Illustrations and worked examples are provided throughout. A lab manual is included as well. Presents an broad overview of materials science topics, including such topics as: crystal and mechanical properties of materials, semiconductors and iron wires, corrosion, ceramics, biomaterials, polymers, and composite materials; Examines modern-day materials, their synthesis, properties, alteration, and applications; Includes supplemental material, such as a lab manual and examples.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 7
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Book Description
We report on a solid-source method to introduce dopants or controlled impurities directly into the melt zone during float-zone growth of single- or multicrystalline ingots. Unlike the Czochralski (CZ) growth situation, float-zoning allows control over the levels of some impurities (O, C) that cannot be avoided in CZ growth or ingot casting. But aside from impurity studies, the method turns out to be very practical for routine p-type doping in semicontinuous growth processes such as float-zoning, electromagnetic casting, or melt-replenished ribbon growth. Equations governing dopant incorporation, dopant withdrawal, and N co-doping are presented and experimentally verified. Doping uniformity and doping initiation and withdrawal time constants are also reported. The method uses nontoxic source materials and is flexible with quick turnaround times for changing doping levels. Boron p-type doping with nitrogen co-doping is particularly attractive for silicon lattice strengthening against process-induced dislocation motion and also allows greater freedom from incorporation of Si self-interstitial cluster or A and B swirl-type defects and"D"--Type microdefects than nitrogen-free p-type material.
Author: Narain Arora
Publisher: World Scientific
ISBN: 9814365491
Category : Technology & Engineering
Languages : en
Pages : 633
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Book Description
A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Author: Narain D. Arora
Publisher: Springer Science & Business Media
ISBN: 3709192471
Category : Computers
Languages : en
Pages : 628
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Book Description
Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
Author: Angus Rockett
Publisher: Springer Science & Business Media
ISBN: 0387686509
Category : Technology & Engineering
Languages : en
Pages : 629
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Book Description
This book describes semiconductors from a materials science perspective rather than from condensed matter physics or electrical engineering viewpoints. It includes discussion of current approaches to organic materials for electronic devices. It further describes the fundamental aspects of thin film nucleation and growth, and the most common physical and chemical vapor deposition techniques. Examples of the application of the concepts in each chapter to specific problems or situations are included, along with recommended readings and homework problems.
